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NTIS 바로가기VLSI Technology, 2017 Symposium on, 2017 June, 2017년, pp.T230 - T231
Loubet, N. (IBM, IBM Research, 257 Fuller Road, Albany, NY 12203) , Hook, T. (IBM, IBM Research, 257 Fuller Road, Albany, NY 12203) , Montanini, P. (IBM, IBM Research, 257 Fuller Road, Albany, NY 12203) , Yeung, C.-W. (IBM, IBM Research, 257 Fuller Road, Albany, NY 12203) , Kanakasabapathy, S. (IBM, IBM Research, 257 Fuller Road, Albany, NY 12203) , Guillom, M. (IBM, IBM Research, 257 Fuller Road, Albany, NY 12203) , Yamashita, T. (IBM, IBM Research, 257 Fuller Road, Albany, NY 12203) , Zhang, J. (IBM, IBM Research, 257 Fuller Road, Albany, NY 12203) , Miao, X. (IBM, IBM Research, 257 Fuller Road, Albany, NY 12203) , Wang, J. (IBM, IBM Research, 257 Fuller Road, Albany, NY 12203) , Young, A. (IBM, IBM Research, 257 Fuller Road, Albany, NY 12203) , Chao, R. (IBM, IBM Research, 257 Fuller Road, Albany, NY 12203) , Kang, M. (Samsung Electronics, IBM Research, 257 Fuller Road, Albany, NY 12203) , Liu, Z. (IBM, IBM Research, 257 Fuller Road, Albany, NY 12203) , Fan, S. (IBM, IBM Research, 257 Fuller Road, Albany, NY 12203) , Hamieh, B. (IBM, IBM Research, 257 Fuller Road, Albany, NY 12203) , Sieg, S. (IBM, IBM Research, 257 Fuller Road, Albany, NY 12203) , Mignot, Y. (IBM, IBM Research, 257 Fuller Road, Albany, NY 12) , Xu, W. , Seo, S.-C. , Yoo, J. , Mochizuki, S. , Sankarapandian, M. , Kwon, O. , Carr, A. , Greene, A. , Park, Y. , Frougier, J. , Galatage, R. , Bao, R. , Shearer, J. , Conti, R. , Song, H. , Lee, D. , Kong, D. , Xu, Y. , Arceo, A. , Bi, Z. , Xu, P. , Muthinti, R. , Li, J. , Wong, R. , Brown, D. , Oldiges, P. , Robison, R. , Arnold, J. , Felix, N. , Skordas, S. , Gaudiello, J. , Standaert, T. , Jagannathan, H. , Corliss, D. , Na, M.-H. , Knorr, A. , Wu, T. , Gupta, D. , Lian, S. , Divakaruni, R. , Gow, T. , Labelle, C. , Lee, S. , Paruchuri, V. , Bu, H. , Khare, M.
In this paper, for the first time we demonstrate that horizontally stacked gate-all-around (GAA) Nanosheet structure is a good candidate for the replacement of FinFET at the 5nm technology node and beyond. It offers increased Weff per active footprint and better performance compared to FinFET, and w...
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