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Method for chemical vapor deposition (CVD) with showerhead and method thereof 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/00
출원번호 US-0436727 (2006-05-17)
등록번호 US-7479303 (2009-01-20)
우선권정보 KR-2005-41910(2005-05-19); KR-2006-27444(2006-03-27)
발명자 / 주소
  • Byun,Chul Soo
출원인 / 주소
  • Piezonica Co., Ltd.
대리인 / 주소
    Sheridan Ross P.C.
인용정보 피인용 횟수 : 31  인용 특허 : 6

초록

Disclosed is a method of chemical vapor deposition (CVD). The method provides for use of a showerhead through which a source material gas including a reactive gas of at least one kind and a purge gas is injected over a substrate located in a reaction chamber to deposit a film on the substrate. The

대표청구항

What is claimed is: 1. A method of chemical vapor deposition (CVD) comprising: providing a showerhead through which a source material gas including a reactive gas of at least one kind and a purge gas is injected over a substrate located in a reaction chamber to deposit a film on the substrate, wher

이 특허에 인용된 특허 (6)

  1. Mardian,Allen P.; Campbell,Philip H.; Carpenter,Craig M.; Mercil,Randy W.; Sharan,Sujit, Chemical vapor deposition method.
  2. Lei Lawrence C. (Milpitas CA) Leung Cissy (Fremont CA), Controlling edge deposition on semiconductor substrates.
  3. McInerney Edward J. ; Pratt Thomas M. ; Hancock Shawn D., Isolation of incompatible processes in a multi-station processing chamber.
  4. Byun,Chulsoo, Method and apparatus for chemical vapor deposition capable of preventing contamination and enhancing film growth rate.
  5. Yun-sook Chae KR; In-sang Jeon KR; Sang-bom Kang KR; Sang-in Lee KR; Kyu-wan Ryu KR, Method of delivering gas into reaction chamber and shower head used to deliver gas.
  6. Nguyen Tue ; Bercaw Craig Alan, Multi-thermal zone shielding apparatus.

이 특허를 인용한 특허 (31)

  1. Kang, Sean; Ko, Jungmin; Luere, Oliver, Airgap formation with damage-free copper.
  2. Sung, Edward; Smith, Colin F.; Hamilton, Shawn M., Anti-transient showerhead.
  3. Byun, Chul Soo, Apparatus for chemical vapor deposition (CVD) with showerhead.
  4. Byun, Chul Soo; Han, Man Cheol, Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof.
  5. Byun, Chul Soo; Han, Man Cheol, Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof.
  6. Byun, Chul Soo; Han, Man Cheol, Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof.
  7. Benjaminson, David; Lubomirsky, Dmitry; Math, Ananda Seelavanth; Natarajan, Saravanakumar; Chourey, Shubham, Bolted wafer chuck thermal management systems and methods for wafer processing systems.
  8. Lubomirsky, Dmitry, Chamber with flow-through source.
  9. Silva, Hugo; Jouault, Nico; Saywell, Victor; Crawley, Fred; Dauelsberg, Martin; Lindner, Johannes, Gas inlet member of a CVD reactor.
  10. Mitrovic, Bojan; Gurary, Alex; Armour, Eric A., Gas treatment systems.
  11. Mitrovic, Bojan; Gurary, Alex; Armour, Eric A., Gas treatment systems.
  12. Mitrovic, Bojan; Gurary, Alex; Armour, Eric A., Gas treatment systems.
  13. Korolik, Mikhail; Ingle, Nitin; Kioussis, Dimitri, Germanium etching systems and methods.
  14. Moshtagh, Vahid S.; Ramer, Jeffrey C., Machine CVD shower head.
  15. Chao, Ben-Son; Chang, Yu-Feng; Chen, Yen-Si, Method of making showerhead for semiconductor processing apparatus.
  16. Li, Zihui; Kao, Chia-Ling; Wang, Anchuan; Ingle, Nitin K., Methods for anisotropic control of selective silicon removal.
  17. Song, Eddy J., Multi-gas centrally cooled showerhead design.
  18. Chandrasekharan, Ramesh; Petraglia, Jennifer L., Multi-plenum, dual-temperature showerhead.
  19. Lubomirsky, Dmitry, Oxygen compatible plasma source.
  20. Lubomirsky, Dmitry, Plasma processing system with direct outlet toroidal plasma source.
  21. Choi, Tom; Ko, Jungmin; Kang, Sean, Poly directional etch by oxidation.
  22. Xu, Lin; Chen, Zhijun; Huang, Jiayin; Wang, Anchuan, Removal methods for high aspect ratio structures.
  23. Wang, Xikun; Lei, Jianxin; Ingle, Nitin; Shaviv, Roey, Selective cobalt removal for bottom up gapfill.
  24. Wang, Xikun; Ingle, Nitin, Selective in situ cobalt residue removal.
  25. Wang, Xikun; Ingle, Nitin, Selective tungsten removal.
  26. Arnepalli, Ranga Rao; Goradia, Prerna Sonthalia; Visser, Robert Jan; Ingle, Nitin; Korolik, Mikhail; Biswas, Jayeeta; Lodha, Saurabh, Self-limiting atomic thermal etching systems and methods.
  27. Lubomirsky, Dmitry; Chen, Xinglong; Venkataraman, Shankar, Semiconductor processing systems having multiple plasma configurations.
  28. Yang, Jang-Gyoo; Chen, Xinglong; Park, Soonam; Baek, Jonghoon; Garg, Saurabh; Venkataraman, Shankar, Semiconductor processing with DC assisted RF power for improved control.
  29. Kim, Changsung Sean; Hong, Jong Pa; Lee, Kyung Ho, Showerhead for chemical vapor deposition and chemical vapor deposition apparatus having the same.
  30. Ko, Jungmin; Choi, Tom; Ingle, Nitin; Kim, Kwang-Soo; Wou, Theodore, SiN spacer profile patterning.
  31. Huang, Jiayin; Chen, Zhijun; Wang, Anchuan; Ingle, Nitin, Silicon pretreatment for nitride removal.
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