FCVD line bending resolution by deposition modulation
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IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/02
B81B-003/00
C23C-016/40
C23C-016/505
C23C-016/452
C23C-016/455
출원번호
US-0954634
(2015-11-30)
등록번호
US-9896326
(2018-02-20)
발명자
/ 주소
Liang, Jingmei
Thadani, Kiran V.
Kachian, Jessica S.
Rajagopalan, Nagarajan
출원인 / 주소
Applied Materials, Inc.
대리인 / 주소
Patterson + Sheridan, LLP
인용정보
피인용 횟수 :
0인용 특허 :
4
초록▼
A method of reducing line bending and surface roughness of a substrate with pillars includes forming a treated surface by treating a pillar-containing substrate with a radical. The radical may be silicon-based, nitrogen-based or oxygen-based. The method may include forming a dielectric film over the
A method of reducing line bending and surface roughness of a substrate with pillars includes forming a treated surface by treating a pillar-containing substrate with a radical. The radical may be silicon-based, nitrogen-based or oxygen-based. The method may include forming a dielectric film over the treated surface by reacting an organosilicon precursor and an oxygen precursor. The method may include curing the dielectric film at a temperature of about 150° C. or less. A method of reducing line bending and surface roughness of a substrate with pillars includes forming a dielectric film over a pillar-containing substrate by reacting an organosilicon precursor, an oxygen precursor, and a radical precursor. The method may include curing the dielectric film at a temperature of about 150° C. or less. The radical precursor may be selected from the group consisting of nitrogen-based radical precursor, oxygen-based radical precursor, and silicon-based radical precursor.
대표청구항▼
1. A method of reducing line bending and surface roughness of a substrate with pillars, comprising: forming first radicals and ions in a remote plasma system that is a radical source;controlling flow of ions toward the pillar-containing substrate via a radical distribution plate configured to filter
1. A method of reducing line bending and surface roughness of a substrate with pillars, comprising: forming first radicals and ions in a remote plasma system that is a radical source;controlling flow of ions toward the pillar-containing substrate via a radical distribution plate configured to filter ions;forming second radicals in a dual-channel showerhead, wherein the first radicals and the second radicals are independently silicon-based, nitrogen-based or oxygen-based;forming a treated surface by treating the pillar-containing substrate with the first radicals and the second radicals;forming a dielectric film over the pillar-containing substrate by reacting an organosilicon precursor, an oxygen precursor, and at least one of the first and second radicals at a temperature of about 100° C. or less at a pressure between about 0.5 Torr and about 10 Torr, wherein the organosilicon precursor is introduced into a processing region at a flow rate between about 10 sccm and about 1800 sccm, the oxygen precursor is introduced into the processing region at a flow rate between about 10 mgm and about 1,500 mgm, and a radical precursor is introduced to the radical source at a flow rate between about 600 sccm and about 1,250 sccm; andcuring the dielectric film at a temperature of about 150° C. or less, wherein the radical precursor is selected from the group consisting of nitrogen-based radical precursor, oxygen-based radical precursor, and silicon-based radical precursor. 2. The method of claim 1, wherein the organosilicon precursor is selected from the group consisting of triethoxysiloxane, tetramethoxysiloxane, trimethoxysiloxane, hexamethoxydisiloxane, octamethoxytrisiloxane, and octamethoxydodecasiloxane. 3. The method of claim 1, wherein the organosilicon precursor is a silazoxane selected from the group consisting of hexamethoxydisilazoxane, methyl hexamethoxydisilazoxane, chlorohexamethoxydisilazoxane, hexaethoxydi-silazoxane, nonamethoxytrisilazoxane, and octamethoxycyclosilazoxane. 4. The method of claim 1, wherein the organosilicon precursor is a halogenated siloxane selected from the group consisting of tetrachlorosilane, dichlorodiethoxysiloxane, chlorotriethoxysiloxane, hexachlorodisiloxane, and octachlorotrisiloxane. 5. The method of claim 1, wherein the organosilicon precursor is an aminosilane selected from the group consisting of trisilylamine, hexamethyldisilazane, silatrane, tetrakis(dimethylamino)silane, bis(diethylamino)-silane, tris(dimethylamino)chlorosilane, and metylsilatrane. 6. The method of claim 1, wherein the organosilicon precursor is a disilane selected from the group consisting of alkoxy disilanes, alkoxy-alkyl disilanes, and alkoxy-acetoxy disilanes, consisting of compounds having the general structure where R1-R6 may be, independently, a C1-3 alkoxy group, a C1-3 alkyl group, or an acetoxy group, wherein at least one of R1-6 is an alkoxy group or an acetoxy group. 7. The method of claim 1, wherein the organosilicon precursor is a cyclic silane selected from the group consisting of octamethyl-1,4-dioxa-2,3,5,6-tetrasilacyclohexane, 1,4-dioxa-2,3,5,6-tetrasilzcyclohexane, and 1,2,3,4,5,6-hexamethoxy-1,2,3,4,5,6-hexamethylcyclohexasilane, cyclobutasilane, cyclo-pentasilane, cyclohexasilane, cycloheptasilane, and cyclooctasilane. 8. The method of claim 1, wherein the oxygen precursor is selected from the group consisting of oxygen, ozone, NO, NO2, N2O, water, peroxide, carbon monoxide and carbon dioxide. 9. The method of claim 1, wherein the organosilicon precursor, the oxygen precursor, and the at least one of the first and second radicals are reacted at a temperature of about 65° C. 10. The method of claim 1, wherein the ratio of the flow rate of the organosilicon precursor to the flow rate of the radical precursor is between about 1:1 and about 10:1. 11. The method of claim 1, wherein the radical precursor is a silicon-based radical precursor and is selected from the group consisting of (dimethylsilyl)(trimethylsilyl)methane, hexamethyldisilane, trimethylsilane, trimethylsilylchloride, tetramethylsilane, tetraethoxysilane, tetramethoxysilane, tetrakis-(trimethylsilyl)silane, (dimethylamino)dimethylsilane, dimethyldiethoxysilane, dimethyldimethoxysilane, methyltrimethoxysilane, dimethoxytetramethyl-disiloxane, tris(dimethylamino)silane, bis(dimethylamino)methylsilane, and disiloxane. 12. The method of claim 1, wherein the radical precursor is an oxygen-based radical precursor and is selected from the group consisting of oxygen, H2O, and hydrogen peroxide. 13. The method of claim 1, wherein the radical precursor is ammonia.
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이 특허에 인용된 특허 (4)
Liang, Jingmei; Ingle, Nitin K.; Venkataraman, Shankar, Formation of silicon oxide using non-carbon flowable CVD processes.
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