Methods for depositing silicon oxycarbide (SiOC) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that does n
Methods for depositing silicon oxycarbide (SiOC) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that does not comprise nitrogen and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOC films having improved acid-based wet etch resistance.
대표청구항▼
1. A method of forming a silicon oxycarbide (SiOC) thin film on a substrate in a reaction space by a plasma enhanced atomic layer deposition (PEALD) process, wherein the PEALD process comprises at least one deposition cycle comprising: contacting a surface of the substrate with a vapor phase silicon
1. A method of forming a silicon oxycarbide (SiOC) thin film on a substrate in a reaction space by a plasma enhanced atomic layer deposition (PEALD) process, wherein the PEALD process comprises at least one deposition cycle comprising: contacting a surface of the substrate with a vapor phase silicon precursor that does not comprise nitrogen;contacting the surface of the substrate with at least one reactive species generated by plasma formed from a second reactant comprising hydrogen, wherein the second reactant does not comprise oxygen; andoptionally repeating the contacting steps until a SiOC film of a desired thickness has been formed. 2. The method of claim 1, wherein a ratio of a wet etch rate of the SiOC thin film to a wet etch rate of thermal silicon oxide is less than about 5. 3. The method of claim 1, wherein the SiOC thin film is deposited on a three-dimensional structure on the substrate. 4. The method of claim 3, wherein a wet etch rate ratio of a wet etch rate of SiOC formed on a vertical surface of the three-dimensional structure to a wet etch rate of the SiOC formed on a horizontal surface of the three-dimensional structure is about 1:20 to about 20:1 in 0.5 wt % dilute HF. 5. The method of claim 1, wherein the vapor phase silicon precursor does not comprise a halogen. 6. The method of claim 1, wherein the vapor phase silicon precursor comprises bis(triethoxysilyl)ethane (BTESE). 7. The method of claim 1, wherein the vapor phase silicon precursor comprises 3-methoxypropyltrimethoxysilane (MPTMS). 8. The method of claim 1, wherein the reactive species comprises hydrogen plasma, hydrogen atoms, hydrogen radicals, or hydrogen ions. 9. The method of claim 8, wherein the second reactant comprises H2. 10. The method of claim 1, wherein the reactive species is generated from a second reactant comprising a noble gas. 11. The method of claim 1, wherein the reactive species is generated from a second reactant comprising less than about 20 atomic % nitrogen. 12. The method of claim 1, wherein the SiOC thin film comprises at least 20 at % oxygen. 13. The method of claim 1, wherein the SiOC thin film comprises at least 0.1 at % carbon. 14. The method of claim 1, wherein the SiOC thin film comprises less than about 10 at % nitrogen. 15. A method of forming a silicon oxycarbide (SiOC) thin film on a substrate in a reaction space comprising a plurality of deposition cycles, wherein at least one deposition cycle comprises: alternately and sequentially contacting a surface of the substrate with a silicon precursor that does not comprise nitrogen and a second reactant comprising at least one reactive species comprising hydrogen;wherein the deposition cycle is repeated two or more times to form the SiOC thin film. 16. The method of claim 15, wherein the at least one reactive species is generated by plasma formed from a gas that does not comprise oxygen. 17. The method of claim 15, wherein the at least one reactive species is generated by plasma formed from a gas that does not comprise nitrogen. 18. The method of claim 15, wherein the silicon precursor has a general formula: (RIIO)3Si—RI—Si(ORII)3;wherein RI and RII are independently selected C1-C5 alkyl ligands. 19. The method of claim 18, wherein the silicon precursor comprises BTESE. 20. The method of claim 15, wherein the silicon precursor has a general formula: Si(ORI)4-xRIIx wherein x is an integer from 0 to 3, RI is an independently selected C1-C7 alkyl ligand, and RII is an independently selected ligand consisting of carbon, and/or hydrogen, and/or oxygen. 21. The method of claim 20, wherein the silicon precursor comprises MPTMS. 22. The method of claim 15, wherein the silicon precursor has a general formula: (RIO)4-xSi—(RII—O—RIII)x wherein x is an integer from 0 to 3, RI and RII are each independently selected C1-C7 alkyl ligands, and RIII is an independently selected ligand consisting of carbon, and/or hydrogen, and/or oxygen. 23. The method of claim 15, wherein at least one deposition cycle is a plasma enhanced atomic layer deposition (PEALD) cycle. 24. The method of claim 23, wherein a reactive species is generated by applying RF power of 5 Watts (W) to about 5000 W to the second reactant. 25. The method of claim 15, wherein the deposition cycle is carried out at a process temperature of about 100° C. to about 300° C. 26. The method of claim 15, wherein the deposition cycle is carried out at a process temperature of less than about 100° C. 27. The method of claim 15, wherein the substrate comprises an organic material. 28. A method for depositing a silicon oxycarbide (SiOC) thin film on a substrate in a reaction space comprising: contacting a surface of the substrate with a silicon precursor that does not comprise nitrogen;exposing the substrate to a purge gas and/or vacuum to remove excess silicon precursor and reaction byproducts, if any;contacting a surface of the substrate with a second reactant comprising hydrogen, wherein the second reactant comprises at least one reactive species generated by plasma;exposing the substrate to a purge gas and/or vacuum to remove excess second reactant and reaction byproducts, if any;repeating the contacting steps until a SiOC thin film of desired thickness has been formed.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.