$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Plasma processor and plasma processing method 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01J-037/32
  • C23C-016/509
  • C23C-016/455
  • H01J-037/34
  • H01L-021/67
출원번호 US-0561785 (2014-12-05)
등록번호 US-9728381 (2017-08-08)
우선권정보 JP-2001-210035 (2001-07-10); JP-2001-216424 (2001-07-17); JP-2002-068423 (2002-03-13)
발명자 / 주소
  • Kikuchi, Akihiro
  • Kayamori, Satoshi
  • Shima, Shinya
  • Sakamoto, Yuichiro
  • Higuchi, Kimihiro
  • Oohashi, Kaoru
  • Ueda, Takehiro
  • Shibuya, Munehiro
  • Gondai, Tadashi
출원인 / 주소
  • TOKYO ELECTRON LIMITED
대리인 / 주소
    Rothwell, Figg, Ernst & Manbeck, P.C.
인용정보 피인용 횟수 : 0  인용 특허 : 82

초록 ▼

An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower

대표청구항 ▼

1. A plasma processing apparatus comprising: a processing chamber configured to generate a plasma therein;a susceptor, installed in the processing chamber, configured to mount a substrate to be processed thereon;a focus ring disposed on a peripheral portion of the susceptor and configured to surroun

이 특허에 인용된 특허 (82)

