초록 ▼

A semiconductor gas sensor for use in equipment for detecting small amounts of H2S. The method of sensor fabrication comprises spray deposition of a mixture of metal oxides mixed together with various metal and non-metal materials which serve in the finished product as activators, dopants, and/or fi

A semiconductor gas sensor for use in equipment for detecting small amounts of H2S. The method of sensor fabrication comprises spray deposition of a mixture of metal oxides mixed together with various metal and non-metal materials which serve in the finished product as activators, dopants, and/or film binder materials, and including in suspension a molecular sieve material, for enhancing and defining porosity on a scale of molecular dimensions in the finished sensor. All of the foregoing materials are suspended in a suitable solution and preferably sprayed onto a heated insulating substrate to form the finished product. The example sensor, capable of selective detection of H2S in air and a sensitivity of less than 1 PPM (part per million), is comprised of a platinum activated alumina, tin oxide, and zeolite molecular sieve material.

대표청구항 ▼

A semiconductor sensor for specific gases comprising a multiple layered structure including an insulating substrate having a discrete semiconductor layer deposited thereon formed by spraying a liquid suspension of a mixture comprising a preselected solid metal/oxide semiconductor capable of sensing

A semiconductor sensor for specific gases comprising a multiple layered structure including an insulating substrate having a discrete semiconductor layer deposited thereon formed by spraying a liquid suspension of a mixture comprising a preselected solid metal/oxide semiconductor capable of sensing a specific gas and a porosity enhancing and defining agent capable of defining pore sizes in said layer of a predetermined size which is selected to permit a predetermined specific gas to come into contact with the semiconductor within said layer.