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The deposition of thin films is carried out by a co-sputtering cathode technique particularly suited for deposition of doped thin films on large area substrates. A relatively large planar magnetron sputtering apparatus having a rectangular (picture frame shaped) plasma region is provided to obtain e

The deposition of thin films is carried out by a co-sputtering cathode technique particularly suited for deposition of doped thin films on large area substrates. A relatively large planar magnetron sputtering apparatus having a rectangular (picture frame shaped) plasma region is provided to obtain efficient sputtering of the host material. A vacant center area defined by the plasma region is provided for diode sputtering of the dopant. In RF sputtering, co-excitation of the power source is desired to prevent RF mode beating.

대표청구항 ▼

A sputtering cathode apparatus for deposition of a doped thin film on a substrate which is moved relative to said apparatus, comprising; planar magnetron sputtering means including means defining a frame-shaped plasma area and having a host target material disposed in the magnetron plasma area, diod

A sputtering cathode apparatus for deposition of a doped thin film on a substrate which is moved relative to said apparatus, comprising; planar magnetron sputtering means including means defining a frame-shaped plasma area and having a host target material disposed in the magnetron plasma area, diode sputtering means disposed inside said framed area and out of the plasma sputtering area and comprising a dopant material, and means for electrically exciting said host target material and dopant material to provide co-deposition of said materials therby forming the doped thin film on the substrate.