$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Showerhead assembly and ALD methods 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/455
  • C23F-001/00
  • H01L-021/306
  • H01L-021/02
  • C23C-016/06
  • C23C-016/22
출원번호 UP-0782727 (2004-02-18)
등록번호 US-7601223 (2009-10-28)
발명자 / 주소
  • Lindfors, Sven
  • Soininen, Pekka Juha
출원인 / 주소
  • ASM International N.V.
대리인 / 주소
    Knobbe, Martens, Olson & Bear, LLP.
인용정보 피인용 횟수 : 116  인용 특허 : 68

초록

An apparatus for depositing thin films onto a substrate is provided. The apparatus includes a gas exchange plate that is positioned within a reaction chamber having a platform. The gas exchange plate may be positioned above or below the platform and comprises a first plurality of passages and a seco

대표청구항

We claim: 1. An apparatus for depositing a thin film on a substrate, comprising: a reaction chamber having a reaction space; a substrate holder for holding the substrate within the reaction space; a gas outlet in fluid communication with the reaction space; a gas exchange plate having a first side

이 특허에 인용된 특허 (68)

  1. David T. Or ; Keith K. Koai ; Fufa Chen ; Lawrence C. Lei, 300 mm CVD chamber design for metal-organic thin film deposition.
  2. Sneh Ofer ; Galewski Carl J., Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition.
  3. Stanislaw Kopacz ; Douglas Arthur Webb ; Gerrit Jan Leusink ; Rene Emile LeBlanc ; Michael S. Ameen ; Joseph Todd Hillman ; Robert F. Foster ; Robert Clark Rowan, Jr., Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions.
  4. deBoer Wiebe B. (Amersfoort MN NLX) Jensen Klavs F. (Minneapolis MN) Johnson Wayne L. (Phoenix AZ) Read Gary W. (Chandler AZ) Robinson McDonald (Paradise Valley AZ), Apparatus for chemical vapor deposition using an axially symmetric gas flow.
  5. Oda Masao (Hyogo JPX) Kinoshita Yoshimi (Hyogo JPX) Hayama Masahiro (Hyogo JPX), Apparatus for forming thin film.
  6. Chen Yung-Ta,TWX, Apparatus to apply photoresist primer to a wafer.
  7. Beisswenger Siegfried (Alzenau DEX) Beichler Barbara (Rodgau DEX) Geisler Michael (Wchtersbach DEX) Reineck Stefan (Langgns DEX), Arrangement for the production of a plasma.
  8. Hyun Kwang-Soo,KRX ; Park Kyung-ho,KRX ; Yoon Neung-goo,KRX ; Choi Kang-jun,KRX ; Jeong Soo-hong,KRX, Atomic layer deposition apparatus for depositing atomic layer on multiple substrates.
  9. Tony P. Chiang ; Karl F. Leeser, Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD).
  10. Turlot, Emmanuel; Chevrier, Jean-Baptiste; Schmitt, Jacques; Barreiro, Jean, Design of gas injection for the electrode in a capacitively coupled RF plasma reactor.
  11. Watabe Masahiro (Kawasaki JPX), Dry process apparatus using plural kinds of gas.
  12. Majewski Robert ; Kao Yeh-Jen ; Wang Yen Kun, Dual channel gas distribution plate.
  13. Salimian Siamak (Sunnyvale CA) Heller Carol M. (San Jose CA) Li Lumin (Santa Clara CA), Dual-frequency capacitively-coupled plasma reactor for materials processing.
  14. Schmitt Jerome J. (New Haven CT) Halpern Bret L. (Bethany CT), Evaporation system and method for gas jet deposition of thin film materials.
  15. Hills Graham W. (Los Gatos CA) Su Yuh-Jia (Cupertino CA) Tanase Yoshiaki (Campbell CA) Ryan Robert E. (Sunnyvale CA), Focus ring for semiconductor wafer processing in a plasma reactor.
