IPC분류정보
국가/구분 |
United States(US) Patent
공개
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0642083
(2003-08-14)
|
공개번호 |
US-0112539
(2004-06-17)
|
발명자
/ 주소 |
- Larson, Dean J.
- Kadkhodayan, Babak J.
- Wu, Di J.
- Takeshita, Kenji J.
- Yen, Bi-Ming J.
- Su, Xingcai J.
- Denty, William M. JR.
- Loewenhardt, Peter M. JR.
|
출원인 / 주소 |
|
대리인 / 주소 |
BEYER WEAVER & THOMAS LLP
|
인용정보 |
피인용 횟수 :
0 인용 특허 :
0 |
초록
▼
Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inn
Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.
대표청구항
▼
1. A method, for etching a layer over a substrate, comprising:placing the substrate in a plasma processing chamber; providing a first gas to an inner zone within the plasma processing chamber; providing a second gas to the outer zone of the plasma processing chamber, wherein the outer zone surrounds
1. A method, for etching a layer over a substrate, comprising:placing the substrate in a plasma processing chamber; providing a first gas to an inner zone within the plasma processing chamber; providing a second gas to the outer zone of the plasma processing chamber, wherein the outer zone surrounds the inner zone and the first gas is different than the second gas; simultaneously generating plasmas from the first gas and second gas; etching the layer, wherein the layer is etched by the plasmas from the first gas and second gas. 2. The method, as recited in claim 1, wherein the first gas is different than the second gas in that the first gas has a first ratio of gases and the second gas has a second ratio of gases, wherein the first ratio is different than the second ratio. 3. The method, as recited in claim 1, wherein the first gas is different than the second gas, in that the first gas and the second gas are made of different component gases. 4. The method, as recited in claim 3, further comprising tuning the second gas to the first gas to provide a more uniform etch. 5. The method, as recited in claim 1, wherein the tuning the second gas to the first gas provides a more uniform critical dimensions, a more uniform taper, a more uniform selectivity, and a more uniform profile. 6. The method, as recited in claim 1, wherein the first gas comprises a first component gas and a second component gas with a first component gas to second component gas ratio, and wherein the first component gas has a lower molecular weight than the second gas component, and wherein the second gas comprises the first component gas and the second component gas, wherein a ratio of the first component gas to the second component gas for the second gas is greater than the ratio of the first component gas to the second component gas for the first gas. 7. The method, as recited in claim 6, wherein the plasma processing chamber comprises a gas distribution system with an inner zone gas distribution system and an outer zone gas distribution system, wherein the outer zone gas distribution system surrounds the inner zone gas distribution system. 8. The method, as recited in claim 7, wherein the first gas is different than the second gas, in that the first gas and the second gas are made of different component gases. 9. The method, as recited in claim 8, further comprising tuning the second gas to the first gas to provide a more uniform etch. 10. The method, as recited in claim 7, wherein the tuning the second gas to the first gas provides a more uniform critical dimensions, a more uniform taper, a more uniform selectivity, and a more uniform profile. 11. The method, as recited in claim 1, wherein the outer zone is adjacent to an edge of the wafer and the inner zone is adjacent to an interior of the wafer surrounded by the edge of the wafer adjacent to the outer zone. 12. An apparatus for etching features in a layer over a wafer, comprising:an etching chamber; a wafer support connected to the etching chamber for mounting the wafer within the etching chamber; a gas distribution system connected to the etching chamber, comprising:an inner zone gas distribution system; and an outer zone gas distribution system, wherein the outer zone gas distribution system surrounds the inner zone gas distribution system; a gas source in fluid connection with the inner zone gas distribution system and the outer zone gas distribution system, wherein the gas source provides a first gas to the inner zone gas distribution system and a second gas to the outer zone gas distribution system, wherein the first gas is different than the second gas; and power source connected to the etch chamber for providing power to the etch chamber sufficient to create plasmas from the first gas and the second gas and cause an etching of the layer to be etched by plasmas from the first gas and the second gas. 13. The apparatus, as recited in claim 12, wherein the gas source comprises:a first gas source; a flow splitter for providing a first fraction of gas from the first gas source to the inner zone gas distribution system and a second fraction of gas fro m the first gas source to the outer zone gas distribution system; and a second gas source to provide a tuning gas to only one of the inner zone gas distribution system and the outer zone gas distribution system. 14. The apparatus, as recited in claim 12, wherein the gas source comprises:a first gas source in fluid contact with the inner zone gas distribution system, but not the outer zone gas distribution system; and a second gas source in fluid contact with the outer zone gas distribution system but not the inner zone gas distribution system. 15. The apparatus, as recited in claim 12, further comprising a control system connected to the gas source and power source, wherein the control system, comprises computer readable code for providing the first gas and the second gas, and energizing the power source to simultaneously create a plasma from the first gas and a plasma from the second gas. 16. A method for etching a layer over a substrate, comprising:placing the substrate in a plasma processing chamber, with a gas distribution system with an inner zone placed opposite an inner portion of the substrate and an outer zone surrounding the inner zone; providing a first gas to the inner zone of the gas distribution system, wherein the first gas comprises at least a first component gas and a second component gas; providing a second gas to the outer zone of the gas distribution system, wherein the second gas comprises at least the first component gas and the second component gas, wherein the first component gas has a lower molecular weight than the second gas component, wherein a ratio of the first component gas to the second component gas for the second gas is greater than a ratio of the first component gas to the second component gas for the first gas; simultaneously generating plasmas from the first gas and second gas; and etching the layer, wherein the layer is etched by the plasmas from the first gas and second gas. 17. The method, as recited in claim 16, further comprising tuning the second gas to the first gas to provide a more uniform etch.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.