초록 ▼

A sputtering device includes a chamber equipped with an exhaust system. A sputtering power source applies specific high frequency electric power to the target. A supplemental electrode is provided so that it surrounds the flight path of sputter particles between the target and a substrate. The suppl

A sputtering device includes a chamber equipped with an exhaust system. A sputtering power source applies specific high frequency electric power to the target. A supplemental electrode is provided so that it surrounds the flight path of sputter particles between the target and a substrate. The supplemental electrode is either maintained at a floating potential so that it is capacitively coupled with the target to which high frequency electric power has been applied, in addition, high frequency electric power of the same frequency may be applied directly to the supplemental electrode. A plasma P' is formed on the inside of the supplemental electrode, and the sputter particles released from the target are ionized. An extraction-use electric field is set up by an electric field establishment means, and is directed perpendicularly to the substrate. This construction and its associated method allow a film to be formed with good bottom coverage on the inner surfaces of holes whose aspect ratio is over 4.

대표청구항 ▼

[ What is claimed is:] [12.] A method of sputtering a substrate held by a substrate holder within a sputter chamber comprising the steps of:applying high-frequency electric power to a target thereby magnetron sputtering the target and creating sputter particles;holding a substrate in an incident pos

[ What is claimed is:] [12.] A method of sputtering a substrate held by a substrate holder within a sputter chamber comprising the steps of:applying high-frequency electric power to a target thereby magnetron sputtering the target and creating sputter particles;holding a substrate in an incident position facing the target;surrounding a flight path of the sputter particles between the target and the substrate with a supplemental electrode; andforming a capacitively coupled supplemental plasma toward the inside of the supplemental electrode by capacitively coupling the supplemental electrode to the target.