초록 ▼

A sensing method for a memory cell as described herein includes selecting a memory cell. A first bias applied to the memory cell induces a first response in the memory cell. A second bias applied to the memory cell induces a second response in the memory cell, the second bias different from the firs

A sensing method for a memory cell as described herein includes selecting a memory cell. A first bias applied to the memory cell induces a first response in the memory cell. A second bias applied to the memory cell induces a second response in the memory cell, the second bias different from the first bias. The method includes determining a data value stored in the memory cell based on a difference between the first and second responses and a predetermined reference.

대표청구항 ▼

What is claimed is: 1. A sensing method for a memory cell, the method comprising: selecting a memory cell; applying a first bias to the memory cell to induce a first response in the memory cell; applying a second bias to the memory cell to induce a second response in the memory cell, the second bia

What is claimed is: 1. A sensing method for a memory cell, the method comprising: selecting a memory cell; applying a first bias to the memory cell to induce a first response in the memory cell; applying a second bias to the memory cell to induce a second response in the memory cell, the second bias different from the first bias; and determining a data value stored in the memory cell based on a difference between the first and second responses and a predetermined reference. 2. The method of claim 1, wherein: the applying a first bias comprises applying a first voltage to the memory cell to induce a first current in the memory cell; the applying a second bias comprises applying a second voltage to the memory cell to induce a second current in the memory cell, the second voltage different from the first voltage; and the determining a data value stored in the memory cell comprises determining the data value based on a difference between the first and second currents and the predetermined reference. 3. The method of claim 2, wherein the determining a data value in the memory cell further comprises: setting a sensing node to a first sensing voltage based on the first current in the memory cell; and setting the sensing node to a second sensing voltage based on the second current in the memory cell. 4. The method of claim 3, wherein: the setting a sensing node to a first sensing voltage comprises electrically coupling a series arrangement of a third voltage and a resistive load element to the sensing node, and proving a third current through the series arrangement dependent upon the first current in the memory cell; and the setting a sensing node to a second sensing voltage comprises electrically coupling the series arrangement of the third voltage and the resistive load element to the sensing node, and providing a fourth current through the series arrangement dependent upon the second current in the memory cell. 5. The method of claim 4, wherein: the third current is proportional to the first current; and the fourth current is proportional to the second current. 6. The method of claim 3, wherein the determining a data value in the memory cell further comprises: setting a voltage across a first capacitor dependent upon the first sensing voltage; setting a voltage across a second capacitor dependent upon the second sensing voltage; coupling a voltage to a first input of a sense amplifier based on a difference between the voltage across the first capacitor and the voltage across the second capacitor; and generating an output signal of the sense amplifier based on a difference between the voltage of the first input of the sense amplifier and a predetermined reference voltage applied to a second input of the sense amplifier, the output signal indicating the data value stored in the memory cell. 7. The method of claim 6, wherein the output signal of the sense amplifier comprises a first output voltage if the memory cell is in a programmed state, and comprises a second output voltage if the memory cell is in a reset state, the first output voltage different from the second output voltage. 8. The method of claim 6, wherein: the setting a voltage across a first capacitor comprises electrically coupling a first node of the first capacitor to the sensing node when the voltage on the sensing node is the first sensing voltage, and electrically coupling a second node of the first capacitor to a fourth voltage; the setting a voltage across the second capacitor comprises electrically coupling a first node of the second capacitor to the sensing node when the voltage on the sensing node is the second sensing voltage, and electrically coupling a second node of the second capacitor to a fifth voltage; and the coupling a voltage to a first input of a sense amplifier comprises: electrically coupling the first node of the first capacitor to the first node of the second capacitor; electrically coupling the second node of the second capacitor to a sixth voltage; and electrically coupling the second node of the first capacitor to the first input of the sense amplifier. 9. A method of claim 1, wherein the memory cell comprises programmable resistive memory material. 10. A memory device comprising: a memory cell; circuitry to apply a first bias to the memory cell to induce a first response in the memory cell, and apply a second bias to the memory cell to induce a second response in the memory cell, the second bias different from the first bias; and sense amplifier circuitry responsive to a difference between the first and second responses and a predetermined reference to generate an output signal indicating a data value stored in the memory cell. 11. The device of claim 10, wherein: the first bias comprises a first voltage applied to the memory cell to induce a first current in the memory cell; the second bias comprises a second voltage applied to the memory cell to induce a second current in the memory cell; and the sense amplifier circuitry responsive to a difference between the first and second currents and the predetermined reference to generate an output signal indicating the data value stored in the memory cell. 12. The device of claim 11, wherein the sense amplifier circuitry comprises a sensing node and a series arrangement of a third voltage and a resistive load element selectively coupled to the sensing node, and further comprising: circuitry to provide a third current through the series arrangement dependent upon the first current in the memory cell to set the sensing node to a first sensing voltage, and to provide a fourth current through the series arrangement dependent upon the second current in the memory cell to set the sensing node to a second sensing voltage. 13. The device of claim 12, wherein the sense amplifier circuitry further comprises first and second capacitors, the sense amplifier circuitry adapted to set a voltage across the first capacitor dependent upon the first sensing voltage and set a voltage across the second capacitor dependent upon the second sensing voltage, and responsive to a difference between the voltages across the first and second capacitors to generate an output signal indicating the data value stored in the memory cell. 14. The device of claim 13, wherein the output signal of the sense amplifier circuitry comprises a first output voltage if the memory cell is in a programmed state, and comprises a second output voltage if the memory cell is in a reset state, the first output voltage different from the second output voltage. 15. The device of claim 10, wherein the memory cell comprises programmable resistive memory material.