초록 ▼

A metal-insulator-metal (MIM) capacitor is made according to a copper dual-damascene process. A first copper or copper alloy metal layer if formed on a substrate. A portion of the first metal layer is utilized as the lower plate of the MIM capacitor. An etch stop dielectric layer is used during etch

A metal-insulator-metal (MIM) capacitor is made according to a copper dual-damascene process. A first copper or copper alloy metal layer if formed on a substrate. A portion of the first metal layer is utilized as the lower plate of the MIM capacitor. An etch stop dielectric layer is used during etching of subsequent layers. A portion of an etch stop layer is not removed and is utilized as the insulator for the MIM capacitor. A second copper or copper alloy metal layer is later formed on the substrate. A portion of the second metal layer is utilized as the upper plate of the MIM capacitor.

대표청구항 ▼

What is claimed is: 1. A metal-insulator-metal (MIM) capacitor, comprising: a first metal layer comprising copper or copper alloy directly in contact with a dielectric layer, wherein a portion of the first metal layer is utilized as a lower plate of the MIM capacitor; an etch stop layer directly in

What is claimed is: 1. A metal-insulator-metal (MIM) capacitor, comprising: a first metal layer comprising copper or copper alloy directly in contact with a dielectric layer, wherein a portion of the first metal layer is utilized as a lower plate of the MIM capacitor; an etch stop layer directly in contact with dielectric layer and directly on the first metal layer, wherein a portion of the etch stop layer is utilized as an insulator for the MIM capacitor; and a second metal layer comprising copper or copper alloy directly in contact with a portion of the etch stop layer, wherein a portion of the second metal layer is utilized as an upper plate of the MIM capacitor. 2. The MIM capacitor according to claim 1, wherein the stop layer includes a silicon nitride layer. 3. The MIM capacitor according to claim 1, wherein the second metal layer comprises a chemical-mechanical polished surface. 4. The MIM capacitor according to claim 1, wherein the first metal layer comprises a chemical-mechanical polished surface. 5. A metal-insulator-metal (MIM) capacitor, comprising: a first dielectric layer directly in contact with a substrate; a first metal layer made from copper and directly in contact with the first dielectric layer; a stop layer directly in contact with the first dielectric layer; a second dielectric layer directly in contact with the stop layer; a first opening and a second opening in the second dielectric layer that expose portions of the stop layer above a first region and a second region of the first metal layer; a third opening adjacent the second opening in the second dielectric layer; and a second metal layer made from copper in the first, second, and third openings over the substrate, wherein the metal-insulator-metal (MIM) capacitor comprises the first region of the first metal layer, the stop layer, and the filled first opening, and wherein the filled second opening is a via between the first and second metal layers. 6. The MIM capacitor of claim 5, wherein the first dielectric layer includes a silicon oxide layer. 7. The MIM capacitor of claim 5, wherein the stop layer includes a silicon nitride layer. 8. The MIM capacitor of claim 5, wherein the second dielectric layer includes a silicon oxide layer. 9. The MIM capacitor of claim 5, wherein the second metal layer comprises chemical-mechanical polished surface. 10. The MIM capacitor of claim 5, wherein the first metal layer comprises chemical-mechanical polished surface. 11. The MIM capacitor of claim 5, wherein the first and second dielectric layers are thicker than the stop layer. 12. A metal-insulator-metal (MIM) capacitor, comprising: a first dielectric layer directly in contact with a substrate, the first dielectric layer having a removed depth-wise portion filled with a copper or copper alloy, thereby forming a first metal layer; a stop layer directly in contact with the first dielectric layer and the first metal layer; and a second dielectric layer directly in contact with the stop layer, the second dielectric layer having a first opening and a second opening that expose portions of the stop layer above a first region and a second region of the first metal layer, respectively, wherein the first and second openings are filled with a copper or copper alloy, thereby forming a second metal layer; wherein a metal-insulator-metal (MIM) capacitor is by the first region of the first metal layer, the stop layer, and the filled first opening, and wherein the filled second opening is a via between the first and second metal layers. 13. The MIM capacitor of claim 12, wherein the first dielectric layer includes a silicon oxide layer. 14. The MIM capacitor of claim 12, wherein the stop layer includes a silicon nitride layer. 15. The MIM capacitor of claim 12, wherein the second dielectric layer includes a silicon oxide layer. 16. The MIM capacitor of claim 12, wherein the second metal layer comprises chemical-mechanical polished surface. 17. The MIM capacitor of claim 12, wherein said first metal layer comprises chemical-mechanical polished surface. 18. The MIM capacitor of claim 12, wherein the first and second dielectric layers are thicker than the stop layer.