  1. Mett Richard Raymond ; Dahimene Mahmoud ; Luscher Paul E. ; Salimian Siamak ; Contreras Mark Steven, Apparatus and method for actively controlling the DC potential of a cathode pedestal.
    상세보기
  2. Levinstein Hyman J. (Berkeley Heights NJ) Vratny Frederick (Berkeley Heights NJ), Apparatus and method for plasma-assisted etching of wafers.
    상세보기
  3. Koshiishi, Akira; Himori, Shinji, Apparatus for holding an object to be processed.
    상세보기
  4. Flanigan Allen ; Sugarman Michael N., Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system.
    상세보기
  5. Gilchrist Robin ; Wilhoit Michael S., Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment.
    상세보기
  6. Ma, Shawming; Straube, Ralph H M, Conductive collar surrounding semiconductor workpiece in plasma chamber.
    상세보기
  7. Salimian Siamak (Sunnyvale CA) Heller Carol M. (San Jose CA) Li Lumin (Santa Clara CA), Dual-frequency capacitively-coupled plasma reactor for materials processing.
    상세보기
  8. Komino,Mitsuaki; Amano,Hideaki; Endo,Shosuke; Fujisato,Toshiaki; Sasaki,Yasuharu, Electrode, susceptor, plasma processing apparatus and method of making the electrode and the susceptor.
    상세보기
  9. Divakar, Ramesh, Electrostatic chuck and method for forming an electrostatic chuck having porous regions for fluid flow.
    상세보기
  10. Morita Yoshihisa,JPX ; Okumura Nobuo,JPX ; Nakanishi Toshio,JPX, Electrostatic chuck and the method of operating the same.
    상세보기
  11. Barnes Michael S. (San Francisco CA) Keller John H. (Newburgh NY) Logan Joseph S. (Jamestown RI) Tompkins Robert E. (Pleasant Valley NY) Westerfield ; Jr. Robert P. (Montgomery NY), Electrostatic chuck with reference electrode.
    상세보기
  12. Kanno Seiichiro,JPX ; Usui Tatehito,JPX ; Yoshioka Ken,JPX ; Kanai Saburo,JPX ; Itou Youichi,JPX, Electrostatic chuck, and method of and apparatus for processing sample using the chuck.
    상세보기
  13. Howald Arthur M. ; Holland John P., Electrostatic dechucking method and apparatus for dielectric workpieces in vacuum processors.
    상세보기
  14. Jerome Hubacek, Electrostatically clamped edge ring for plasma processing.
    상세보기
  15. Gangadhara S. Mathad ; Rajiv Ranade, Elimination/reduction of black silicon in DT etch.
    상세보기
  16. Koshiishi, Akira; Tanaka, Hideaki; Okayama, Nobuyuki; Miyagawa, Masaaki; Mizukami, Shunsuke; Shimizu, Wataru; Hirose, Jun; Wakaki, Toshikatsu; Miwa, Tomonori; Ooyabu, Jun; Hayashi, Daisuke, Focus ring and plasma processing apparatus.
    상세보기
  17. Nezu, Takaaki; Horiguchi, Katsumi; Hayashi, Daisuke; Tsukahara, Toshiya, Focus ring for semiconductor treatment and plasma treatment device.
    상세보기
  18. Dhindsa Rajinder ; Singh Vikram ; Tokunaga Ken, Focus rings.
    상세보기
  19. Shamouilian Shamouil ; Kumar Ananda H. ; Kholodenko Arnold ; Grimard Dennis S. ; Mohn Jonathan D. ; Chafin Michael G. ; Collins Kenneth S., High density plasma process chamber.
    상세보기
  20. Cheng David (San Jose CA) Maydan Dan (Los Altos Hills CA) Somekh Sasson (Los Altos Hills CA) Stalder Kenneth R. (Redwood City CA) Andrews Dana L. (Mountain View CA) Chang Mei (San Jose CA) White John, Magnetic field-enhanced plasma etch reactor.
    상세보기
  21. Cheng David (San Jose CA) Maydan Dan (Los Altos Hills CA) Somekh Sasson (Los Altos Hills CA) Stalder Kenneth R. (Redwood City CA) Andrews Dana L. (Mountain View CA) Chang Mei (San Jose CA) White John, Magnetic field-enhanced plasma etch reactor.
    상세보기
  22. Shan Hongching ; Lindley Roger ; Bjorkman Claes ; Qian Xue Yu ; Plavidal Richard ; Pu Bryan ; Ding Ji ; Li Zongyu ; Ke Kuang-Han ; Welch Michael, Magnetically-enhanced plasma chamber with non-uniform magnetic field.
    상세보기
  23. Nozawa Toshihisa,JPX ; Horioka Keiji,JPX ; Hasegawa Isahiro,JPX, Magnetron plasma process apparatus.
    상세보기
  24. Chen, Huang-Ming; Chou, Chun-Li; Chen, Chao-Cheng; Tao, Hun-Jan, Method and apparatus for backside polymer reduction in dry-etch process.
    상세보기
  25. Graven Andrew J. ; Schmidt Melvin ; McCuen Kenneth A. ; Ra Yunju, Method and apparatus for clamping a substrate.
    상세보기
  26. Kakehi Yutaka (Hikari JPX) Nakazato Norio (Kudamatsu JPX) Fukushima Yoshimasa (Hikari JPX) Hiratsuka Kousai (Kudamatsu JPX) Shibata Fumio (Kudamatsu JPX) Yamamoto Noriaki (Kudamatsu JPX) Tsubone Tsun, Method and apparatus for controlling sample temperature.
    상세보기
  27. Benjamin, Neil; Steger, Robert, Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support.
    상세보기
