초록 ▼

An attenuated phase shift mask comprises a first layer having a thickness to provide a transmission in the range of about 3 to 10% formed on a transparent substrate and a second layer comprising a transparent material having a thickness to provide a desired phase shift, formed on said first layer. F

An attenuated phase shift mask comprises a first layer having a thickness to provide a transmission in the range of about 3 to 10% formed on a transparent substrate and a second layer comprising a transparent material having a thickness to provide a desired phase shift, formed on said first layer. For a phase shift of 180.degree. and i-line wavelength (365 nm) where chromium is used as the first layer, then a thickness within the range of about 25 to 75 nm is employed; where silicon dioxide is used as the second layer; then a thickness of about 400 to 450 nm is employed. While the oxide may be dry-etched, an isotropic wet etch provides superior aerial images.

대표청구항 ▼

[ What is claimed is:] [1.] An attenuated phase shift mask comprising a first layer having a thickness to provide a transmission in the range of about 3 to 10% formed on a transparent substrate and a second layer comprising a transparent material having a thickness to provide a desired phase shift a

[ What is claimed is:] [1.] An attenuated phase shift mask comprising a first layer having a thickness to provide a transmission in the range of about 3 to 10% formed on a transparent substrate and a second layer comprising a transparent material having a thickness to provide a desired phase shift and formed on said first layer, said second layer having at least one opening etched therein defined by substantially parabolically profiled walls each said opening also being etched through said first layer.