  16. Kearney Michael M., Fractal cascade as an alternative to inter-fluid turbulence.
  17. DeDontney, Jay Brian; Yao, Jack Chihchieh, Gas distribution system.
  18. Kugler Eduard (Feldkirch-Tisis ATX) Stock Jakob (Mastrils CHX) Rudigier Helmut (Bad Ragaz CHX), Gas inlet arrangement.
  19. Ballance David S. ; Bierman Benjamin ; Tietz James V., Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween.
  20. Shirakawa Eiichi,JPX ; Sata Nobuyuki,JPX, Heat treatment apparatus and substrate processing system.
  21. Savas Stephen E. ; Mattson Brad S., Inductive plasma reactor.
  22. Shufflebotham Paul Kevin ; McMillin Brian ; Demos Alex ; Nguyen Huong ; Berney Butch ; Ben-Dor Monique, Inductively coupled plasma CVD.
  23. Scobey Michael A. (Santa Rosa CA) Seddon Richard I. (Santa Rosa CA) Seeser James W. (Santa Rosa CA) Austin R. Russel (Santa Rosa CA) LeFebvre Paul M. (Santa Rosa CA) Manley Barry W. (Boulder CO), Magnetron sputtering apparatus and process.
  24. Yamazaki Shunpei (Tokyo JPX), Method and apparatus for forming non-single-crystal layer.
  25. Granneman Ernst Hendrik August,NLX ; Huussen Frank,NLX, Method and apparatus for supporting a semiconductor wafer during processing.
  26. Suntola Tuomo,FIX ; Lindfors Sven,FIX ; Soininen Pekka,FIX, Method and equipment for growing thin films.
  27. Fischer Heinrich (Furstentum LIX), Method for a reactive surface treatment of a workpiece and a treatment chamber for practicing such method.
  28. Coppens Marc-Olivier,BEX, Method for operating a chemical and/or physical process by means of a hierarchical fluid injection system.
  29. Iwasaki Tatsuya,JPX ; Den Tohru,JPX, Method for producing narrow wires comprising titanium oxide, and narrow wires and structures produced by the same method.
  30. Yun-sook Chae KR; In-sang Jeon KR; Sang-bom Kang KR; Sang-in Lee KR; Kyu-wan Ryu KR, Method of delivering gas into reaction chamber and shower head used to deliver gas.
  31. Zhao Jun ; Luo Lee ; Wang Jia-Xiang ; Jin Xiao Liang ; Wolff Stefan ; Sajoto Talex ; Chang Mei ; Smith Paul Frederick, Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment.
  32. DeDontney, Jay Brian; Matthiesen, Richard H.; Kurita, Samuel, Modular injector and exhaust assembly.
  33. Heming Martin,DEX ; Lange Ulrich,DEX ; Langfeld Roland,DEX ; Mohl Wolfgang,DEX ; Otto Jurgen,DEX ; Paquet Volker,DEX ; Segner Johannes,DEX ; Walther Martin,DEX, PICVD process and device for the coating of curved substrates.
  34. Hama Kiichi,JPX ; Hata Jiro,JPX ; Hongoh Toshiaki,JPX, Plasma process apparatus.
  35. Masaki Hirayama JP; Tadahiro Ohmi JP; Tatsushi Yamamoto JP; Takamitsu Tadera JP, Plasma process device.
  36. Ishida Toshimichi,JPX ; Yamada Yuichiro,JPX ; Takisawa Takahiro,JPX ; Tanabe Hiroshi,JPX, Plasma processing apparatus.
  37. Ishii Nobuo (Yamanashi-ken JPX), Plasma processing apparatus.
  38. Tomoyasu Masayuki,JPX ; Himori Shinji,JPX, Plasma processing method.
  39. Kisa Toshimasa (Kawasaki JPX), Plasma processor and method for IC fabrication.
  40. Ashtiani Kaihan Abidi (Nanuet NY), Plasma producing method and apparatus including an inductively-coupled plasma source.
