초록 ▼

A method for improving the interface between a silicon nitride film and a silicon surface is described. According to the present invention a silicon nitride film is formed on a silicon surface of a substrate. While said substrate is heated the silicon nitride film is exposed to an ambient comprising

A method for improving the interface between a silicon nitride film and a silicon surface is described. According to the present invention a silicon nitride film is formed on a silicon surface of a substrate. While said substrate is heated the silicon nitride film is exposed to an ambient comprising hydrogen (H.sub.2). In a prefered embodiment of the present invention the ambient comprises H.sub.2 and N.sub.2.

대표청구항 ▼

[ We claim:] [18.] A method of forming a stacked capacitor on a substrate comprising:forming a silicon nitride layer having a thickness between 10-25 .ANG. on a doped polysilicon bottom electrode of a substrate;heating said substrate to a temperature between 700-850.degree. C.;while heating said sub

[ We claim:] [18.] A method of forming a stacked capacitor on a substrate comprising:forming a silicon nitride layer having a thickness between 10-25 .ANG. on a doped polysilicon bottom electrode of a substrate;heating said substrate to a temperature between 700-850.degree. C.;while heating said substrate, exposing said silicon nitride layer to an ambient consisting of hydrogen (H.sub.2) and nitrogen (N.sub.2) wherein said ambient has less than 10% H.sub.2 and more than 90% N.sub.2 by volume;forming a transition metal oxide dielectric on said ambient exposed silicon nitride layer;annealing said transition metal oxide dielectric layer; andforming the top capacitor electrode over said transition metal oxide dielectric.