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Wafer edge deplater for chemical mechanical polishing of substrates 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C30B-030/02
출원번호 US-0090736 (1998-06-04)
발명자 / 주소
  • Uzoh Cyprian Emeka
출원인 / 주소
  • International Business Machines Corporation
대리인 / 주소
    Pollock, Vande Sande & Amernick
인용정보 피인용 횟수 : 45  인용 특허 : 21

초록

A device for electrochemically deplating metal from side edges and a backside of a semiconductor wafer or substrate. The device includes a shaped cathode having a shape substantially corresponding to a shape of at least a portion of the semiconductor wafer, such that the shaped cathode at least part

대표청구항

[ We claim:] [1.] A device for electrochemically deplating metal from side edges and a backside of a semiconductor wafer, comprising:a shaped cathode having a shape substantially corresponding to a shape of at least a portion of the semiconductor wafer, such that the shaped cathode surrounds at leas

이 특허에 인용된 특허 (21)

  1. Cote William J. (Poughquag NY) Ryan James G. (Newtown CT) Okumura Katsuya (Poughkeepsie NY) Yano Hiroyuki (Wappingers Falls NY), Apparatus for processing semiconductor wafers.
  2. Yu Chris C. (Boise ID) Sandhu Gurtej S. (Boise ID), Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection.
  3. Burke Peter A. (Austin TX) Freeman Eric H. (Underhill Center VT) Ross Gilbert H. (Burlington VT), Chemical-mechanical polishing tool with end point measurement station.
  4. Tsai Chia S. (Hsin-chu TWX) Tseng Pin-Nan (Hsin-chu TWX), Chemical/mechanical planarization (CMP) apparatus and polish method.
  5. Duane Diana C. (Cedar Park TX) Zilley Eric L. (St. Paul MN) Jordan Robert C. (White Bear Lake MN), Copper/epoxy structures.
  6. Braren Bodil E. (Hartsdale NY) Brown Karen H. (Yorktown Heights NY) Perry Kathleen A. (West Hills CA) Srinivasan Rangaswamy (Yorktown Heights NY) Sugerman Alvin (Hopewell Junction NY), Deposition method for high aspect ratio features using photoablation.
  7. Datta Madhav (Yorktown Heights NY) O\Toole Terrence R. (Webster NY), Electrochemical metal removal technique for planarization of surfaces.
  8. Datta Madhav (Yorktown Heights NY) Romankiw Lubomyr T. (Briarcliff Manor NY), Electrochemical tool for uniform metal removal during electropolishing.
  9. Datta Madhav (Yorktown Heights NY) Shenoy Ravindra V. (Peekskill NY), Electroetching method and apparatus.
  10. Kaanta Carter W. (Colchester VT) Leach Michael A. (Bristol VT), In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection.
  11. Kordonsky William I. (Minsk BYX) Prokhorov Igor V. (Minsk BYX) Gorodkin Sergei R. (Minsk BYX) Gorodkin Gennadii R. (Minsk BYX) Gleb Leonid K. (Minsk BYX) Kashevsky Bronislav E. (Minsk BYX), Magnetorheological polishing devices and methods.
  12. Mayer Steven T. (Piedmont CA) Contolini Robert J. (Pleasanton CA) Bernhardt Anthony F. (Berkeley CA), Method and apparatus for spatially uniform electropolishing and electrolytic etching.
  13. Kato Koji (3-16-8 Yagiyamaminami Sendai City ; Miyagi Prefecture JPX) Umehara Noritsugu (Sendai JPX) Adachi Shigeru (Izumi JPX) Sato Shin (Natori JPX), Method for grinding using a magnetic fluid and an apparatus thereof.
  14. Yu Chris C. (Boise ID) Doan Trung T. (Boise ID), Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing.
  15. Malik Farid A. (Beaverton OR), Post-polish cleaning of oxidized substrates by reverse colloidation.
  16. Cote William J. (Poughquag NY) Lee Pei-Ing P. (Williston VT) Sandwick Thomas E. (Hopewell Junction NY) Vollmer Bernd M. (Wappingers Falls NY) Vynorius Victor (Pleasant Valley NY) Wolff Stuart H. (Tul, Refractory metal capped low resistivity metal conductor lines and vias.
  17. Joshi Rajiv V. (Yorktown Heights NY) Cuomo Jerome J. (Lincolndale NY) Dalal Hormazdyar M. (Milton NY) Hsu Louis L. (Fishkill NY), Refractory metal capped low resistivity metal conductor lines and vias.
  18. Contolini Robert J. (Pleasanton CA) Mayer Steven T. (San Leandro CA) Tarte Lisa A. (Livermore CA), Removal of field and embedded metal by spin spray etching.
  19. Poris Jaime (409 Capitola Ave. Capitola CA 95010), Selective metal electrodeposition process.
  20. Leach Michael A. (Bristol VT) Paulsen James K. (Jericho VT) Machesney Brian J. (Burlington VT) Venditti Daniel J. (Essex Junction VT) Whitaker Christopher R. (Jericho VT), System for mechanical planarization.
  21. Carey David H. (Austin TX) Pietila Douglass A. (Puyallup WA) Sigmond David M. (Austin TX), Trenching techniques for forming channels, vias and components in substrates.