  41. Kinoshita Shigeji (Itami JPX), Plasma reaction device.
  42. Celestino Salvatore A. (Novato CA) Gorin Georges J. (Pinole CA) Hilliker Stephen E. (Petaluma CA) Powell Gary B. (Petaluma CA), Plasma reactor apparatus.
  43. Drage David J. (Sebastopol CA), Plasma reactor having slotted manifold.
  44. Kawakami Satoru (Sagamihara JPX) Suzuki Tsuyoshi (Kawasaki JPX) Arami Junichi (Tokyo-To JPX) Deguchi Yoichi (Machida JPX), Plasma treatment apparatus.
  45. Moslehi Mehrdad M. (Dallas TX) Davis Cecil J. (Greenville TX) Matthews Robert T. (Plano TX), Programmable multizone gas injector for single-wafer semiconductor processing equipment.
  46. Sneh Ofer, Radical-assisted sequential CVD.
  47. Giammarco Nicholas J. (Newburgh NY) Kaplita George A. (New Windsor NY), Reactive ion etching apparatus.
  48. Garbis Dennis (Dix Hills NY) Chan Joseph Y. (Kings Park NY) Granata Amedeo J. (Flushing NY) Heller Robert C. (Stony Brook NY), Reactor and susceptor for chemical vapor deposition process.
  49. Hammond Martin L. (Cupertino CA) Ramiller Charles L. (Santa Clara CA), Reactor apparatus for semiconductor wafer processing.
  50. Olgado, Donald J. K.; Donoso, Bernardo; Lerner, Alexander, Rotary vacuum-chuck with venturi formed at base of rotating shaft.
  51. Anderson Roger N. (San Jose CA) Hey H. Peter W. (San Jose CA) Beinglass Israel (Sunnyvale CA) Venkatesan Mahalingam (San Jose CA), Semiconductor wafer process chamber with susceptor back coating.
  52. Kobayashi Norio (Yokosuka JPX), Semiconductor wafer processing apparatus having a Bernoulli chuck.
  53. Arthur Sherman, Sequential chemical vapor deposition.
  54. Sherman Arthur, Sequential chemical vapor deposition.
  55. Tony P. Chiang ; Karl F. Leeser, Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD).
  56. Fujikawa Yuichiro (Yamanashi-ken JPX) Hatano Tatsuo (Yamanashi-ken JPX) Murakami Seishi (Yamanashi-ken JPX), Shower head and film forming apparatus using the same.
  57. Jae Ho Kim KR; In Chel Shin KR; Sang Joon Park KR; Kwan Goo Rha KR; Sang Ho Kim KR, Showerhead apparatus for radical-assisted deposition.
  58. Lee Gil-Gwang (Seoul KRX) Fujihara Kazuyuki (Seoul KRX) Chang Kyu-hwan (Kyungki-do KRX), Showerhead for a gas supplying apparatus.
  59. Miller Adam Q. ; Dobkin Daniel M., Single body injector and deposition chamber.
  60. Wataru Okase JP; Masaaki Hasei JP, Single-substrate-heat-treating apparatus for semiconductor process system.
  61. Muller, K. Paul; Flietner, Bertrand; Roithner, Klaus, Spatially uniform gas supply and pump configuration for large wafer diameters.
  62. Reimer William A. (Wheaton IL), Stabilized array pin connector.
  63. Akimoto Masami,JPX, Substrate processing apparatus and substrate processing method.
  64. Okase Wataru,JPX, Substrate treatment system.
  65. Kordina Olle (Sturefors SEX) Fornell Jan-Olov (Malmo SEX) Berge Rune (Lund SEX) Nilsson Roger (Lund SEX), Susceptor for a device for epitaxially growing objects and such a device.
  66. Shinriki,Hiroshi; Arami,Junichi, Thin-film deposition apparatus.
  67. Ohkase Wataru,JPX ; Aoki Kazutsugu,JPX ; Hasei Masaaki,JPX, Wafer processing apparatus with a processing vessel, upper and lower separately sealed heating vessels, and means for maintaining the vessels at predetermined pressures.
