The present invention is a plasma etching method comprising subjecting a silicon-containing film to plasma etching using a process gas, the process gas comprising a linear saturated fluorohydrocarbon compound represented by a formula (1), and a gaseous fluorine-containing compound (excluding the com
The present invention is a plasma etching method comprising subjecting a silicon-containing film to plasma etching using a process gas, the process gas comprising a linear saturated fluorohydrocarbon compound represented by a formula (1), and a gaseous fluorine-containing compound (excluding the compound represented by the formula (1)) that functions as a fluorine radical source under plasma etching conditions, wherein x represents 3 or 4, y represents an integer from 5 to 9, and z represents an integer from 1 to 3. The present invention provides a plasma etching method that can selectively etch the silicon-containing film with respect to the mask, and form a hole or a trench having a good shape within a short time. CxHyFz (1)
대표청구항▼
1. A plasma etching method comprising subjecting a silicon-containing film to plasma etching using a process gas, the process gas comprising a linear saturated fluorohydrocarbon compound represented by a formula (1), and a gaseous fluorine-containing compound (excluding the compound represented by t
1. A plasma etching method comprising subjecting a silicon-containing film to plasma etching using a process gas, the process gas comprising a linear saturated fluorohydrocarbon compound represented by a formula (1), and a gaseous fluorine-containing compound (excluding the compound represented by the formula (1)) that functions as a fluorine radical source under plasma etching conditions, CxHyFz (1) wherein x represents 3 or 4, y represents an integer from 5 to 9, and z represents an integer from 1 to 3. 2. The plasma etching method according to claim 1, wherein the process gas comprises the linear saturated fluorohydrocarbon compound and the gaseous fluorine-containing compound in a volume ratio of 1:99 to 99:1. 3. The plasma etching method according to claim 1, wherein the fluorine-containing compound is a compound selected from a group consisting of CF4, CHF3, NF3, and SF6. 4. The plasma etching method according claim 1, wherein the process gas further comprises a reactive gas so that a volume ratio of a total amount of the linear saturated fluorohydrocarbon compound and the gaseous fluorine-containing compound to the reactive gas is 1:0.1 to 1:5. 5. The plasma etching method according to claim 4, wherein the reactive gas is either or both of oxygen gas and nitrogen gas. 6. The plasma etching method according to claim 1, wherein the process gas further comprises a non-reactive gas so that a volume ratio of a total amount of the linear saturated fluorohydrocarbon compound and the gaseous fluorine-containing compound to the non-reactive gas is 1:0.1 to 1:5. 7. The plasma etching method according to claim 6, wherein the non-reactive gas is at least one non-reactive gas selected from a group consisting of helium, argon, neon, krypton, and xenon. 8. The plasma etching method according claim 1, wherein the silicon-containing film is a film that comprises a silicon oxide film and a silicon nitride film. 9. The plasma etching method according to claim 1, wherein the silicon-containing film is a silicon oxide film, a silicon nitride film, or a multi-layer film thereof. 10. The plasma etching method according to claim 1, comprising forming an ArF resist, a KrF resist, an i-line resist, a g-line resist, an amorphous carbon film, or a coating-type carbon film on a surface of the silicon-containing film as a mask.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.