초록 ▼

Method and apparatus are disclosed for low temperature deposition of CVD and PECVD films utilizing a gas-dispersing showerhead position within one inch of a rotating substrate. The showerhead is positioned a suitable distance below a gas-dispensing apparatus such as a steady stay flow of gas develop

Method and apparatus are disclosed for low temperature deposition of CVD and PECVD films utilizing a gas-dispersing showerhead position within one inch of a rotating substrate. The showerhead is positioned a suitable distance below a gas-dispensing apparatus such as a steady stay flow of gas develops between the ring and showerhead. A cylindrical structure extends between the gas-dispersing ring and a showerhead to contain the gas over the showerhead yielding a small boundary layer over the substrate to ensure efficient uniform deposition of a film on a substrate surface. In the one embodiment of the present invention the showerhead is bias with RF energy such that it acts as an electrode to incite a plasma proximate with the substrate for PECVD. The cylinder is isolated from the showerhead such as by a quartz insulator ring to prevent ignition of a plasma within the cylinder, or alternatively, the cylinder is fabricated of zquartz material. The RF showerhead utilizes small gas-dispersing holes to further prevent ignition of a plasma within the cylinder. The very small showerhead-to-substrate spacing and the efficient delivery of the plasma and reacting gases produces low temperature CVD and PECVD of films on the substrate.

대표청구항 ▼

An apparatus for deposition of a film on a substrate inside a chemical vapor deposition chamber comprising: a rotating susceptor to support and rotate said substrate inside said chamber, the rotating susceptor creating a pumping action toward the substrate; a gas-dispersing showerhead opposite the s

An apparatus for deposition of a film on a substrate inside a chemical vapor deposition chamber comprising: a rotating susceptor to support and rotate said substrate inside said chamber, the rotating susceptor creating a pumping action toward the substrate; a gas-dispersing showerhead opposite the susceptor and spaced about one inch or less from said susceptor and substrate and having holes to disperse reactant gases close to the rotating susceptor and said substrate so that the gases are drawn to said substrate by the susceptor pumping action; a reactant gas supply element spaced from said gas-dispersing showerhead to supply reactant gas to be dispersed from the showerhead, the supply element being located at a position sufficiently spaced from the showerhead to create a generally linear reactant gas flow between the supply element and showerhead before the reactant gases are dispersed through the showerhead; whereby to yield improved reactant gas flow over said substrate and a more efficient chemical vapor deposition of a film on said substrate.