초록 ▼

An improvement in the properties of etch rate, mechanical stress, and chemical resistance of silicon layers obtained by plasma-enhanced chemical vapor deposition from mixtures of reactive gases such as oxygen and tetraethoxysilane is achieved by adding nitrogen gas to the reactive gas mixture. The a

An improvement in the properties of etch rate, mechanical stress, and chemical resistance of silicon layers obtained by plasma-enhanced chemical vapor deposition from mixtures of reactive gases such as oxygen and tetraethoxysilane is achieved by adding nitrogen gas to the reactive gas mixture. The addition of nitrogen gas is effective in improving the cited properties of the silicon oxide layers without altering the basic properties of the deposition process or degrading the other desirable properties of the silicon oxide layers in any substantial manner.

대표청구항 ▼

[ What is claimed is:] [1.] A method of depositing a dielectric layer on a semiconductor substrate in a plasma reactor, comprising:providing a mixture of oxygen (O2) gas and tetraethoxysilane vapor;adding nitrogen gas to said mixture; andestablishing a plasma in said plasma reactor to complete the d

[ What is claimed is:] [1.] A method of depositing a dielectric layer on a semiconductor substrate in a plasma reactor, comprising:providing a mixture of oxygen (O2) gas and tetraethoxysilane vapor;adding nitrogen gas to said mixture; andestablishing a plasma in said plasma reactor to complete the deposition of said dielectric layer, wherein nitrogen is mechanically incorporated but not chemically bound into said dielectric layer during deposition of said dielectric layer.