  68. Dimock Jack A. (Santa Barbara CA), Wafer processing machine.

이 특허를 인용한 특허 (116)

  1. Ootsuka, Fumio, 3D stacked multilayer semiconductor memory using doped select transistor channel.
  2. Marquardt, David; Shugrue, John, Apparatus and method for calculating a wafer position in a processing chamber under process conditions.
  3. Oosterlaken, Theodorus; de Ridder, Chris; Jdira, Lucian, Apparatus and method for manufacturing a semiconductor device.
  4. Kamiya, Tatsuo, Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum.
  5. den Hartog Besselink, Edwin; Garssen, Adriaan; Dirkmaat, Marco, Cassette holder assembly for a substrate cassette and holding member for use in such assembly.
  6. Halpin, Michael; Shero, Eric; White, Carl; Alokozai, Fred; Winkler, Jerry; Dunn, Todd, Chamber sealing member.
  7. Halpin, Michael; Shero, Eric; White, Carl; Alokozai, Fred; Winkler, Jerry; Dunn, Todd, Chamber sealing member.
  8. Zaitsu, Masaru; Fukazawa, Atsuki; Fukuda, Hideaki, Continuous process incorporating atomic layer etching.
  9. Leeser, Karl F.; Sims, James S., Contoured showerhead for improved plasma shaping and control.
  10. Leeser, Karl F.; Sims, James S., Contoured showerhead for improved plasma shaping and control.
  11. Nelson, Shelby F.; Levy, David H.; Kerr, Roger S., Delivery device comprising gas diffuser for thin film deposition.
  12. Kerr, Roger S.; Levy, David H.; Murray, James T., Delivery device for deposition.
  13. Kerr, Roger S.; Levy, David H.; Murray, James T., Delivery device for deposition.
  14. Raisanen, Petri; Shero, Eric; Haukka, Suvi; Milligan, Robert Brennan; Givens, Michael Eugene, Deposition of metal borides.
  15. Zhu, Chiyu; Shrestha, Kiran; Haukka, Suvi, Deposition of metal borides.
  16. Li, Dong, Deposition of ruthenium or ruthenium dioxide.
  17. Levy, David H.; Kerr, Roger S.; Carey, Jeffrey T., Deposition system for thin film formation.
  18. Yednak, III, Andrew M.; Dunn, Todd; White, Carl; Manasco, Michael, Deposition valve assembly and method of heating the same.
  19. Pore, Viljami J.; Haukka, Suvi P.; Blomberg, Tom E.; Tois, Eva E., Doped metal germanide and methods for making the same.
  20. Dhindsa, Rajinder; Marakhatnov, Alexei; Bailey, III, Andrew D., Dual plasma volume processing apparatus for neutral/ion flux control.
  21. Haukka, Suvi P.; Tuominen, Marko J.; Rahtu, Antti, Enhanced deposition of noble metals.
  22. Haukka, Suvi P.; Tuominen, Marko J.; Rahtu, Antti, Enhanced deposition of noble metals.
  23. Haukka, Suvi P.; Tuominen, Marko J.; Rahtu, Antti, Enhanced deposition of noble metals.
  24. Milligan, Robert Brennan, Formation of boron-doped titanium metal films with high work function.
  25. Liang, Qiwei; Nemani, Srinivas D.; Yieh, Ellie Y., Gas control in process chamber.
  26. Hawkins, Mark; Halleck, Bradley Leonard; Kirschenheiter, Tom; Hossa, Benjamin; Pottebaum, Clay; Miskys, Claudio, Gas distribution system, reactor including the system, and methods of using the same.
  27. Krücken, Thomas; Gopi, Baskar Pagadala; Dauelsberg, Martin, Gas distributor for a CVD reactor.
  28. Yednak, III, Andrew M.; Pettinger, Jr., Frederick L., Heater jacket for a fluid line.
  29. Shugrue, John; Moen, Ron, Lockout tagout for semiconductor vacuum valve.
  30. Jung, Sung-Hoon, Metal oxide protective layer for a semiconductor device.
  31. Jung, Sung-Hoon, Metal oxide protective layer for a semiconductor device.
  32. Pore, Viljami J.; Haukka, Suvi P.; Blomberg, Tom E.; Tois, Eva E., Metal silicide, metal germanide, methods for making the same.
