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[미국특허] Semiconductor device having a passivation layer 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-031/0312
  • H01L-023/58
출원번호 US-0678458 (1996-07-09)
발명자 / 주소
  • Harris Christopher,SEX
출원인 / 주소
  • ABB Research Ltd., CHX
대리인 / 주소
    Pollock, Vande Sande & Priddy
인용정보 피인용 횟수 : 67  인용 특허 : 5

초록 ▼

A semiconductor device comprising at least one SiC semiconductor layer; and passivation layers applied on at least a portion of a surface of the SiC semiconductor layer for passivation thereof; the passivation layers comprising at least a substantially insulating layer comprising crystalline AlN and

대표청구항 ▼

[ I claim:] [1.] A semiconductor device comprisingat least one SiC semiconductor layer, andpassivation layers applied on at least a portion of a surface of said SiC semiconductor layer for passivation thereof,said passivation layers comprising at least a substantially insulating layer comprising cry

이 특허에 인용된 특허 (5)

  1. Edmond John A. (Apex NC) Dmitriev Vladimir (Fuquay-Varina NC) Irvine Kenneth (Cary NC), Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices.
    상세보기
  2. Suzuki Akira (Nara JPX) Furukawa Katsuki (Sakai JPX) Shigeta Mitsuhiro (Joyo JPX) Fujii Yoshihisa (Nara JPX), Light emitting diode.
    상세보기
  3. Byatt Stephen W. (Manchester GB2), Method of passivating pn-junction in a semiconductor device.
    상세보기
  4. Biet ; Jean-Pierre Henri ; Laou ; Sio Dhat, Semiconductor device having a passivated surface and method of manufacturing the device.
    상세보기
  5. Harris Christopher (Sollentuna SEX) Konstantinov Andrei (Linkoping SEX) Janzen Erik (Borensberg SEX), Semiconductor device having a passivation layer.
    상세보기

이 특허를 인용한 특허 (67)

