초록 ▼

Discrete InP-InGaAsP mesa double heterostructure lasers have been fabricated by a batch process in which the laser mirrors are formed by chemically etching the wafer from the top surface down into the substrate. A feature of the process is that the metal contact on the top surface is recessed within

Discrete InP-InGaAsP mesa double heterostructure lasers have been fabricated by a batch process in which the laser mirrors are formed by chemically etching the wafer from the top surface down into the substrate. A feature of the process is that the metal contact on the top surface is recessed within the periphery of an overlying mask, and the etching time is controlled so that the contact is not undercut by the sidewalls of the mesa. Another feature is the use of a self-limiting etchant which etches the mirrors smoothly and at a faster rate than the sidewalls. Preferably, the mirrors etch isotropically and the sidewalls etch preferentially along crystallographic planes. Also described is subsequent batch processing (e.g., forming mirror coatings) and on-wafer testing of the etched-mirror lasers.

대표청구항 ▼

A method of fabricating mesa geometry devices from a semiconductor body comprising the steps of forming a plurality of metal layers on separate localized portions of a major surface of said body, forming an etch-resistant mask over each of said metal layers so that each of said metal layers is reces

A method of fabricating mesa geometry devices from a semiconductor body comprising the steps of forming a plurality of metal layers on separate localized portions of a major surface of said body, forming an etch-resistant mask over each of said metal layers so that each of said metal layers is recessed within the periphery of its corresponding mask and other portions of said surface are exposed, subjecting said body to an etchant effective to attack said other portions of said surface thereby forming said mesas under said masks, and controlling the etching time so that said mesas do not undercut said metal layers.