  33. Pore, Viljami J.; Haukka, Suvi P.; Blomberg, Tom E.; Tois, Eva E., Metal silicide, metal germanide, methods for making the same.
  34. Pore, Viljami, Method and apparatus for filling a gap.
  35. Pore, Viljami; Knaepen, Werner; Jongbloed, Bert; Pierreux, Dieter; Van Aerde, Steven R. A.; Haukka, Suvi; Fukuzawa, Atsuki; Fukuda, Hideaki, Method and apparatus for filling a gap.
  36. Pore, Viljami; Knaepen, Werner; Jongbloed, Bert; Pierreux, Dieter; Van Der Star, Gido; Suzuki, Toshiya, Method and apparatus for filling a gap.
  37. Tolle, John; Hill, Eric; Winkler, Jereld Lee, Method and system for in situ formation of gas-phase compounds.
  38. Jung, Sung-Hoon; Raisanen, Petri; Liu, Eric Jen Cheng; Schmotzer, Mike, Method and system to reduce outgassing in a reaction chamber.
  39. Jung, Sung-Hoon; Raisanen, Petri; Liu, Eric Jen Cheng; Schmotzer, Mike, Method and system to reduce outgassing in a reaction chamber.
  40. Winkler, Jereld Lee, Method and systems for in-situ formation of intermediate reactive species.
  41. Suemori, Hidemi, Method for depositing dielectric film in trenches by PEALD.
  42. Kang, DongSeok, Method for depositing thin film.
  43. Takamure, Noboru; Okabe, Tatsuhiro, Method for forming Ti-containing film by PEALD using TDMAT or TDEAT.
  44. Shiba, Eiichiro, Method for forming aluminum nitride-based film by PEALD.
  45. Winkler, Jereld Lee, Method for forming conformal carbon films, structures conformal carbon film, and system of forming same.
  46. Fukazawa, Atsuki, Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition.
  47. Fukazawa, Atsuki; Fukuda, Hideaki; Takamure, Noboru; Zaitsu, Masaru, Method for forming dielectric film in trenches by PEALD using H-containing gas.
  48. Kimura, Yosuke; de Roest, David, Method for forming film having low resistance and shallow junction depth.
  49. Shinriki, Hiroshi; Namba, Kunitoshi; Jeong, Daekyun, Method for forming metal film by ALD using beta-diketone metal complex.
  50. Ishikawa, Dai; Fukazawa, Atsuki, Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches.
  51. Namba, Kunitoshi, Method for forming silicon oxide cap layer for solid state diffusion process.
  52. Shiba, Eiichiro, Method for performing uniform processing in gas system-sharing multiple reaction chambers.
  53. Yamagishi, Takayuki; Suwada, Masaei; Tanaka, Hiroyuki, Method for positioning wafers in multiple wafer transport.
  54. Kato, Richika; Nakano, Ryu, Method for protecting layer by forming hydrocarbon-based extremely thin film.
  55. Kato, Richika; Okuro, Seiji; Namba, Kunitoshi; Nonaka, Yuya; Nakano, Akinori, Method for protecting layer by forming hydrocarbon-based extremely thin film.
  56. Haukka, Suvi; Shero, Eric James; Alokozai, Fred; Li, Dong; Winkler, Jereld Lee; Chen, Xichong, Method for treatment of deposition reactor.
  57. Zaitsu, Masaru, Method of atomic layer etching using functional group-containing fluorocarbon.
  58. Zaitsu, Masaru; Kobayashi, Nobuyoshi; Kobayashi, Akiko; Hori, Masaru; Kondo, Hiroki; Tsutsumi, Takayoshi, Method of cyclic dry etching using etchant film.
  59. Knaepen, Werner; Maes, Jan Willem; Jongbloed, Bert; Kachel, Krzysztof Kamil; Pierreux, Dieter; De Roest, David Kurt, Method of forming a structure on a substrate.
