METHODS AND APPARATUS FOR ETCHING SEMICONDUCTOR STRUCTURES
원문보기
IPC분류정보
국가/구분
United States(US) Patent
공개
국제특허분류(IPC7판)
H01J-037/32
H01L-021/67
출원번호
17151349
(2021-01-18)
공개번호
20210142987
(2021-05-13)
발명자
/ 주소
SHIMIZU, Daisuke
HATAKEYAMA, Taiki
KANG, Sean S.
KAWASAKI, Katsumasa
ZHANG, Chunlei
출원인 / 주소
SHIMIZU, Daisuke
인용정보
피인용 횟수 :
0인용 특허 :
0
초록▼
Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching (RIE). In some embodiments, a method comprises flowing a gas mixture of C3H2F4 and a companion gas into a process chamber, forming a plasma from the gas mixture using an RF power source connected
Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching (RIE). In some embodiments, a method comprises flowing a gas mixture of C3H2F4 and a companion gas into a process chamber, forming a plasma from the gas mixture using an RF power source connected to an upper electrode above the substrate and at least one RF bias power source connected to a lower electrode under the substrate, performing an anisotropic etch, via the plasma, of at least one layer of oxide or nitride on the substrate using a pattern mask, reducing power of the at least one RF bias power source to produce deposition of a passivation layer on the at least one layer of oxide or nitride on the substrate, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.
대표청구항▼
1. A method for etching a substrate, comprising: flowing a gas mixture of C3H2F4 and a companion gas into a process chamber;forming a plasma from the gas mixture;applying a pulsed DC power to an upper electrode above the substrate or to a lower electrode below the substrate;performing an etch, via t
1. A method for etching a substrate, comprising: flowing a gas mixture of C3H2F4 and a companion gas into a process chamber;forming a plasma from the gas mixture;applying a pulsed DC power to an upper electrode above the substrate or to a lower electrode below the substrate;performing an etch, via the plasma, of at least one layer on the substrate;reducing a bias power to produce deposition of a passivation layer on the substrate; andevacuating the process chamber while interrupting power to stop plasma formation. 2. The method of claim 1, further comprising: forming the plasma using an RF power source and at least one RF bias power source;pulsing the RF power source to form the plasma; andpulsing the at least one RF bias power source to assist in ion attraction towards the substrate, wherein the pulsed DC power is synchronized with the RF power source and the at least one RF bias power source. 3. The method of claim 2, further comprising: linking the RF power source to the at least one RF bias power source and respective impedance matching networks to adjust RF power delivery to the process chamber on an order of microseconds. 4. The method of claim 2, further comprising: forming the plasma with the RF power source operating at a frequency of approximately 100 MHz to approximately 200 MHz; andperforming the etch with the at least one RF bias power source operating at a frequency less than approximately 6 MHz. 5. The method of claim 2, wherein the RF power source has a peak power level less than the at least one RF bias power source. 6. The method of claim 1, further comprising: repeating the method to form at least one hole through a plurality of alternating oxide and nitride layers on the substrate to expose portions of the substrate. 7. The method of claim 1, further comprising: performing a dynamic ramping of at least one process parameter. 8. The method of claim 7, wherein the at least one process parameter is a gas flow rate, the pulsed DC power, a bias power source, a plasma power source, or a pressure of the process chamber. 9. The method of claim 7, further comprising: dynamically ramping the at least one process parameter based on a processing time or etch depth. 10. The method of claim 1, wherein the companion gas is a fluorocarbon gas of C3F6. 11. The method of claim 1, further comprising: etching alternating layers of oxide and nitride on the substrate with the gas mixture of C3H2F4 and the companion gas having an oxide to nitride selectivity of approximately 1:1. 12. A method for etching a substrate, comprising: flowing a gas mixture of C3H2F4 and a companion gas into a process chamber, the gas mixture having an oxide to nitride etching selectively of approximately 1:1;forming plasma from the gas mixture;applying a pulsed DC power to an upper electrode above the substrate or to a lower electrode below the substrate;performing an etch, via the plasma, of at least one layer of oxide or nitride on the substrate on the substrate;depositing a passivation layer on the at least one layer of oxide or nitride on the substrate; andevacuating the process chamber while interrupting power to stop plasma formation. 13. The method of claim 12, further comprising: ramping a flow rate of the gas mixture downward based on processing time or etch depth. 14. The method of claim 12, further comprising: dynamically ramping one or more process parameters to provide active aspect ratio dependent etching control for selective reactive ion etching by depth. 15. The method of claim 12, further comprising: generating a first RF power pulse of an RF power source to form the plasma in the process chamber;generating a first RF bias power pulse of at least one RF bias power source during the first RF power pulse to perform the etch in conjunction with the pulsed DC power of the at least one layer of oxide or nitride on the substrate, a duration of the first RF bias power pulse being less than a duration the first RF power pulse;depositing the passivation layer during the first RF power pulse when the first RF bias power pulse is completed; andevacuating the process chamber when the first RF power pulse is completed. 16. The method of claim 15, further comprising: ramping a power level of the first RF power pulse upward for subsequent RF power pulses to a peak power of approximately 3 kW to approximately 4 kW at a rate of approximately one kilowatt per second to approximately two kilowatts per second. 17. The method of claim 15, further comprising: ramping a power level of the first RF bias power pulse upward for subsequent RF bias power pulses to a peak power of approximately 10 kW to approximately 15 kW at a rate of approximately one kilowatt per second to approximately two kilowatts per second. 18. The method of claim 15, further comprising: ramping a power level of pulses of the RF power source or the RF bias power source upward based on processing time or etch depth. 19. A non-transitory computer readable medium having instructions stored thereon that, when executed, cause a method of operating a substrate processing system to be performed, the method comprising: flowing a gas mixture of C3H2F4 and a companion gas into a process chamber;forming a plasma from the gas mixture;applying a pulsed DC power to an upper electrode above the substrate or to a lower electrode below the substrate;performing an etch, via the plasma, of at least one layer on the substrate;reducing a bias power to produce deposition of a passivation layer on the substrate; andevacuating the process chamber while interrupting power to stop plasma formation. 20. The non-transitory computer readable medium of claim 19, the method further comprising: forming the plasma using an RF power source and at least one RF bias power source;pulsing the RF power source to form the plasma; andpulsing the at least one RF bias power source to assist in ion attraction towards the substrate, wherein the pulsed DC power is synchronized with the RF power source and the at least one RF bias power source.
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