[특허]Semiconductor device-based sensors

Semiconductor device-based sensors 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-023/58
출원번호	US-0879704 (2004-06-28)
등록번호	US-7361946 (2008-04-22)
발명자 / 주소	Johnson,Jerry W. Piner,Edwin L. Linthicum,Kevin J.
출원인 / 주소	Nitronex Corporation
대리인 / 주소	Wolf, Greenfield & Sacks, P.C.
인용정보	피인용 횟수 : 51 인용 특허 : 84

초록 ▼

Semiconductor device-based chemical sensors and methods associated with the same are provided. The sensors include regions that can interact with chemical species being detected. The chemical species may, for example, be a component of a fluid (e.g., gas or liquid). The interaction between the chemical species and a region of the sensor causes a change in a measurable property (e.g., an electrical property) of the device. These changes may be related to the concentration of the chemical species in the medium being characterized.

대표청구항 ▼

What is claimed is: 1. A FET-based chemical sensor designed to detect a chemical species comprising: a semiconductor material region comprising a gallium nitride material layer; a source electrode formed on the semiconductor material region; a drain electrode formed on the semiconductor material region; a gate electrode formed on the semiconductor material region; and a sensing region comprising the gallium nitride material layer and a sensing electrode, laterally separated from the gate electrode, and capable of interacting with the chemical species to change a measurable property of the chemical sensor. 2. The sensor of claim 1, wherein the sensing region comprises a surface region of the gallium nitride material layer positioned under the sensing electrode. 3. The sensor of claim 1, wherein the sensing region is formed between the source electrode and the drain electrode. 4. The sensor of claim 1, wherein a ratio of sensing electrode surface area to total channel surface area is greater than 0.35. 5. The sensor of claim 1, wherein a separate voltage may be applied to each of the source, drain, gate and sensing electrodes. 6. The sensor of claim 1, further comprising a substrate. 7. The sensor of claim 6, wherein the substrate is a silicon substrate. 8. The sensor of claim 6, further comprising a compositionally-graded transition layer formed between the substrate and the semiconductor material region. 9. The sensor of claim 1, wherein the chemical species is a gaseous species. 10. The sensor of claim 1, wherein the interaction between the chemical species and the sensing region results in a change in the drain current of the sensor. 11. The sensor of claim 1, wherein the interaction between the chemical species and the sensing region changes the surface potential of the gallium nitride material layer. 12. The sensor of claim 1, wherein the chemical species is adsorbed by the sensing region during operation. 13. The sensor of claim 1, wherein the sensing region is positioned between the gate electrode and the drain electrode. 14. The sensor of claim 1, wherein the source, gate and drain electrodes are formed on the gallium nitride material layer. 15. The sensor of claim 1, wherein the gate electrode is isolated from the chemical species.

이 특허에 인용된 특허 (84)

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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

내보내기 구분	파일저장 인쇄 메일전송
구성항목	기본정보 상세정보 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표IPC 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 공고번호, 공고일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표출원인, 출원인국적, 출원인주소, 발명자, 발명자E, 발명자코드, 발명자주소, 발명자 우편번호, 발명자국적, 대표IPC, IPC코드, 요약, 미국특허분류, 대리인주소, 대리인코드, 대리인(한글), 대리인(영문), 국제공개일자, 국제공개번호, 국제출원일자, 국제출원번호, 우선권, 우선권주장일, 우선권국가, 우선권출원번호, 원출원일자, 원출원번호, 지정국, Citing Patents, Cited Patents
저장형식	Text(ASCII format) Excel format PIAS분석(.xls)
메일정보	받는사람 (필수) @ 보내는사람 (선택) @ 제목 내용 KISTI 검색결과 이메일 서비스
안내	총 건의 자료가 검색되었습니다. 다운받으실 자료의 인덱스를 입력하세요. (1-10,000) 검색결과의 순서대로 최대 10,000건 까지 다운로드가 가능합니다. 데이타가 많을 경우 속도가 느려질 수 있습니다.(최대 2~3분 소요) 다운로드 파일은 UTF-8 형태로 저장됩니다. 파일의 내용이 제대로 보이지 않을실 때는 웹브라우저 상단의 보기 -> 인코딩 -> 자동선택 여부를 확인하십시오. ~ Text(ASCII format) Excel format

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