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The laser heat treatment of an amorphous or polycrystalline silicon film material is conducted by forming a laser beam generated from a pulse laser source having a wavelength of 350 nm to 800 nm into a linear beam having a width and a length, and directing the linear beam onto a film material formed

The laser heat treatment of an amorphous or polycrystalline silicon film material is conducted by forming a laser beam generated from a pulse laser source having a wavelength of 350 nm to 800 nm into a linear beam having a width and a length, and directing the linear beam onto a film material formed on a substrate.

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1. A laser heat treatment method comprising the steps of: forming a laser beam generated from a pulse laser source having a wavelength of 350 nm to 800 nm into a linear beam having a width and a length; and directing said linear beam onto a film material formed on a substrate, wherein said linea

1. A laser heat treatment method comprising the steps of: forming a laser beam generated from a pulse laser source having a wavelength of 350 nm to 800 nm into a linear beam having a width and a length; and directing said linear beam onto a film material formed on a substrate, wherein said linear beam has an energy density gradient of at least 3 mJ/cm2/μm in a width direction thereof. 2. The laser heat treatment method according to claim 1, wherein an energy density distribution in the width direction of said linear beam is an approximately Gaussian distribution profile. 3. The laser heat treatment method according to claim 1, wherein an energy density distribution in the width direction of said linear beam has an approximately top-flat profile. 4. The laser heat treatment method according to claim 1, wherein an energy density distribution in a length direction of said linear beam has an approximately top-flat profile of which standard deviation is at most 0.3 provided that an average intensity of a flat portion is 1. 5. The laser heat treatment method according to claim 1, wherein said pulse laser source is a harmonic of Q-switched oscillating solid-state laser using Nd ion- or Yb ion-doped crystal or glass as an excitation medium. 6. The laser heat treatment method according to claim 5, wherein said pulse laser source is one selected from the group consisting of a second harmonic of Nd:YAG laser, a third harmonic of Nd:YAG laser, a second harmonic of Nd:glass laser, a third harmonic of Nd:glass laser, a second harmonic of Nd:YLF laser, a third harmonic of Nd:YLF laser, a second harmonic of Yb:YAG laser, a third harmonic of Yb:YAG laser, a second harmonic of Yb:glass laser, and a third harmonic of Yb:glass laser. 7. The laser heat treatment method according to claim 1, wherein the laser beam generated from said pulse laser source has energy of at least 0.5 mJ per pulse. 8. The laser heat treatment method according to claim 1, wherein the laser beam generated from said pulse laser source has pulse duration of less than 200 nsec. 9. The laser heat treatment method according to claim 1, wherein said film material is an amorphous or polycrystalline silicon film. 10. The laser heat treatment method according to claim 9, wherein said amorphous or polycrystalline silicon film has a thickness of less than 200 nm. 11. The laser heat treatment method according to claim 9, wherein a number of pulses of pulse laser light directed onto a same portion of said amorphous or polycrystalline silicon film is at most 100 pulses. 12. The laser heat treatment method according to claim 9, wherein an irradiation energy density at a surface of said amorphous or polycrystalline silicon film is in a range from 100 mJ/cm2to 1,500 mJ/cm2.