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Etching of silicon dioxide selectively to silicon nitride and polysilicon 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/00
출원번호 US-0168887 (1993-12-16)
발명자 / 주소
  • Barnes Michael S. (San Francisco CA) Keller John H. (Poughkeepsie NY) Holber William M. (Boston MA) Cotler Tina J. (Newburgh NY) Chapple-Sokol Jonathan D. (Poughkeepsie NY) Podlesnik Dragan (New York
출원인 / 주소
  • International Business Machines Corporation (Armonk NY 02)
인용정보 피인용 횟수 : 188  인용 특허 : 0

초록 ▼

Silicon dioxide on a substrate is directionally etched using a hydrogen halide plasma which is created within an etch chamber. The method selectively etches silicon dioxide relative to polysilicon and silicon nitride. A substrate and the combination of NH3 and NF3 gases or the combination of CF4 and

대표청구항 ▼

A method of producing a silicon dioxide free surface, comprising the steps of: placing a substrate with a silicon dioxide layer in a chamber, said substrate including an etch stop layer which is selected from the group consisting of silicon nitride and polysilicon; generating a plasma of reactive ra

이 특허를 인용한 특허 (188)

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