The present invention provides a rotating semi-batch ALD device and process which ensure high productivity, minimal particle formation, low gas consumption and high coverage during the production of semiconductors, liquid crystals, LEDs and/or solar cells. The rotating semi-batch ALD device and ALD
The present invention provides a rotating semi-batch ALD device and process which ensure high productivity, minimal particle formation, low gas consumption and high coverage during the production of semiconductors, liquid crystals, LEDs and/or solar cells. The rotating semi-batch ALD device and ALD process are characterized in that: a reaction gas supply means is configured from a shower plate for evenly discharging gas, a cavity for allowing gas to flow down gradually, and a partition wall surrounding the shower plate and the cavity; and a purge gas supply means is configured from a shower plate that causes gas to flow evenly at a high flow velocity in the transverse direction in the narrow gap between the purge gas supply means and substrates being treated.
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1. A rotating semi-batch ALD device, comprising a vacuum container, a rotating susceptor, a plurality of substrates being processed disposed on the susceptor, a substrate heating heater, a plurality of substantially sector-shaped reaction gas supply means disposed in an upper portion of the vacuum c
1. A rotating semi-batch ALD device, comprising a vacuum container, a rotating susceptor, a plurality of substrates being processed disposed on the susceptor, a substrate heating heater, a plurality of substantially sector-shaped reaction gas supply means disposed in an upper portion of the vacuum container, a purge gas supply means disposed between the reaction gas supply means, and a vacuum evacuation means provided as an independent separate system for each reaction gas, wherein the rotating semi-batch ALD device repeatedly exposes the substrates to the reaction gas sequentially by rotating the susceptor to perform an ALD deposition, and at least one reaction gas supply means comprises a porous shower plate, a cavity allowing the gas to flow down, and a partition wall surrounding the cavity, and the purge gas supply means comprises a narrow-gapped shower plate. 2. The rotating semi-batch ALD device according to claim 1, wherein a gas molecule excitation means is disposed in the cavity, wherein the cavity is disposed in the reaction gas supply means containing no metal. 3. The rotating semi-batch ALD device according to claim 2, wherein a means that introduces a cleaning gas for evaporating and removing a deposition material into the gas molecule excitation means is disposed for cleaning or etching the deposition material deposited on the substrates being processed and the susceptor or in the vacuum container. 4. The rotating semi-batch ALD device according to claim 1, wherein a pitch of arrangement of gas ejection holes of the shower plates for the reaction gas and purge gas is set to be 10 mm or less. 5. The rotating semi-batch ALD device according to claim 1, wherein a connection portion between an edge of the shower plate disposed in the reaction gas supply means and the partition wall has a shape with a curvature to prevent stagnation of the reaction gas at the edge. 6. The rotating semi-batch ALD device according to claim 1, wherein a height of the cavity disposed in the reaction gas supply means is set to be 0-5 cm. 7. A rotating semi-batch ALD device, comprising a vacuum container, a rotating susceptor, a plurality of substrates being processed disposed on the susceptor, a substrate heating heater, a plurality of substantially sector-shaped reaction gas supply means disposed in an upper portion of the vacuum container, a purge gas supply means disposed between the reaction gas supply means, and a vacuum evacuation means provided as an independent separate system for each reaction gas, wherein the rotating semi-batch ALD device repeatedly exposes the substrates to the reaction gas sequentially by rotating the susceptor to perform an ALD deposition, and an entire circumference of each reaction gas supply means and each purge gas supply means disposed between the reaction gas supply means is surrounded by a vacuum evacuation groove. 8. The rotating semi-batch ALD device according to claim 7, wherein the purge gas supply means is disposed circularly in a central portion of the vacuum container and a circumference of the purse gas supply part is also surrounded by the vacuum evacuation groove. 9. The rotating semi-batch ALD device according to claim 1, wherein different reaction gas supply means are separated by a diameter of the substrates being processed or more such that two gas supply means do not come above the same substrate. 10. The rotating semi-batch ALD device according to claim 1, wherein an air cushion means and a flexible holding means for accurately controlling a gap between a lower end of a gas supply means and the substrates being processed are combined to be disposed in an upper gas supply means or a rotating susceptor table. 11. The rotating semi-batch ALD device according to claim 1, wherein a relative position relationship between the substrates being processed and a gas supply means at a time of starting and cutting off supply of each reaction gas is controlled to apply an ALD process on all the substrates being processed for the same number of cycles. 12. The rotating semi-batch ALD device according to claim 11, wherein a rotation speed of the susceptor at the time of starting and cutting off supply of each reaction gas is varied and controlled according to the relative position relationship between the substrate and the gas supply unit such that all the substrates being processed are in contact with the reaction gas supply means for the same exposure time. 13. The rotating semi-batch ALD device according to claim 11, wherein a pretreatment process is provided before the ALD process starts, and the relative position relationship between the substrates being processed and the gas supply means at the time of starting and cutting off supply of a pretreatment gas is controlled such that the pretreatment is applied to all the substrates being processed for substantially the same time. 14. The rotating semi-batch ALD device according to claim 1, wherein an ALD saturation reaction time, being a minimum time required for covering all adsorption sites on a surface of the substrate with a reaction gas precursor, is calculated according to a maximum aspect ratio of a pattern formed on the surface of the substrates being processed, and a substrate rotation speed is controlled such that the surface of the substrate is exposed longer than the ALD saturation reaction time, wherein the maximum aspect ratio is a ratio of a depth to a width of a hole or a trench. 15. The rotating semi-batch ALD device according to claim 14, wherein the aspect ratio at any time during the deposition and the ALD saturation reaction time corresponding to the aspect ratio are calculated and the substrate rotation speed is controlled in real time such that the surface of the substrates being processed is constantly exposed longer than the saturation reaction time. 16. The rotating semi-batch ALD device according to claim 14, wherein the ALD saturation reaction time is calculated and approximated by a linear function or a quadratic function of the maximum aspect ratio of a surface shape of the substrates being processed, and the substrate rotation speed is controlled such that the surface of the substrate is exposed longer than the calculated ALD saturation reaction time. 17. The rotating semi-batch ALD device according to claim 15, wherein the ALD saturation reaction time is calculated and approximated by a linear function or a quadratic function of the maximum aspect ratio of the surface shape of the substrates being processed, and the substrate rotation speed is controlled such that the surface of the substrate is exposed longer than the calculated ALD saturation reaction time. 18. The rotating semi-batch ALD device according to claim 16, wherein the quadratic function representing the ALD saturation reaction time is approximated by ts0(1+γα2), wherein the aspect ratio is represented by α and ts0 and γ are set to be constant. 19. The rotating semi-batch ALD device according to claim 16, wherein a saturation time ts1 of an aspect ratio α1 of a point at a process pressure P1 and a temperature T1 is measured, a saturation time ts of the aspect ratio α at random temperature T and pressure P is calculated by ts=ts1(α/α1)2(P1/P)(T1/T)0.5, and a rotation speed of the susceptor is adjusted to maintain an obtained saturation reaction time.
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