  1. Hunter Charles Eric, Bulk single crystals of aluminum nitride.
    상세보기
  2. Henning, Jason Patrick; Zhang, Qingchun; Ryu, Sei-Hyung; Agarwal, Anant; Palmour, John Williams; Allen, Scott, Edge termination structure employing recesses for edge termination elements.
    상세보기
  3. Schulten Michael,DEX, Electrically poorly conductive material for producing an insulation sleeve.
    상세보기
  4. Ryu, Sei-Hyung; Capell, Doyle Craig; Cheng, Lin; Dhar, Sarit; Jonas, Charlotte; Agarwal, Anant; Palmour, John, Field effect transistor devices with low source resistance.
    상세보기
  5. Ryu, Sei-Hyung; Capell, Doyle Craig; Cheng, Lin; Dhar, Sarit; Jonas, Charlotte; Agarwal, Anant; Palmour, John, Field effect transistor devices with low source resistance.
    상세보기
  6. Dhar, Sarit; Ryu, Sei-Hyung; Agarwal, Anant; Williams, John Robert, Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions.
    상세보기
  7. Zhang, Qingchun, High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability.
    상세보기
  8. Das, Mrinal K.; Lin, Henry; Schupbach, Marcelo; Palmour, John Williams, High current, low switching loss SiC power module.
    상세보기
  9. Das, Mrinal K.; Lin, Henry; Schupbach, Marcelo; Palmour, John Williams, High current, low switching loss SiC power module.
    상세보기
  10. Das, Mrinal K.; Callanan, Robert J.; Lin, Henry; Palmour, John Williams, High performance power module.
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  11. Zhang, Qingchun; Ryu, Sei-Hyung; Jonas, Charlotte; Agarwal, Anant K., High power insulated gate bipolar transistors.
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  12. Zhang, Qingchun; Ryu, Sei-Hyung; Jonas, Charlotte; Agarwal, Anant K., High power insulated gate bipolar transistors.
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  13. Ryu, Sei-Hyung; Zhang, Qingchun, High voltage insulated gate bipolar transistors with minority carrier diverter.
    상세보기
  14. Ryu,Sei Hyung; Jenny,Jason R.; Das,Mrinal K.; Hobgood,Hudson McDonald; Agarwal,Anant K.; Palmour,John W., High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities.
    상세보기
  15. Ryu, Sei Hyung; Jenny, Jason R.; Das, Mrinal K.; Agarwal, Anant K.; Palmour, John W.; Hobgood, Hudson McDonald, High voltage silicon carbide devices having bi-directional blocking capabilities.
    상세보기
  16. Ryu,Sei Hyung; Jenny,Jason R.; Das,Mrinal K.; Hobgood,Hudson McDonald; Agarwal,Anant K.; Palmour,John W., High voltage silicon carbide devices having bi-directional blocking capabilities.
    상세보기
  17. Das, Mrinal Kanti; Lipkin, Lori A.; Palmour, John W.; Sheppard, Scott; Hagleitner, Helmut, High voltage, high temperature capacitor and interconnection structures.
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  18. Zhang, Qingchun, Insulated gate bipolar transistors including current suppressing layers.
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  19. Zhang, Qingchun, Insulated gate bipolar transistors including current suppressing layers.
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  20. Zhang, Qingchun; Ryu, Sei-Hyung, Junction Barrier Schottky diodes with current surge capability.
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  21. Lipkin Lori A. ; Palmour John Williams, Layered dielectric on silicon carbide semiconductor structures.
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  22. Lipkin, Lori A.; Paimour, John Williams, Layered dielectric on silicon carbide semiconductor structures.
    상세보기
  23. Lori A. Lipkin ; John Williams Paimour, Layered dielectric on silicon carbide semiconductor structures.
    상세보기
  24. Lipkin, Lori A., Method of N2O annealing an oxide layer on a silicon carbide layer.
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  25. Lipkin, Lori A.; Das, Mrinal Kanti; Palmour, John W., Method of N2O growth of an oxide layer on a silicon carbide layer.
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  26. Das,Mrinal Kanti; Lipkin,Lori A., Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment.
    상세보기
  27. Tsuji, Takashi, Method of manufacturing silicon carbide semiconductor device.
    상세보기
  28. Tsuji,Takashi, Method of manufacturing silicon carbide semiconductor device.
    상세보기
  29. Das,Mrinal Kanti; Lipkin,Lori A.; Palmour,John W.; Sheppard,Scott; Hagleitner,Helmut, Methods of fabricating high voltage, high temperature capacitor and interconnection structures.
    상세보기
  30. Das, Mrinal K.; Laughner, Michael, Methods of fabricating silicon carbide devices having smooth channels.
    상세보기
  31. Das, Mrinal K.; Laughner, Michael, Methods of fabricating silicon carbide devices having smooth channels.
    상세보기
  32. Das,Mrinal Kanti; Ryu,Sei Hyung, Methods of fabricating silicon carbide devices with hybrid well regions.
    상세보기
  33. Das, Mrinal K.; Hull, Brett; Krishnaswami, Sumi, Methods of forming SiC MOSFETs with high inversion layer mobility.
    상세보기
