초록 ▼

A circuit (200) can include a reference circuit (202) and a start-up circuit (204). A start-up circuit (204) can include a low threshold voltage reference current device (N3) that can pull a start node (210) low in a start-up operation. This can enable activation device (P3), which can place referen

A circuit (200) can include a reference circuit (202) and a start-up circuit (204). A start-up circuit (204) can include a low threshold voltage reference current device (N3) that can pull a start node (210) low in a start-up operation. This can enable activation device (P3), which can place reference circuit (202) in a stable operating mode. Operation of transistor (N3) can be essentially independent of a high power supply voltage and start-up circuit (204) can include no resistors.

대표청구항 ▼

What is claimed is: 1. An integrated circuit device, comprising: a self-biased reference circuit that provides a reference value to the integrated circuit device, the reference circuit being disposed between a first power supply node and a second power supply node that receives a power supply volta

What is claimed is: 1. An integrated circuit device, comprising: a self-biased reference circuit that provides a reference value to the integrated circuit device, the reference circuit being disposed between a first power supply node and a second power supply node that receives a power supply voltage of about zero volts, the reference circuit including a first current mirror coupled to the first power supply node and comprising a pair of first transistors of a first conductivity type; and a second current mirror coupled between the first current mirror and the second power supply node and comprising a pair of second transistors of a second conductivity type, the pair of second transistors having different threshold voltage values from one another; a start-up circuit comprising; a start-up current path coupled between the first power supply node and the second power supply node, the start-up current path comprising: a reference current transistor having a threshold voltage that is closer in magnitude to the power supply voltage than the first transistors and the second transistors and is in a range of about −100 millivolts to about +100 millivolts, wherein the reference current transistor has its gate electrically coupled to its source; a current supply transistor coupled to the reference current transistor; and an activation device coupled between the first power supply node and the self-biased reference circuit that is enabled in response to a potential established by the reference current transistor, wherein a current drawn by the reference current transistor is compared to a current supplied by the current supply transistor to determine when the activation device is enabled. 2. The integrated circuit device of claim 1, wherein: the pair of first transistors are p-channel insulated gate field effect transistors (IGFETs), and the pair of second transistors are n-channel IGFETs. 3. The integrated circuit device of claim 1, wherein: the second current mirror has a mirror bias node coupled to gates of the pair of second transistors; and the activation device is coupled to the mirror bias node. 4. The integrated circuit device of claim 1, wherein: the first current mirror has a mirror bias node coupled to gates of the pair of first transistors; and the current supply transistor is of the first conductivity type and has a source-drain path in series with a source-drain path of the reference current transistor, and a gate that is coupled to the mirror bias node. 5. The integrated circuit device of claim 1, wherein: the reference current transistor comprises an n-channel insulated gate field effect transistor (IGFET) having its gate and source also coupled to the second power supply node. 6. The integrated circuit device of claim 1, wherein: the activation device comprises a p-channel insulated gate field effect transistor (IGFET) having a gate coupled to the reference current transistor, a source coupled to the first power supply node, and a drain coupled to the selfbiased reference circuit. 7. The integrated circuit device of claim 1, wherein the first transistors and the second transistors comprise insulated gate field effect transistors (IGFETs). 8. A reference circuit, comprising: a reference section that provides a reference value for other circuits of an integrated circuit according to a bias voltage at a reference bias node, and includes a first current mirror circuit comprising: a first n-channel mirror transistor having a gate and drain coupled to the reference bias node and a source coupled to a second power supply node, and a second n-channel mirror transistor having a gate coupled to the gate of the first n-channel mirror transistor, the threshold voltage of the second n-channel mirror transistor being different from that of the first n-channel mirror transistor; and a start-up circuit comprising: a biasing device having a controllable impedance path between the reference bias node and a first power supply node, a reference current transistor having a drain coupled to the biasing device, wherein the reference current transistor has its gate electrically coupled to its source and wherein the reference current transistor's source and gate are also commonly coupled to the second power supply node, and a p-channel current supply transistor coupled to the reference current transistor, wherein a current drawn by the reference current transistor is compared to a current supplied by the current supply transistor to determine when the biasing device is turned on. 9. The reference circuit of claim 8, wherein: the reference section further comprises p-channel transistors and wherein the first and second n-channel mirror transistors have different predetermined n-channel threshold voltages; and the reference current transistor has a lower threshold voltage than the predetermined threshold voltages of the first and second n-channel mirror transistors. 10. The reference circuit of claim 8, wherein: at least one of the first and second n-channel mirror transistors is formed in an area defined by a threshold voltage adjustment implant mask; and the reference current transistor is not formed in the area defined by the threshold voltage adjustment implant mask. 11. The reference circuit of claim 8, wherein: the biasing device comprises a p-channel bias transistor having a source-drain path coupled between the reference bias node and the first power supply node, the reference current transistor comprises a drain coupled to the gate of the bias transistor, and the p-channel current supply transistor has a source-drain path coupled between the first power supply node and the drain of the reference current transistor, and a gate coupled to the reference section. 12. The reference circuit of claim 11, wherein the reference section further includes a second current mirror circuit comprising: a first p-channel mirror transistor having a gate coupled to the gate of the p-channel current supply transistor and a source-drain path coupled between the first power supply node and the reference bias node, and a second p-channel mirror transistor having a source coupled to the first power supply node and a gate and drain coupled to the gate of the first p-channel mirror transistor. 13. A reference circuit, comprising: a reference section that provides a reference value for other circuits of an integrated circuit according to a bias voltage at a reference bias node, and includes a p-channel current mirror, and an n-channel current mirror circuit comprising: a first n-channel mirror transistor having a gate and drain coupled to the reference bias node and a source coupled to a second power supply node, the first n-channel mirror transistor formed in an area defined by a threshold voltage adjustment implant mask, a second n-channel mirror transistor having a gate coupled to the gate of the first n-channel mirror transistor, the threshold voltage of the second n-channel mirror transistor being different from that of the first n-channel mirror transistor; a start-up circuit comprising: a p-channel biasing transistor having a controllable impedance source-drain path coupled between the reference bias node and a first power supply node, a reference current transistor having a drain coupled to a gate of the biasing transistor, a gate electrically coupled to its source, the source and gate of the reference current transistor also commonly coupled to the second power supply node, wherein the reference current transistor is formed in an area other than the area defined by the threshold voltage adjustment implant mask and has a lower threshold voltage than the threshold voltage of the first n-channel mirror transistor; and a p-channel current supply transistor having a source-drain path coupled between the first power supply node and the drain of the reference current transistor, and having a gate coupled to the reference section, wherein a current drawn by the reference current transistor is compared to a current supplied by the current supply transistor to determine when the biasing transistor is turned on.