Method for forming PE-TEOS layer of semiconductor integrated circuit device
원문보기
IPC분류정보
국가/구분
United States(US) Patent
공개
국제특허분류(IPC7판)
H01L-021/31
H01L-021/469
출원번호
US-0693457
(2003-10-27)
공개번호
US-0106302
(2004-06-03)
우선권정보
KR-0076350 (2002-12-03)
발명자
/ 주소
Jang, Bong-Jun
대리인 / 주소
VOLENTINE FRANCOS, P.L.L.C.
인용정보
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초록▼
A method of forming a PE-TEOS layer of a semiconductor IC device provides uniformly thick PE-TEOS layers on a batch of wafers. First, a loading wafer cassette is prepared to provide the wafers to be processed. Next, a process atmosphere is pre-created in a processing chamber. Then the wafers are sup
A method of forming a PE-TEOS layer of a semiconductor IC device provides uniformly thick PE-TEOS layers on a batch of wafers. First, a loading wafer cassette is prepared to provide the wafers to be processed. Next, a process atmosphere is pre-created in a processing chamber. Then the wafers are supplied in sequence into the chamber from the loading wafer cassette and the wafers are mounted on a heater table in the chamber. Next, the PE-TEOS layer is deposited on the wafers by spraying a process gas into the chamber through showerheads. Next, the wafers are discharged from the chamber. Once the chamber is cleared of wafers, the inside of the chamber is cleaned by supplying a cleaning gas into the chamber, and exciting the cleaning gas with RF power. Subsequently, more TEOS gas is supplied into the chamber through the showerheads without being excited by RF power to especially reduce the temperature of the showerheads and that prevailing inside the chamber. In particular, the temperature within the chamber is brought back down to the process temperature.
대표청구항▼
1. A method of forming a PE-TEOS layer of a semiconductor integrated circuit device, said method comprising:providing a plurality of wafers to be batch-processed using a loading wafer cassette containing the wafers; pre-creating a process atmosphere in a chamber, the atmosphere being the same as one
1. A method of forming a PE-TEOS layer of a semiconductor integrated circuit device, said method comprising:providing a plurality of wafers to be batch-processed using a loading wafer cassette containing the wafers; pre-creating a process atmosphere in a chamber, the atmosphere being the same as one in which PE-TEOS will be formed on the wafers; subsequently supplying the plurality of wafers in sequence from the loading wafer cassette and onto a table comprising a heater in the chamber; forming a PE-TEOS layer on the plurality of wafers, said forming comprising spraying a process gas, including TEOS, into the chamber through showerheads and onto the wafers disposed on the heating table, and exciting the process gas using RF power; discharging the plurality of wafers from the chamber; cleaning the inside of the chamber once all of the wafers in the chamber have been discharged from the chamber; and after the chamber has been cleaned, and before any more wafers are loaded into the chamber, supplying TEOS gas into the chamber through the showerheads without exciting the TEOS gas with RF power so as to reduce the temperature of the showerheads and that prevailing inside the chamber. 2. The method of claim 1, wherein the pre-creating of the process atmosphere includes heating the table to a temperature of about 350° C., spraying TEOS gas through the showerheads, and forming plasma in the chamber by exciting the process gas using RF power of about 300W to 700W while the process gas is at a pressure of about 2 Torr. 3. The method of claim 2, wherein the cle aning of the inside of the chamber is performed by supplying oxygen gas and CFgas together into the chamber, and exciting the oxygen gas and CFgas with the RF power while at a pressure of about 3 Torr and a temperature of about 390° C. 4. The method of claim 1, wherein the supplying of the TEOS gas is performed by spraying about 1 &mgr;l to 20 kl of the TEOS gas into the chamber for one second to two hours, and maintaining the pressure of the TEOS gas once it is in the chamber at about 20 Torr or less. 5. The method of claim 4, wherein the supplying of the TEOS gas is performed by spraying the TEOS gas at a flow rate of about 2.1 ml/min for about 250 seconds, and maintaining the pressure of the TEOS gas once it is in the chamber at about 2 Torr. 6. A plasma-enhanced method of processing each of a plurality of substrates, said method comprising:pre-creating a process atmosphere in a processing chamber of a plasma processing apparatus, the atmosphere being the same as one in which the substrates will be processed; subsequently supplying the substrates in sequence into the chamber; processing a batch of the substrates, said processing comprising spraying a process gas into the chamber and towards substrates disposed in the chamber, and exciting the process gas using RF power to convert the process gas into plasma, whereby the plasma is deposited on the substrates and a portion of the plasma processing apparatus within said chamber; discharging the batch of substrates from the chamber; cleaning the inside of the chamber once all of the wafers in the chamb er have been unloaded from the chamber to remove deposits from said portion of the plasma processing apparatus, said cleaning comprising heating the chamber; and after the chamber has been cleaned, and before any more substrates are loaded into the chamber, supplying a gas into the chamber without exciting the gas with RF power so as to reduce the temperature prevailing inside the chamber. 7. The method of claim 6, wherein said spraying a process gas into the chamber and onto the substrates disposed in the chamber comprises spraying the process gas through a shower head, and said supplying a gas into the chamber comprises spraying gas into the chamber through said showerhead. 8. The method of claim 6, wherein the process gas comprises TEOS gas. 9. The method of claim 8, wherein the gas supplied into the process chamber is also TEOS gas. 10. The method of claim 6, wherein the cleaning of the inside of the chamber is performed by supplying a cleaning gas into the chamber, and exciting the cleaning gas using RF power to convert the cleaning gas to plasma. 11. The method of claim 10, wherein the cleaning gas comprises oxygen gas and CFgas. 12. The method of claim 8, wherein the cleaning of the inside of the chamber is performed by supplying a cleaning gas into the chamber, and exciting the cleaning gas using RF power to convert the cleaning gas to plasma. 13. The method of claim 10, wherein the cleaning gas comprises oxygen gas and CFgas. 14. The method of claim 6, and further comprising subsequently processing another batch of substrates in the chamber.
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