A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosph
A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof, and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
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1. A semiconductor element comprising a pipe channel, wherein the pipe channel comprises:a cell gate structure formed on a substrate on which an interlayer insulating layer and a gate electrode layer are alternatively stacked, andpipe channel holes formed by etching nitride layers buried in at least
1. A semiconductor element comprising a pipe channel, wherein the pipe channel comprises:a cell gate structure formed on a substrate on which an interlayer insulating layer and a gate electrode layer are alternatively stacked, andpipe channel holes formed by etching nitride layers buried in at least one hole formed selectively etching the cell gate structure by a composition for etching,wherein the composition for etching comprises:a first inorganic acid,a first additive, being any one selected from a group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof,a second additive comprising a silane inorganic acid salt produced by reaction between a nitric acid and a second silane compound; anda solvent,wherein:the silane compound is a compound selected from Chemical Formulas 10, 20, and their combination,the silane inorganic acid salt is represented by Chemical Formula C260-1. (In Chemical Formula 10 and Chemical Formula 20, each R1 to R10 is independently selected from a group consisting of hydrogen atom, halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms, at least one of R1 to R4 is hydrogen, or an alkoxy group having 1 to 10 carbon atoms, and n is one of integer numbers from 1 to 10,) (In Chemical Formula C260-1, each R111 to R112 is independently selected from a group consisting of hydrogen atom, halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms, each R113 to R114 is independently hydrogen, n4 is one of integer numbers from 0 to 2, l1 is one of integer numbers from 0 to 10, m1 is 0 or 1.) 2. The semiconductor element of claim 1, wherein any one of hydrogen of R113 to R114 in the Chemical Formula C260-1 is substituted by Chemical Formula C280-1. (In Chemical Formula C280-1, any one of R131 to R132 is a coupler coupling to Chemical Formula C260-1, the other is independently selected from a group consisting of hydrogen atom, halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms, and each R113 to R115 is independently hydrogen atom, or substituted by a substituent represented by Chemical Formula C280-1, n4 is one of integer numbers from 0 to 2, l1 is one of integer numbers from 0 to 10, m1 is 0 or 1.) 3. The semiconductor element of claim 1, wherein the silane inorganic acid salt represented by Chemical Formula C260-1 is any one selected from a group consisting of Chemical Formulas 72, 73, 77, 264 and their combination. (In Chemical Formulas 72, 73, 77, and 264, each R1-1, R1-2, R1-3, R1-4, R21, and R23 is independently selected from a group consisting of hydrogen atom, halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms.) 4. The semiconductor element of claim 1, wherein the composition for etching comprises the first additive at a proportion of 0.01% to 15% by weight, the first inorganic acid at a proportion of 70% to 99% by weight, the second additive at a proportion of 0.01% to 20% by weight, and the solvent as the balance. 5. A semiconductor element comprising a pipe channel, wherein the pipe channel comprises:a cell gate structure formed on a substrate on which an interlayer insulating layer and a gate electrode layer are alternatively stacked, andpipe channel holes formed by etching nitride layers buried in at least one hole formed selectively etching the cell gate structure by a composition for etching,wherein the composition for etching comprises:a first inorganic acid,a first additive, being any one selected from a group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof,a second additive comprising a compound represented by Chemical Formulas 300, 350, and their combination,a solvent. (In Chemical Formula 300, each R1 to R4 is independently selected from a group consisting of a hydrogen atom, a halogen atom, a hydroxyl group, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, an aminoalkyl group having 1 to 10 carbon atoms, an aminoalkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms, and two or three of each R1 to R4 is independently a hydroxy group, at least one of R1 to R4 is an alkoxy group having 1 to 10 carbon atoms, an aminoalkyl group having 1 to 10 carbon atoms, an aminoalkoxy group having 1 to 10 carbon atoms.) (In Chemical Formula 350, each R2 to R5 is independently selected from a group consisting of a hydrogen atom, a halogen atom, a hydroxyl group, an alky group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, an aminoalkyl group having 1 to 10 carbon atoms, an aminoalkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms, at least any one of R2 to R5 is an alkoxy group having 1 to 10 carbon atoms, an aminoalkyl group having 1 to 10 carbon atoms, or an aminoalkoxy group having 1 to 10 carbon atoms, n is an integer from 1 to 4.) 6. The semiconductor element of claim 5, wherein the composition for etching comprises the first additive at a proportion of 0.01% to 15% by weight, the first inorganic acid at a proportion of 70% to 99% by weight, the second additive at a proportion of 0.01% to 20% by weight, and the solvent as the balance.
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