이 특허를 인용한 특허 (45)

  1. Kaufman Robert ; Downes Gary C., Apparatus and method for plating wafers, substrates and other articles.
  2. Talieh Homayoun ; Basol Bulent, Apparatus for forming an electrical contact with a semiconductor substrate.
  3. Robert Kaufman ; Gary C. Downes, Apparatus for plating wafers, substrates and other articles.
  4. Körtvelyessy, Daniel; Reiche, Ralph; Steinbach, Jan; de Vogelaere, Marc, Device and method for removing surface areas of a component.
  5. Ashjaee, Jalal; Volodarsky, Rimma; Uzoh, Cyprian E.; Basol, Bulent M.; Talieh, Homayoun, Edge and bevel cleaning process and system.
  6. Ashjaee,Jalal; Volodarsky,Rimma; Uzoh,Cyprian E.; Basol,Bulent M.; Talieh,Homayoun, Edge and bevel cleaning process and system.
  7. Yahalom, Joseph; Gandikota, Srinivas; McGuirk, Christopher R.; Padhi, Deenesh, Electro-chemical polishing apparatus.
  8. Basol, Bulent M., Electrochemical edge and bevel cleaning process and system.
  9. Basol,Bulent M., Electrochemical edge and bevel cleaning process and system.
  10. Basol, Bulent M.; Talieh, Homayoun, Electropolishing system and process.
  11. Huang, Chen-Ming; Yang, Sen-Shan, Local electrochemical deplating of alignment mark regions of semiconductor wafers.
  12. Emesh, Ismail; Chadda, Saket; Korovin, Nikolay N.; Mueller, Brian L., Method and apparatus for electrochemical planarization of a workpiece.
  13. Emesh, Ismail; Chadda, Saket; Korovin, Nikolay N.; Mueller, Brian L., Method and apparatus for electrochemical planarization of a workpiece.
  14. Emesh, Ismail; Chadda, Saket; Korovin, Nikolay N; Mueller, Brian L, Method and apparatus for electrochemical planarization of a workpiece.
  15. Saket Chadda ; Chris Barns, Method and apparatus for electrochemical planarization of a workpiece.
  16. Wang,Hui, Method and apparatus for end-point detection.
  17. Talieh, Homayoun; Basol, Bulent, Method and apparatus for forming an electrical contact with a semiconductor substrate.
  18. Talieh,Homayoun; Basol,Bulent, Method and apparatus for forming an electrical contact with a semiconductor substrate.
  19. Mayer, Steven T.; Drewery, John S., Method and apparatus for uniform electropolishing of damascene IC structures by selective agitation.
  20. Mayer, Steven T.; Contolini, Robert J.; Broadbent, Eliot K.; Drewery, John S., Method and apparatus for uniform electropolishing of damascene ic structures by selective agitation.
  21. Reid, Jonathan David, Method for electrochemical planarization of metal surfaces.
  22. Hui Wang, Method for electropolishing metal on semiconductor devices.
  23. Homayoun Talieh ; Bulent Basol, Method for forming an electrical contact with a semiconductor substrate.
  24. Mayer,Steven T.; Reid,Jonathan D.; Rea,Mark L.; Emesh,Ismail T.; Meinhold,Henner W.; Drewery,John S., Method for planar electroplating.
