초록 ▼

An embodiment of the instant invention is a mask having a pattern which is transferred to a layer overlying a semiconductor wafer, the mask comprising: a transmissive portion (structure 102 of FIG. 1), the transmissive portion allowing energy which impinges upon the transmission portion to substanti

An embodiment of the instant invention is a mask having a pattern which is transferred to a layer overlying a semiconductor wafer, the mask comprising: a transmissive portion (structure 102 of FIG. 1), the transmissive portion allowing energy which impinges upon the transmission portion to substantially pass through the transmissive portion; a substantially non-transmissive portion (structure 106 of FIG. 1); a semi-transmissive portion (structure 104 of FIG. 1) situated between the transmissive portion and the substantially non-transmissive portion, energy passing through the semi-transmissive portion having a phase; and wherein the phase of energy which passes through the semi-transmissive portion is out of phase with the phase of energy which passes through the transmissive portion. Preferably, the phase of the energy which passes through the semi-transmissive portion is around 180 degrees out of phase with energy which passes through the transmissive portion.

대표청구항 ▼

An embodiment of the instant invention is a mask having a pattern which is transferred to a layer overlying a semiconductor wafer, the mask comprising: a transmissive portion (structure 102 of FIG. 1), the transmissive portion allowing energy which impinges upon the transmission portion to substanti

An embodiment of the instant invention is a mask having a pattern which is transferred to a layer overlying a semiconductor wafer, the mask comprising: a transmissive portion (structure 102 of FIG. 1), the transmissive portion allowing energy which impinges upon the transmission portion to substantially pass through the transmissive portion; a substantially non-transmissive portion (structure 106 of FIG. 1); a semi-transmissive portion (structure 104 of FIG. 1) situated between the transmissive portion and the substantially non-transmissive portion, energy passing through the semi-transmissive portion having a phase; and wherein the phase of energy which passes through the semi-transmissive portion is out of phase with the phase of energy which passes through the transmissive portion. Preferably, the phase of the energy which passes through the semi-transmissive portion is around 180 degrees out of phase with energy which passes through the transmissive portion. se to energy impinging on the semi-transmissive portion, and wherein said semi-transmissive portion is comprised of a material which allows between 6 and 12 percent of the energy impinging on the semi-transmissive portion to pass through said semi-transmissive portion. 5. The mask of claim 1, wherein the third amount of energy is in response to energy impinging on the semi-transmissive portion, and wherein said semi-transmissive portion is comprised of a material which allows between 8 and 10 percent of the energy impinging on the semi-transmissive portion to pass through said semi-transmissive portion. 6. The mask of claim 1, wherein said impinging energy is comprised of energy selected from the group consisting of: DUV energy, I-line energy, x-ray energy, electron beam energy, optical energy and any combination thereof. 7. The mask of claims 6, wherein the third amount of energy is in response to energy impinging on the semi-transmissive portion, and wherein the thickness of said semi-transmissive portion is around on half the wavelength of the energy impinging on the semi-transmissive portion. 8. The mask of claim 1, wherein the rim width W falls within the range of (1/2) * D