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Method of multi-location ARC sensing with adaptive threshold comparison 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01H-009/50
  • C23C-014/34
출원번호 UP-0893355 (2007-08-15)
등록번호 US-7768269 (2010-08-24)
발명자 / 주소
  • Pipitone, John
  • Nunn-Gage, Ryan
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Law Office of Robert M. Wallace
인용정보 피인용 횟수 : 30  인용 특허 : 11

초록

A method of responding to voltage or current transients during processing of a wafer in a plasma reactor at each of plural RF power applicators and at the wafer support surface. For each process step and for each of the power applicators and the wafer support surface, the method includes determining

대표청구항

The invention claimed is: 1. In a plasma reactor comprising a chamber with plural plasma power applicators and plural power generators coupled to said power applicators and a workpiece support pedestal with a workpiece support surface, a method of monitoring arcing in said chamber, comprising: carr

이 특허에 인용된 특허 (11)

  1. Buda, Paul R., Apparatus and method for arc detection.
  2. Kunz Peter (Tann-Ruti CHX), Apparatus for automatically changing the integration time and resolution of an electrical scale under predetermined oper.
  3. Viola Jeffrey P. (Brookhaven PA) Ubben Roger C. (Cherry Hill NJ), Clock recovery using cavity resonator.
  4. Maki,Nobuhiro; Hiraiwa,Yuri; Oyamada,Kenichi; Abe,Hideaki, Computer system including novel fault notification relay.
  5. Forster John C. ; Stimson Bradley O. ; Xu Zheng, Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition.
  6. Abry Charles R. ; Murphy William J. ; Seward Jeffrey N., Method and apparatus for detecting arcs.
  7. Hoffman, Daniel J., Method of determining plasma ion density, wafer voltage, etch rate and wafer current from applied bias voltage and current.
  8. John Holland ; Valentin N. Todorow ; Michael Barnes, Plasma reactor having a symmetric parallel conductor coil antenna.
  9. Williams Norman (Austin TX) Spain James (Austin TX), Radio frequency monitor for semiconductor process control.
  10. Turner Duane L. ; Fleege Dennis W. ; Wiese Gregory S. ; Dvorak Robert F., Trip indicators for circuit protection devices.
  11. Sik, Yoo Woo, Wafer processing apparatus.

이 특허를 인용한 특허 (30)

  1. Valcore, Jr., John C.; Lyndaker, Bradford J., Adjustment of power and frequency based on three or more states.
  2. Valcore, Jr., John C.; Povolny, Henry S., Arrangement for plasma processing system control based on RF voltage.
  3. Howald, Arthur M.; Valcore, Jr., John C., Cable power loss determination for virtual metrology.
  4. Albarede, Luc, Chamber matching for power control mode.
  5. Albarede, Luc, Chamber matching using voltage control mode.
  6. Fong, Andrew S.; Valcore, Jr., John C., Computation of statistics for statistical data decimation.
  7. Valcore, Jr., John C.; Lyndaker, Bradford J.; Sato, Arthur, Determining a malfunctioning device in a plasma system.
  8. Valcore, Jr., John C.; Lyndaker, Bradford J., Determining a value of a variable on an RF transmission model.
  9. Valcore, Jr., John C.; Lyndaker, Bradford J.; Fong, Andrew S., Edge ramping.
  10. Valcore, Jr., John C.; Singh, Harmeet; Povolny, Henry, Etch rate modeling and use thereof for in-chamber and chamber-to-chamber matching.
  11. Valcore, Jr., John C.; Singh, Harmeet; Povolny, Henry, Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching.
  12. Valcore, Jr., John C.; Lyndaker, Bradford J., Impedance-based adjustment of power and frequency.
  13. Marakhtanov, Alexei; Chen, Zhigang; Holland, John Patrick, Ion energy control by RF pulse shape.
  14. Valcore, Jr., John C., Methods and apparatus for controlling a plasma processing system.
  15. Valcore, Jr., John C.; Lyndaker, Bradford J., Methods and apparatus for controlling plasma in a plasma processing system.
  16. Valcore, Jr., John C.; Rogers, James, Methods and apparatus for detecting the confinement state of plasma in a plasma processing system.
  17. Valcore, Jr., John C.; Lyndaker, Bradford J.; Singh, Harmeet, Methods and apparatus for synchronizing RF pulses in a plasma processing system.
  18. Valcore, Jr., John C.; Povolny, Henry S., Plasma processing system control based on RF voltage.
  19. Valcore, Jr., John C.; Rogers, James Hugh; Webb, Nicholas Edward; Muraoka, Peter T., RF impedance model based fault detection.
  20. Valcore, Jr., John C.; Howald, Arthur M., Segmenting a model within a plasma system.
  21. Valcore, Jr., John C., Soft pulsing.
  22. Klein, Jesse N.; Halstead, David C.; Gilbert, Michael R., Sputtering system and method including an arc detection.
  23. Valcore, Jr., John C.; Lyndaker, Bradford J., State-based adjustment of power and frequency.
  24. Valcore, Jr., John C.; Singh, Harmeet; Lyndaker, Bradford J., Sub-pulsing during a state.
  25. Suuronen, David E.; Peitzsch, Scott E., System and method for analyzing voltage breakdown in electrostatic chucks.
  26. Chen, Jian J.; Ayoub, Mohamad A., System and method for current-based plasma excursion detection.
  27. Suuronen, David E., System and method for in situ temperature measurement.
  28. Chen, Jian J.; Ayoub, Mohamad, System and method for voltage-based plasma excursion detection.
  29. Valcore, Jr., John C.; Lyndaker, Bradford J., Using modeling to determine ion energy associated with a plasma system.
  30. Valcore, Jr., John C.; Lyndaker, Bradford J., Using modeling to determine wafer bias associated with a plasma system.
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