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특허 상세정보

Radiation hardened CMOS on SOI or SOS devices

국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H01L-027/01    H01L-027/12   
미국특허분류(USC) 357/237 ; 357/4
출원번호 US-0304759 (1989-01-31)
발명자 / 주소
출원인 / 주소
인용정보 피인용 횟수 : 63  인용 특허 : 5
초록

A radiation hardened CMOS transistor has a source region, drain region and channel region formed on an SOI or SOS wafer. End plugs of opposite conductivity to that of the source and drain regions are connected to the channel region. In one embodiment, the end plugs extend along opposite ends of the source region but not along the drain region. In another embodiment, the end plugs extend along opposite ends of the source region and the drain region, and the drain region includes portions adjacent the end plugs having an impurity concentration which is sig...

대표
청구항

A radiation hardened MOS SOI or SOS transistor comprising: a silicon-on-insulator or a silicon-on-sapphire wafer; a source region formed on said wafer; a drain region formed on said wafer; a channel region formed on said wafer between and contiguous with said source region and said drain region; said source region and said drain region being of one conductivity type and said channel being of an opposite conductivity type; end plugs connected to said channel region and extending along opposite ends of said source region but not along said drain region, sa...

이 특허를 인용한 특허 피인용횟수: 63

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