  28. Mett Richard ; Salimian Siamak, Method and apparatus for minimizing plasma destabilization within a semiconductor wafer processing system.
    상세보기
  29. Koshimizu, Chishio; Ishihara, Hiroyuki; Higuchi, Kimihiro; Maruyama, Koji, Method and apparatus for plasma processing.
    상세보기
  30. Nishio, Ryoji; Kanekiyo, Tadamitsu; Oota, Yoshiyuki; Matsumoto, Tsuyoshi, Method and apparatus for plasma processing.
    상세보기
  31. Steve Crocker, Method and apparatus for semiconductor wafer process monitoring.
    상세보기
  32. Dahimene Mahmoud ; Mett Richard R. ; Salimian Siamak, Method and apparatus for supplying a chucking voltage to an electrostatic chuck within a semiconductor wafer processing system.
    상세보기
  33. Alan M. Schoepp ; Robert E. Knop ; Christopher H. Olson ; Michael S. Barnes ; Tuan M. Ngo, Method and device for compensating wafer bias in a plasma processing chamber.
    상세보기
  34. Otsubo Toru (Fujisawa JPX) Suzuki Yasumichi (Yokohama JPX) Sasaki Shinji (Yokohama JPX) Ohara Kazuhiro (Kudamatsu JPX) Sasaki Ichirou (Yokohama JPX), Method of and apparatus for removing foreign particles.
    상세보기
  35. Hoffman, Daniel J., Method of determining plasma ion density, wafer voltage, etch rate and wafer current from applied bias voltage and current.
    상세보기
  36. Hoffman, Daniel J., Method of determining wafer voltage in a plasma reactor from applied bias voltage and current and a pair of constants.
    상세보기
  37. Tamura Naoyuki,JPX ; Takahashi Kazue,JPX ; Ito Youichi,JPX ; Ogawa Yoshifumi,JPX ; Shichida Hiroyuki,JPX ; Tsubone Tsunehiko,JPX, Method of holding substrate and substrate holding system.
    상세보기
  38. Kumar Ananda H. ; Shamouilian Shamouil, Multielectrode electrostatic chuck with fuses.
    상세보기
  39. Canfeng Lai ; Michael Santiago Cox ; Michael Barnes ; Lily L. Pang, Plasma assisted semiconductor substrate processing chamber having a plurality of ground path bridges.
    상세보기
  40. Roderick Craig A. ; Grimard Dennis S., Plasma chamber support having an electrically coupled collar ring.
    상세보기
  41. Shamouil Shamouilian ; Arnold Kholodenko ; Kwok Manus Wong ; Liang-Guo Wang ; Alexander M. Veytser ; Dennis S. Grimard, Plasma chamber support having dual electrodes.
    상세보기
  42. Shamouil Shamouilian ; Jon M. McChesney ; Kwok Manus Wong ; Liang-Guo Wang ; Alexander M. Veytser ; Dennis S. Grimard, Plasma chamber support with coupled electrode.
    상세보기
  43. Hasegawa Makoto (Kawasaki JPX) Sakima Hiromi (Machida JPX) Kanbara Hiromitsu (Kawasaki JPX) Ishikawa Yoshio (Kofu JPX) Imamura Yasuo (Yokohama JPX) Aoki Makoto (Tama JPX), Plasma etching apparatus.
    상세보기
  44. Kikuchi, Akihiro; Kayamori, Satoshi; Shima, Shinya; Sakamoto, Yuichiro; Higuchi, Kimihiro; Oohashi, Kaoru; Ueda, Takehiro; Shibuya, Munehiro; Gondai, Tadashi, Plasma procesor and plasma processing method.
    상세보기
  45. Moriya Shuji (Yamanashi JPX) Ogasawara Masahiro (Tokyo JPX) Yashiro Jun (Yokohama JPX) Tahara Yoshifumi (Tokyo JPX) Kawakami Satoru (Sagamihara JPX) Tanaka Susumu (Tokyo JPX), Plasma process system and method.
    상세보기
  46. Hasegawa Makoto (Kawasaki JPX) Matsushita Takaya (Yokohama JPX) Horioka Keiji (Kawasaki JPX) Hasegawa Isahiro (Zushi JPX) Nozawa Toshihisa (Kobe JPX) Ishikawa Yoshio (Tokyo JPX) Hiratsuka Masahito (K, Plasma processing apparatus.
    상세보기
  47. Ishii Nobuo (Yamanashi-ken JPX), Plasma processing apparatus.
    상세보기
  48. Koshiishi Akira,JPX ; Ogasawara Masahiro,JPX ; Hirose Keizo,JPX ; Nagaseki Kazuya,JPX ; Tomoyoshi Riki,JPX ; Aoki Makoto,JPX, Plasma processing apparatus.
    상세보기
  49. Tsukamoto Yuji,JPX, Plasma processing apparatus.
    상세보기
  50. Arasawa Masashi (Enzan JPX) Ono Katsuhiko (Yamanashi JPX) Nishikawa Hiroshi (Tokyo JPX) Tsuchiya Kazuo (Tokyo JPX), Plasma processing apparatus and method.
    상세보기
  51. Yokota Takashi (Yokohama JPX) Kamikanda Osamu (Yokohama JPX), Plasma processing apparatus using capacitance manometer and pressure control method thereof.
    상세보기
  52. Komino,Mitsuaki; Sasaki,Yasuharu; Tsuboi,Kyo; Amano,Hideaki, Plasma processing apparatus, and electrode structure and table structure of processing apparatus.
    상세보기
  53. Koshiishi, Akira, Plasma processing apparatus, plasma processing method, focus ring, and focus ring component.
    상세보기
  54. Arai Izumi,JPX ; Tahara Yoshifumi,JPX ; Nishikawa Hiroshi,JPX ; Mitano Yoshinobu ; Iimuro Shunichi,JPX ; Fukasawa Kazuo,JPX ; Miura Yutaka,JPX ; Hosoda Shozo,JPX, Plasma processing method and plasma processing apparatus.
    상세보기