  60. Lee, Choong Man; Yoo, Yong Min; Kim, Young Jae; Chun, Seung Ju; Kim, Sun Ja, Method of forming metal interconnection and method of fabricating semiconductor apparatus using the method.
  61. Kostamo, Juhana; Soininen, Pekka J.; Elers, Kai-Erik; Haukka, Suvi, Method of growing electrical conductors.
  62. Chun, Seung Ju; Yoo, Yong Min; Choi, Jong Wan; Kim, Young Jae; Kim, Sun Ja; Lim, Wan Gyu; Min, Yoon Ki; Lee, Hae Jin; Yoo, Tae Hee, Method of processing a substrate and a device manufactured by using the method.
  63. Kohen, David; Profijt, Harald Benjamin, Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures.
  64. Pore, Viljami J.; Haukka, Suvi P.; Blomberg, Tom E.; Tois, Eva E., Methods for depositing nickel films and for making nickel silicide and nickel germanide.
  65. Raisanen, Petri; Givens, Michael Eugene, Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures.
  66. Kim, Jong Su; Park, Hyung Sang, Methods of depositing a ruthenium film.
  67. Tolle, John, Methods of forming films including germanium tin and structures and devices including the films.
  68. Margetis, Joe; Tolle, John, Methods of forming highly p-type doped germanium tin films and structures and devices including the films.
  69. Woodruff, Jacob Huffman, Methods of forming metal silicides.
  70. Woodruff, Jacob Huffman, Methods of forming metal silicides.
  71. Margetis, Joe; Tolle, John, Methods of forming silicon germanium tin films and structures and devices including the films.
  72. Winkler, Jereld Lee; Shero, Eric James; Alokozai, Fred, Multi-step method and apparatus for etching compounds containing a metal.
  73. Zhu, Chiyu; Asikainen, Timo; Milligan, Robert Brennan, NbMC layers.
  74. Milligan, Robert Brennan; Alokozai, Fred, Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same.
  75. Kim, Hyoung Won; Seo, Young Soo; Yoon, Chi Kug; Lee, Jun Hyeok; Han, Young Ki; Choi, Jae Chul, Plasma processing apparatus and method for plasma processing.
  76. Dhindsa, Rajinder; Marakhatnov, Alexei; Bailey, III, Andrew D., Plasma processing chamber with dual axial gas injection and exhaust.
  77. Dhindsa, Rajinder; Marakhtanov, Alexei; Bailey, III, Andrew D., Plasma processing chamber with dual axial gas injection and exhaust.
  78. Fondurulia, Kyle; Shero, Eric; Verghese, Mohith E.; White, Carl L., Precursor delivery system.
  79. Pettinger, Fred; White, Carl; Marquardt, Dave; Ibrani, Sokol; Shero, Eric; Dunn, Todd; Fondurulia, Kyle; Halpin, Mike, Process feed management for semiconductor substrate processing.
  80. Pettinger, Fred; White, Carl; Marquardt, Dave; Ibrani, Sokol; Shero, Eric; Dunn, Todd; Fondurulia, Kyle; Halpin, Mike, Process feed management for semiconductor substrate processing.
  81. Margetis, Joe; Tolle, John; Bartlett, Gregory; Bhargava, Nupur, Process for forming a film on a substrate using multi-port injection assemblies.
  82. Alokozai, Fred; Milligan, Robert Brennan, Process gas management for an inductively-coupled plasma deposition reactor.
  83. Alokozai, Fred; Milligan, Robert Brennan, Process gas management for an inductively-coupled plasma deposition reactor.
  84. Alokozai, Fred; Milligan, Robert Brennan, Process gas management for an inductively-coupled plasma deposition reactor.
