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A semiconductor device including a contact etch stop layer and contact hole formation method for reduced underlying material loss and improved device performance, the method including providing a semiconductor substrate including an active region including a CMOS device, STI structures, and metal si

A semiconductor device including a contact etch stop layer and contact hole formation method for reduced underlying material loss and improved device performance, the method including providing a semiconductor substrate including an active region including a CMOS device, STI structures, and metal silicide regions; forming a fluorine doped amorphous carbon layer over the active region; forming a PMD layer on the fluorine doped amorphous carbon layer; dry etching contact holes in the PMD layer to expose the fluorine doped amorphous carbon layer; and, removing the fluorine doped amorphous carbon layer according to a dry stripping process.

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What is claimed is: 1. A method of forming a contact hole with reduced material loss underlying a contact etch stop layer comprising the steps of: providing a semiconductor substrate comprising an active region comprising a CMOS device, STI structures, and metal silicide regions; forming a fluorine

What is claimed is: 1. A method of forming a contact hole with reduced material loss underlying a contact etch stop layer comprising the steps of: providing a semiconductor substrate comprising an active region comprising a CMOS device, STI structures, and metal silicide regions; forming a fluorine doped amorphous carbon layer over the active region; forming a PMD layer on the fluorine doped amorphous carbon layer; dry etching contact holes in the PMD layer to expose the fluorine doped amorphous carbon layer; and, removing the fluorine doped amorphous carbon layer according to a dry stripping process. 2. The method of claim 1, wherein the step of dry etching and removing the fluorine doped amorphous carbon layer are performed in-situ. 3. The method of claim 1, further comprising the steps following forming a PMD layer and prior to dry etching of: forming an organic BARC layer on the PMD layer; and, forming a patterned photoresist layer for etching contact holes. 4. The method of claim 3, wherein the step of removing the fluorine doped amorphous carbon layer comprises simultaneously removing the photoresist layer and the BARC layer. 5. The method of claim 1, wherein the dry stripping process comprises hydrogen (H2) plasma source gas and an oxygen atom plasma source gas. 6. The method of claim 5, wherein the oxygen atom plasma source gas is selected from the group consisting of O2 and CO. 7. The method of claim 1, wherein the fluorine doped amorphous carbon layer is formed comprising tetrahedrally bonded carbon atoms. 8. The method of claim 1, wherein the fluorine doped amorphous carbon layer is formed essentially free of hydrogen. 9. The method of claim 1, wherein the fluorine doped amorphous carbon layer is formed by a PVD sputtering process at a temperature from about 25�� C. to about 400�� C. 10. The method of claim 1, wherein the fluorine doped amorphous carbon layer is formed having a fluorine content of about 10 atomic wt % to about 65 atomic wt %. 11. The method of claim 1, wherein the PMD layer is formed of a material selected from the group consisting of undoped silicate glass (USG), phosphorous doped silicate glass (PSG), spin on glass (SOG), and phosphorous doped spin on glass (PSOG), PTEOS, and BPTEOS. 12. The method of claim 1, wherein the PMD layer consists essentially of PSG. 13. The method of claim 1, wherein step of dry etching contact holes comprises plasma source gases selected from the group consisting of hydrofluorocarbons, fluorocarbons, oxygen, and argon. 14. The method of claim 1, wherein step of dry etching contact holes comprises hydrofluorocarbon plasma source gases selected from the group consisting of C4F6, C4F8, and CH2F2. 15. The method of claim 14, wherein the step of dry etching contact holes comprises in-situ formation of a carbon and fluorine containing polymer on an etching surface. 16. A method of forming a contact hole with reduced material loss underlying a contact etch stop layer and improved device performance comprising the steps of: providing a semiconductor substrate comprising an active region comprising a CMOS device, STI structures, and metal silicide regions; forming a hydrogen free fluorine doped amorphous carbon layer over the active region; forming a PMD layer on the hydrogen free fluorine doped amorphous carbon layer; dry etching contact holes in the PMD layer to expose the fluorine doped amorphous carbon layer; and, removing the hydrogen free fluorine doped amorphous carbon layer in-situ according to a dry stripping process. 17. The method of claim 16, further comprising the steps following forming a PMD layer and prior to dry etching of: forming an organic BARC layer on the END layer; and, forming a patterned photoresist layer for etching contact holes. 18. The method of claim 17, wherein the step of removing the hydrogen free fluorine doped amorphous carbon layer comprises simultaneously removing the photoresist layer and the BARC layer. 19. The method of claim 16, wherein the dry stripping process comprises hydrogen (H2) plasma source gas and an oxygen atom source selected from the group consisting of O2 and CO. 20. The method of claim 16, wherein the fluorine doped amorphous carbon layer is formed by a PVD sputtering process at a temperature from about 25�� C. to about 400�� C. 21. The method of claim 16, wherein the fluorine doped amorphous carbon layer is formed having a fluorine content of about 20 atomic wt % to about 45 atomic wt %. 22. The method of claim 16, wherein the PMD layer consists essentially of PSG. 23. The method of claim 16, wherein step of dry etching contact holes comprises hydrofluorocarbon plasma source gases selected from the group consisting of C4F6, C4F8, and CH2F2. 24. The method of claim 23, wherein the step of dry etching contact holes comprises in-situ formation of a carbon and fluorine containing polymer on etched opening sidewalls.