  55. Higuchi Kimihiro,JPX ; Koshimizu Chishio,JPX ; Koshi Ryoichiro,JPX ; Iwata Teruo,JPX ; Ishii Nobuo,JPX, Plasma processing method, plasma processing apparatus, and plasma generating apparatus.
    상세보기
  56. Kikuchi, Akihiro; Kayamori, Satoshi; Shima, Shinya; Sakamoto, Yuichiro; Higuchi, Kimihiro; Oohashi, Kaoru; Ueda, Takehiro; Shibuya, Munehiro; Gondai, Tadashi, Plasma processor and plasma processing method.
    상세보기
  57. Kikuchi, Akihiro; Kayamori, Satoshi; Shima, Shinya; Sakamoto, Yuichiro; Higuchi, Kimihiro; Oohashi, Kaoru; Ueda, Takehiro; Shibuya, Munehiro; Gondai, Tadashi, Plasma processor and plasma processing method.
    상세보기
  58. Deguchi Yoichi (Machida JPX) Kawakami Satoru (Sagamihara JPX) Koyama Shiro (Fuchu JPX) Ishikawa Kenji (Sagamihara JPX), Plasma treatment apparatus having a workpiece-side electrode grounding circuit.
    상세보기
  59. Jeong-hyuck Park KR; Hee-duk Kim KR; Jung-hun Cho KR; Jong-wook Choi KR; Sung-bum Cho KR; Young-koo Lee KR; Jin-sung Kim KR; Jang-eun Lee KR; Ju-hyuck Chung KR; Sun-hoo Park KR; Jae-hyun Le, Process chamber used in manufacture of semiconductor device, capable of reducing contamination by particulates.
    상세보기
  60. Kawakami, Satoru, Processing apparatus having dielectric plates linked together by electrostatic force.
    상세보기
  61. Collins Kenneth ; Roderick Craig ; Buchberger Douglas ; Trow John ; Shel Viktor, RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control.
    상세보기
  62. Ohmi Tadahiro (1-17-301 ; Komegabukuro 2-chome Aoba-ku ; Sendai-shi ; Miyagi-ken 980 JPX) Shibata Tadashi (Sendai JPX) Umeda Masaru (Tokyo JPX), Reduced pressure surface treatment apparatus.
    상세보기
  63. Chu Paul K.,HKX ; Chan Chung, Removable liner design for plasma immersion ion implantation.
    상세보기
  64. Koshiishi, Akira; Hashimoto, Mitsuru; Tanaka, Hideaki; Tahara, Shigeru; Hinata, Kunihiko; Ooyabu, Jun, Ring mechanism, and plasma processing device using the ring mechanism.
    상세보기
  65. Kholodenko Arnold ; Mak Steve S.Y., Self-cleaning focus ring.
    상세보기
  66. Kanno, Seiichiro; Kawahara, Hironobu; Suehiro, Mitsuru; Kanai, Saburo; Yoshioka, Ken, Semiconductor wafer processing apparatus and method.
    상세보기
  67. Tony P. Chiang ; Karl F. Leeser, Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD).
    상세보기
  68. Dhindsa, Rajinder; Lenz, Eric, Showerhead electrode design for semiconductor processing reactor.
    상세보기
  69. Ishikawa Kenji (Sagamihara JPX) Komino Mitsuaki (Tokyo JPX) Mitui Tadashi (Yamanashi JPX) Iwata Teruo (Nirasaki JPX) Arai Izumi (Yokohama JPX) Tahara Yoshifumi (Tokyo JPX), Stage having electrostatic chuck and plasma processing apparatus using same.
    상세보기
  70. Su Yin-Jia (Cupertino CA), Stationary focus ring for plasma reactor.
    상세보기
  71. Park, Eui-Jin; Choi, Yun-Ho; Park, In-Young; Jeong, Hwan-Il; Choi, Sung-Sok, Structure for preventing gap formation and plasma processing equipment having the same.
    상세보기
  72. Tamura Naoyuki,JPX ; Takahashi Kazue,JPX ; Ito Youichi,JPX ; Ogawa Yoshifumi,JPX ; Shichida Hiroyuki,JPX ; Tsubone Tsunehiko,JPX, Substrate holding system including an electrostatic chuck.
    상세보기
  73. Matyushkin, Alexander; Koosau, Dennis; Panagopoulos, Theodoros; Holland, John, Substrate support with electrostatic chuck having dual temperature zones.
    상세보기
  74. Gerhard M. Schneider ; Hamid Noorbakhsh ; Bryan Pu ; Kaushik Vaidya ; Brad Leroy Mays ; Hung Dao ; Evans Lee ; Hongging Shan, Support assembly with thermal expansion compensation.
    상세보기
  75. John E. Daugherty ; Neil Benjamin ; Jeff Bogart ; Vahid Vahedi ; David Cooperberg ; Alan Miller ; Yoko Yamaguchi JP, Techniques for improving etch rate uniformity.
    상세보기
  76. Fischer,Andreas; Loewenhardt,Peter, Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift.
    상세보기
  77. Fink, Steven T.; Strang, Eric J., Thermally zoned substrate holder assembly.
    상세보기
  78. Fink,Steven T.; Strang,Eric J., Thermally zoned substrate holder assembly.
    상세보기
  79. Komino Mitsuaki (Tokyo JPX), Treatment apparatus control method.
    상세보기
  80. Komino Mitsuaki (Tokyo JPX), Treatment apparatus control method.
    상세보기
  81. McMillin Brian ; Barnes Michael ; Berney Butch ; Nguyen Huong, Variable high temperature chuck for high density plasma chemical vapor deposition.
    상세보기
  82. Kanno,Seiichiro; Yoshioka,Ken; Nishio,Ryoji; Kanai,Saburou; Kihara,Hideki; Okuda,Koji, Wafer processing method.
    상세보기

관련 콘텐츠

저작권 관리 안내
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로