  34. Das, Mrinal K.; Hull, Brett; Krishnaswami, Sumi, Methods of forming SiC MOSFETs with high inversion layer mobility.
    상세보기
  35. Hull, Brett Adam; Zhang, Qingchun, Methods of forming semiconductor devices including epitaxial layers and related structures.
    상세보기
  36. Das,Mrinal Kanti; Saxler,Adam William, Nitrogen passivation of interface states in SiO/SiC structures.
    상세보기
  37. Henning, Jason Patrick; Zhang, Qingchun; Ryu, Sei-Hyung; Agarwal, Anant Kumar; Palmour, John Williams; Allen, Scott, Power module for supporting high current densities.
    상세보기
  38. Henning, Jason Patrick; Zhang, Qingchun; Ryu, Sei-Hyung; Agarwal, Anant Kumar; Palmour, John Williams; Allen, Scott, Power module having a switch module for supporting high current densities.
    상세보기
  39. Zhang, Qingchun; Richmond, James Theodore; Agarwal, Anant K.; Ryu, Sei-Hyung, Power switching devices having controllable surge current capabilities.
    상세보기
  40. Ryu, Sei-Hyung; Agarwal, Anant; Das, Mrinal Kanti; Lipkin, Lori A.; Palmour, John W.; Singh, Ranbir, SILICON CARBIDE POWER METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS HAVING A SHORTING CHANNEL AND METHODS OF FABRICATING SILICON CARBIDE METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS HAVING.
    상세보기
  41. Henning, Jason Patrick; Zhang, Qingchun; Ryu, Sei-Hyung; Agarwal, Anant Kumar; Palmour, John Williams; Allen, Scott, Schottky diode.
    상세보기
  42. Henning, Jason Patrick; Zhang, Qingchun; Ryu, Sei-Hyung; Agarwal, Anant Kumar; Palmour, John Williams; Allen, Scott, Schottky diode.
    상세보기
  43. Henning, Jason Patrick; Zhang, Qingchun; Ryu, Sei-Hyung; Agarwal, Anant; Palmour, John Williams; Allen, Scott, Schottky diode.
    상세보기
  44. Henning, Jason Patrick; Zhang, Qingchun; Ryu, Sei-Hyung; Agarwal, Anant; Palmour, John Williams; Allen, Scott, Schottky diode employing recesses for elements of junction barrier array.
    상세보기
  45. Zhang, Qingchun; Ryu, Sei-Hyung; Agarwal, Anant, Semiconductor devices including Schottky diodes having doped regions arranged as islands and methods of fabricating same.
    상세보기
  46. Hull, Brett Adam; Zhang, Qingchun, Semiconductor devices including epitaxial layers and related methods.
    상세보기
  47. Zhang, Qingchun; Henning, Jason, Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same.
    상세보기
  48. Zhang, Qingchun, Semiconductor devices with heterojunction barrier regions and methods of fabricating same.
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  49. Zhang, Qingchun, Semiconductor devices with heterojunction barrier regions and methods of fabricating same.
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  50. Zhang, Qingchun, Semiconductor devices with heterojunction barrier regions and methods of fabricating same.
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  51. Zhang, Qingchun, Semiconductor devices with heterojunction barrier regions and methods of fabricating same.
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  52. Bakowski Mietek,SEX ; Gustafsson Ulf,SEX ; Harris Christopher I.,SEX, SiC semiconductor device comprising a pn junction.
    상세보기
  53. Ryu, Sei-Hyung, Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same.
    상세보기
  54. Das, Mrinal K.; Laughner, Michael, Silicon carbide devices having smooth channels.
    상세보기
  55. Das, Mrinal K.; Laughner, Michael, Silicon carbide devices having smooth channels.
    상세보기
  56. Das, Mrinal Kanti; Ryu, Sei-Hyung, Silicon carbide devices with hybrid well regions.
    상세보기
  57. Ryu, Sei-Hyung; Agarwal, Anant K., Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection.
    상세보기
  58. Ryu,Sei Hyung, Silicon carbide power devices with self-aligned source and well regions.
    상세보기
  59. Ryu,Sei Hyung, Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same.
    상세보기
  60. Chidambarrao, Dureseti; Dokumaci, Omer H.; Gluschenkov, Oleg, Silicon device on SI:C-OI and SGOI and method of manufacture.
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  61. Chidambarrao, Duresti; Dokumaci, Omer H.; Gluschenkov, Oleg G., Silicon device on Si: C-oi and Sgoi and method of manufacture.
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  62. Chidambarrao, Dureseti; Dokumaci, Omer H.; Gluschenkov, Oleg G., Silicon device on Si:C-OI and SGOI and method of manufacture.
    상세보기
  63. Callanan, Robert J.; Ryu, Sei-Hyung; Zhang, Qingchun, Solid-state pinch off thyristor circuits.
    상세보기
  64. Ryu, Sei-Hyung, Vertical JFET limited silicon carbide metal-oxide semiconductor field effect transistors.
    상세보기
  65. Ryu,Sei Hyung, Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors.
    상세보기
  66. Zhang, Qingchun, Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices.
    상세보기
  67. Zhang, Qingchun; Richmond, James Theodore; Callanan, Robert J., Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits.
    상세보기

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