이 특허를 인용한 특허 (30)

1. Pascucci Luigi,ITX, Circuit for detecting the coincidence between a binary information unit stored therein and an external datum.

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2. Park,Hee Sik; Lee,Kyeong Bock; Park,Byung Soo, Flash memory device.

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3. Okazawa,Takeshi, Magnetic memory device having XP cell and Str cell in one chip.

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4. Pascucci Luigi,ITX, Method for verifying electrically programmable non-volatile memory cells of an electrically programmable non-volatile me.

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5. Kwak, Donghun, Method of programming a 3-dimensional nonvolatile memory device based on a program order of a selected page and a location of a string selection line.

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6. Lu,Qiang; Fastow,Richard; Wang,Zhigang, Method, system, and circuit for performing a memory related operation.

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7. Choi Jung-Dal,KRX, Multi-bit memory cell array of a non-volatile semiconductor memory device and method for driving the same.

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8. Choi Jung-Dal,KRX, Multi-bit memory cell array of a non-volatile semiconductor memory device and method for driving the same.

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9. Hazama,Hiroaki; Ootani,Norio, NAND type memory with dummy cells adjacent to select transistors being biased at different voltage during data erase.

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10. Gomez, Kevin Arthur; Steiner, Michael Joseph; Gaertner, Mark Allen; Goss, Ryan James, Non-volatile buffering to enable sloppy writes and fast write verification.

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11. Satori Kenichi,JPX ; Nobukata Hiromi,JPX, Non-volatile semiconductor memory device using folded bit line architecture.

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12. Arase Kenshiro,JPX, Nonvolatile memory array with NAND string memory cell groups selectively connected to sub bit lines.

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13. In,Ji hyun; Lee,Kwang yoon; Yoon,Song ho, Nonvolatile memory device and method for storing status information using multiple strings.

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14. Akira Hosogane JP, Nonvolatile semiconductor memory device capable of correctly performing erasure/programming completion determination even in presence of defective bit.

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15. Hazama,Hiroaki; Ohtani,Norio, Nonvolatile semiconductor memory device having configuration of NAND strings with dummy memory cells adjacent to select transistors.

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16. Kang,Dong Ku; Byeon,Dae Seok; Lim,Young Ho, Nonvolatile semiconductor memory device having uniform operational characteristics for memory cells.

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17. Hazama, Hiroaki; Ohtani, Norio, Nonvolatile semiconductor memory device including plural memory cells and a dummy cell coupled to an end of a memory cell.

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18. Hazama, Hiroaki; Ohtani, Norio, Nonvolatile semiconductor memory device including plural memory cells and a dummy cell coupled to an end of a memory cell.

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19. Hazama, Hiroaki; Ohtani, Norio, Nonvolatile semiconductor memory device including plural memory cells and a dummy cell coupled to an end of a memory cell.

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20. Hazama, Hiroaki; Ohtani, Norio, Nonvolatile semiconductor memory device including plural memory cells and a dummy cell coupled to an end of a memory cell.

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21. Derner, Scott; Kurth, Casey; Wald, Phillip G., ROM embedded DRAM with bias sensing.

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22. Jo, Sung Kyu; Choi, Yun Ho, Self-reference sense amplifier circuit and sensing method.

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23. Abiko, Naofumi; Yoshihara, Masahiro, Semiconductor memory device.

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24. Hwang, Soon-Wook; Park, Ki-Tae; Lee, Yeong-Taek, Semiconductor memory device.

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25. Lancaster Loren T., Semiconductor reference voltage generator having a non-volatile memory structure.

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26. Sato,Kazuo, Semiconductor storage device.

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27. Li,Kris X.; Guo,Jason; Hui,Edward S., Sense amplifier for flash memory device.

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28. Moschiano, Violante; Santin, Giovanni; Vali, Tommaso, Sensing scheme in a memory device.

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29. Lee, Jong-Ho, Simplified nonvolatile memory cell string and NAND flash memory array using the same.

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30. Terence G. W. Blake ; Bernhard H. Andresen ; Frederick G. Wall, Voltage level shifter with testable cascode devices.

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