  25. Jabado, Rene; Jensen, Jens Dahl; Krüger, Ursus; Körtvelyessy, Daniel; Lüthen, Volkmar; Reiche, Ralph; Rindler, Michael; Ullrich, Raymond, Method for producing a wear layer.
  26. Gramarossa, Daniel J.; Downes, Gary C., Method of processing and plating planar articles.
  27. Gramarossa, Daniel J.; Downes, Gary C., Method of processing wafers and other planar articles within a processing cell.
  28. Sergey Lopatin ; Richard J. Huang, Method of re-working copper damascene wafers.
  29. Reid, Jonathan; Varadarajan, Sesha; Emekli, Ugur, Methods and apparatus for depositing copper on tungsten.
  30. Reid, Jonathan; Varadarajan, Sesha; Emekli, Ugur, Methods and apparatus for depositing copper on tungsten.
  31. Hui Wang, Methods and apparatus for electropolishing metal interconnections on semiconductor devices.
  32. Wang, Hui, Methods and apparatus for electropolishing metal interconnections on semiconductor devices.
  33. Mayer, Steven T.; Porter, David W., Modulated metal removal using localized wet etching.
  34. Sendai, Satoshi; Tomioka, Kenya; Tsuda, Katsumi, Plating apparatus and plating liquid removing method.
  35. Sendai,Satoshi; Tomioka,Kenya; Tsuda,Katsumi, Plating apparatus and plating liquid removing method.
  36. Yezdi Dordi ; Michael Sugarman, Process sequence for improved seed layer productivity and achieving 3mm edge exclusion for a copper metalization process on semiconductor wafer.
  37. Mayer, Steven T.; Drewery, John S.; Hill, Richard S.; Archer, Timothy M.; Kepten, Avishai, Selective electrochemical accelerator removal.
  38. Mayer, Steven T.; Drewery, John; Hill, Richard S.; Archer, Timothy; Kepten, Avishai, Selective electrochemical accelerator removal.
  39. Mayer, Steven T.; Stowell, Marshall R.; Drewery, John S.; Hill, Richard S.; Archer, Timothy M.; Kepten, Avishai, Selective electrochemical accelerator removal.
  40. Ching, Kai-Ming; Pan, Sheng-Liang; Chang, Hao-Wei; Chang, Chun-Hong; Chen, Yen-Ming, Selective electroplating method employing annular edge ring cathode electrode contact.
  41. Basol,Bulent M.; Ashjaee,Jalal; Govzman,Boris; Talieh,Homayoun; Frey,Bernard M., System for electropolishing and electrochemical mechanical polishing.
  42. Mayer, Steven T.; Rea, Mark L.; Hill, Richard S.; Kepten, Avishai; Stowell, R. Marshall; Webb, Eric G., Topography reduction and control by selective accelerator removal.
  43. Mayer, Steven T.; Rea, Mark L.; Hill, Richard S.; Kepten, Avishai; Stowell, R. Marshall; Webb, Eric G., Topography reduction and control by selective accelerator removal.
  44. Hongo,Akihisa; Morisawa,Shinya, Wafer cleaning apparatus.
  45. Marquardt, David, Wear ring assembly.
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