초록 ▼

In one embodiment, a method of forming a barrier layer for contacting a metal interconnect layer to one or more exposed N and P type silicon regions on a wafer. The wafer is heated with a direct radiation source, such as a lamp. To equalize the differing emissivities of the N type and P type silicon

In one embodiment, a method of forming a barrier layer for contacting a metal interconnect layer to one or more exposed N and P type silicon regions on a wafer. The wafer is heated with a direct radiation source, such as a lamp. To equalize the differing emissivities of the N type and P type silicon regions, an opaque layer of refractory metal is first formed on the regions at a temperature below approximately 100.degree. C. A refractory metal deposition process is then conducted at temperatures between 230.degree. C.-425.degree. C. During this higher temperature deposition process, the reducing gas is ramped up with time to increase the deposition rate of the refractory metal as the exothermic reducing reactions increasingly heat the contact areas. Other process and apparatus features enable higher bonding strength between the silicon surface and the formed barrier layer contacting the silicon surface and enable a higher purity content of the processing gases as well as improved diffusion of processing gases when injected into the processing chamber.

대표청구항 ▼

[ What is claimed is:] [1.] A structure for controlling gases prior to said gases being allowed to enter a CVD chamber, said structure comprising:one or more input ports connected to one or more sources of said process gases;a first valve connected downstream from each of said one or more input port

[ What is claimed is:] [1.] A structure for controlling gases prior to said gases being allowed to enter a CVD chamber, said structure comprising:one or more input ports connected to one or more sources of said process gases;a first valve connected downstream from each of said one or more input ports for coupling said one or more input ports to a respective first section of a gas line;a second valve connected downstream from each first valve for coupling said respective first section of said gas line to a second section of said gas line;a filter connected between said first valve and said CVD chamber;a third valve, connected downstream from each first valve, connecting said gas line to a vacuum source such that gas may be flowed through said gas line at a desired rate without flowing into said CVD chamber; anda fourth valve adapted to connect said gas line to a source of purging gas, such that said gas line may be purged with an inert gas.