Dry Etching Agent Composition and Dry Etching Method
원문보기
IPC분류정보
국가/구분
United States(US) Patent
공개
국제특허분류(IPC7판)
H01L-021/311
C09K-013/00
출원번호
16341695
(2017-10-23)
공개번호
20190287812
(2019-09-19)
우선권정보
JP-2016-229880 (2016-11-28)
국제출원번호
PCT/JP2017/038100
(2017-10-23)
발명자
/ 주소
OOMORI, Hiroyuki
YAO, Akifumi
MORI, Isamu
출원인 / 주소
OOMORI, Hiroyuki
인용정보
피인용 횟수 :
0인용 특허 :
0
초록▼
Disclosed is the invention of a dry etching agent composition including: 1,3,3,3-tetrafluoropropene; and a hydrochlorofluorocarbon represented by CHxClyFz (wherein x, y and z are integers of 1 or greater and x+y+z=4), wherein a concentration of the hydrochlorofluorocarbon relative to 1,3,3,3-tetrafl
Disclosed is the invention of a dry etching agent composition including: 1,3,3,3-tetrafluoropropene; and a hydrochlorofluorocarbon represented by CHxClyFz (wherein x, y and z are integers of 1 or greater and x+y+z=4), wherein a concentration of the hydrochlorofluorocarbon relative to 1,3,3,3-tetrafluoropropene is 3 volume ppm or greater to less than 10000 volume ppm, and a use of this dry etching agent composition. An object of the present invention is to suppress corrosion of storage container, pipes and an etching chamber by suppressing generation of acidic substances by improving storage stability of HFO-1234ze without losing excellent etching characteristics of HFO-1234ze.
대표청구항▼
1. A dry etching agent composition, comprising: 1,3,3,3-tetrafluoropropene; anda hydrochlorofluorocarbon represented by CHxClyFz (wherein x, y and z are integers of 1 or greater and x+y+z=4),wherein a concentration of the hydrochlorofluorocarbon relative to 1,3,3,3-tetrafluoropropene is 3 volume ppm
1. A dry etching agent composition, comprising: 1,3,3,3-tetrafluoropropene; anda hydrochlorofluorocarbon represented by CHxClyFz (wherein x, y and z are integers of 1 or greater and x+y+z=4),wherein a concentration of the hydrochlorofluorocarbon relative to 1,3,3,3-tetrafluoropropene is 3 volume ppm or greater to less than 10000 volume ppm. 2. The dry etching agent composition according to claim 1, wherein the hydrochlorofluorocarbon is chlorodifluoromethane. 3. The dry etching agent composition according to claim 1, wherein a concentration of the hydrochlorofluorocarbon in the dry etching agent composition is 3 volume ppm or greater to less than 1000 volume ppm. 4. A storage container, wherein a dry etching agent composition according to claim 1 is filled and sealed therein. 5. The storage container according to claim 4, wherein, relative to 1,3,3,3-tetrafluoropropene, 10 volume ppm or greater to 10000 volume ppm or less of oxygen is contained, and 1 volume ppm or greater to 10000 volume ppm or less of water is contained in the storage container. 6. A dry etching method, comprising the steps of: converting a dry etching agent to plasma, the dry etching agent in which 1,3,3,3-tetrafluoropropene and a hydrochlorofluorocarbon represented by CHxClyFz (wherein x, y and z are integers of 1 or greater and x+y+z=4) are contained, and a concentration of the hydrochlorofluorocarbon relative to 1,3,3,3-tetrafluoropropene is 3 volume ppm or greater to less than 10000 volume ppm; andetching silicon oxide or silicon nitride by using plasma gas converted into plasma. 7. The dry etching method according to claim 6, wherein the hydrochlorofluorocarbon is chlorodifluoromethane. 8. The dry etching method according to claim 6, wherein the concentration of the hydrochlorofluorocarbon in the dry etching agent is 3 volume ppm or greater to less than 1000 volume ppm. 9. The dry etching method according to claim 6, wherein, relative to 1,3,3,3-tetrafluoropropene, 10 volume ppm or greater to 10000 volume ppm or less of oxygen is contained and 1 volume ppm or greater to 10000 volume ppm or less of water is contained in the dry etching agent. 10. The dry etching method according to claim 6, wherein the etching agent contains an additive gas, and wherein the additive gas is at least one gas selected from the group consisting of O2, O3, CO, CO2, COCl2, COF2, CF2(OF)2, CF3OF, NO2, NO, F2, NF3, Cl2, Br2, I2 and XFn (wherein, in a formula, X represents Cl, Br, or I, n is an integer, and 1≤n≤7). 11. The dry etching method according to claim 6, wherein the dry etching agent further contains an inert gas, and wherein the inert gas is at least one gas selected from the group consisting of N2, He, Ar, Ne, Kr and Xe. 12. (canceled)
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