초록 ▼

A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes, with an efficient sputtering inert gas, such as Ar, replaced or reduced with an He inefficient sputtering inert gas such as He. By reducing the sputtering component, sidewall deposi

A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes, with an efficient sputtering inert gas, such as Ar, replaced or reduced with an He inefficient sputtering inert gas such as He. By reducing the sputtering component, sidewall deposition from the sputtered material is reduced. Consequently, gaps with aspect ratios of 6.0:1 and higher can be filled without the formation of voids and without damaging circuit elements.

대표청구항 ▼

1. A process for filling gaps during integrated circuit production, comprising: providing a gas mixture comprised of silicon-containing and oxygen-containing components and consisting of one inert component, wherein said inert component is helium; and depositing a film over said gaps by using said

1. A process for filling gaps during integrated circuit production, comprising: providing a gas mixture comprised of silicon-containing and oxygen-containing components and consisting of one inert component, wherein said inert component is helium; and depositing a film over said gaps by using said gas mixture for simultaneous CVD and sputter etching using a plasma of uniform plasma density.