  85. Winkler, Jereld Lee, Pulsed remote plasma method and system.
  86. Shero, Eric; Halpin, Michael; Winkler, Jerry, Radiation shielding for a substrate holder.
  87. Huotari, Hannu; Tuominen, Marko; Leinikka, Miika, Selective deposition of noble metal thin films.
  88. Huotari, Hannu; Tuominen, Marko; Leinikka, Miika, Selective deposition of noble metal thin films.
  89. Zhu, Chiyu, Selective film deposition method to form air gaps.
  90. Kim, Young Jae; Choi, Seung Woo; Yoo, Yong Min, Semiconductor device and manufacturing method thereof.
  91. Raisanen, Petri; Givens, Michael; Verghese, Mohith, Semiconductor device dielectric interface layer.
  92. Raisanen, Petri; Givens, Michael; Verghese, Mohith, Semiconductor device dielectric interface layer.
  93. Shero, Eric; Verghese, Mohith E.; White, Carl L.; Terhorst, Herbert; Maurice, Dan, Semiconductor processing reactor and components thereof.
  94. Milligan, Robert Brennan; Alokozai, Fred, Semiconductor reaction chamber with plasma capabilities.
  95. Milligan, Robert Brennan; Alokozai, Fred, Semiconductor reaction chamber with plasma capabilities.
  96. Xie, Qi; Machkaoutsan, Vladimir; Maes, Jan Willem, Semiconductor structure and device and methods of forming same using selective epitaxial process.
  97. Arai, Izumi, Single-and dual-chamber module-attachable wafer-handling chamber.
  98. Xie, Qi; de Roest, David; Woodruff, Jacob; Givens, Michael Eugene; Maes, Jan Willem; Blanquart, Timothee, Source/drain performance through conformal solid state doping.
  99. Weeks, Keith Doran, Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same.
  100. Tolle, John, Structures and devices including germanium-tin films and methods of forming same.
  101. Nakashima, Seiyo; Yamada, Tomoyuki; Shimada, Masakazu, Substrate processing apparatus, method for manufacturing semiconductor device, and process tube.
  102. Jeong, Sang Jin; Han, Jeung Hoon; Choi, Young Seok; Park, Ju Hyuk, Susceptor for semiconductor substrate processing apparatus.
  103. Dunn, Todd; Alokozai, Fred; Winkler, Jerry; Halpin, Michael, Susceptor heater and method of heating a substrate.
  104. Dunn, Todd; Alokozai, Fred; Winkler, Jerry; Halpin, Michael, Susceptor heater and method of heating a substrate.
  105. Dunn, Todd; White, Carl; Halpin, Michael; Shero, Eric; Winkler, Jerry, Susceptor heater shim.
  106. Tang, Fu; Givens, Michael Eugene; Xie, Qi; Raisanen, Petri, System and method for gas-phase sulfur passivation of a semiconductor surface.
  107. Lawson, Keith R.; Givens, Michael E., Systems and methods for dynamic semiconductor process scheduling.
  108. Sarin, Michael Christopher; Mendez, Rafael; Bartlett, Gregory M.; Hill, Eric; Lawson, Keith R.; Rosser, Andy, Systems and methods for mass flow controller verification.
  109. Raisanen, Petri; Sung-hoon, Jung; Mohith, Verghese, Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species.
  110. Shero, Eric J.; Raisanen, Petri I.; Jung, Sung-Hoon; Wang, Chang-Gong, Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species.
  111. Shero, Eric; Raisanen, Petri I.; Jung, Sung Hoon; Wang, Chang-Gong, Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species.
  112. Higashi, Gregg; Lerner, Alexander; Sorabji, Khurshed; Washington, Lori D.; Hegedus, Andreas, Tiled showerhead for a semiconductor chemical vapor deposition reactor.
  113. Higashi, Gregg; Sorabji, Khurshed; Washington, Lori D.; Hegedus, Andreas, Tiled showerhead for a semiconductor chemical vapor deposition reactor.
  114. Coomer, Stephen Dale, Variable adjustment for precise matching of multiple chamber cavity housings.
  115. Shugrue, John Kevin, Variable conductance gas distribution apparatus and method.
  116. Schmotzer, Michael; Whaley, Shawn, Variable gap hard stop design.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로