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High quality silicon oxide films by remote plasma CVD from disilane precursors 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/02
출원번호 US-0876538 (2007-10-22)
등록번호 US7867923 (2010-12-28)
발명자 / 주소
  • Mallick, Abhijit Basu
  • Nemani, Srinivas D.
  • Yieh, Ellie
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Townsend and Townsend and Crew
인용정보 피인용 횟수 : 48  인용 특허 : 80

초록 ▼

A method of depositing a silicon and nitrogen containing film on a substrate. The method includes introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms. The method further includes g

대표청구항 ▼

What is claimed is: 1. A method of depositing a silicon and nitrogen containing film on a substrate, the method comprising:introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms;gener

이 특허에 인용된 특허 (80)

  1. Cheung, Jeff S.; Demos, Alexandros T., Apparatus and process for controlling the temperature of a substrate in a plasma reactor.
    상세보기
  2. Davis Cecil J. (Greenville TX) Matthews Robert T. (Plano TX), Apparatus for transferring workpieces.
    상세보기
  3. Anderson, Roger N.; Comita, Paul B.; Waldhauer, Ann; Riley, Norma B., Apparatuses and methods for depositing an oxide film.
    상세보기
  4. Janakiraman, Karthik; Suarez, Edwin C., Blocker plate by-pass for remote plasma clean.
    상세보기
  5. Zhao Jun (Milpitas CA) Cho Tom (San Francisco CA) Dornfest Charles (Fremont CA) Wolff Stefan (Sunnyvale CA) Fairbairn Kevin (Saratoga CA) Guo Xin S (Mountain View CA) Schreiber Alex (Santa Clara CA) , CVD Processing chamber.
    상세보기
  6. Zhao Jun ; Cho Tom ; Dornfest Charles ; Wolff Stefan ; Fairbairn Kevin ; Guo Xin Sheng ; Schreiber Alex ; White John M., CVD processing chamber.
    상세보기
  7. Todd, Michael A., CVD syntheses of silicon nitride materials.
    상세보기
  8. Witek Keith E. ; Chen Mike Hsiao-Hui ; Poon Stephen Shiu-Kong, Capped shallow trench isolation and method of formation.
    상세보기
  9. Hanahata, Hiroyuki; Araki, Toru; Nakamura, Mikihiko, Coating composition for the production of insulating thin films.
    상세보기
  10. Thakur Randhir P. S. ; Deboer Scott J., Conditioning of dielectric materials.
    상세보기
  11. Mallick, Abhijit Basu; Nemani, Srinivas D.; Weidman, Timothy W., Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp II process.
    상세보기
  12. Moghadam Farhad K. (Los Gatos CA), Dielectric deposition and cleaning process for improved gap filling and device planarization.
    상세보기
  13. Law Kam S. ; Robertson Robert M. ; Shang Quanyuan ; Olsen Jeff ; Sorensen Carl, Dual frequency excitation of plasma for film deposition.
    상세보기
  14. Solomon, Glenn S.; Miller, David J.; Ueda, Tetsuzo, Epitaxial film produced by sequential hydride vapor phase epitaxy.
    상세보기
  15. Gauri, Vishal; Humayun, Raashina; Lang, Chi I; Huang, Judy H.; Barnes, Michael; Shanker, Sunil, Flowable film dielectric gap fill process.
    상세보기
  16. Mallick,Abhijit Basu; Munro,Jeffrey C.; Nemani,Srinivas D., Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II--remote plasma enhanced deposition processes.
    상세보기
  17. Vaudo Robert P. ; Redwing Joan M. ; Tischler Michael A. ; Brown Duncan W., GaN-based devices using (Ga, AL, In)N base layers.
    상세보기
  18. Bayman, Atiye; Rahman, Md Sazzadur; Zhang, Weijie; van Schravendijk, Bart; Gauri, Vishal; Papasoulitotis, George D.; Singh, Vikram, Gap fill for high aspect ratio structures.
    상세보기
  19. Visokay,Mark R.; Rotondaro,Antonio L. P.; Colombo,Luigi, Gate dielectric and method.
    상세보기
  20. Kobayashi, Junko; Goetz, Werner K., Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers.
    상세보기
  21. Raaijmakers, Ivo; Werkhoven, Christiaan, In situ dielectric stacks.
    상세보기
  22. Li Haojiang ; Wu Robert W., Independent gas feeds in a plasma reactor.
    상세보기
  23. Oh, Yong-chul; Jin, Gyo-young, Integrated circuit devices including an isolation region defining an active region area and methods for manufacturing the same.
    상세보기
  24. Karthik Janakiraman ; Kelly Fong ; Chen-An Chen ; Paul Le ; Rong Pan ; Shankar Venkataraman, Integration of remote plasma generator with semiconductor processing chamber.
    상세보기
  25. Hsia Shaw-Tzeng (Taipei TWX) Chen Kuang-Chao (Taipei TWX), Inter-metal-dielectric planarization process.
    상세보기
  26. O'Neill, Mark Leonard; Peterson, Brian Keith; Vincent, Jean Louise; Vrtis, Raymond Nicholas, Low dielectric constant material and method of processing by CVD.
    상세보기
  27. Rose, Peter; Lopata, Eugene; Felts, John, Low κ dielectric inorganic/organic hybrid films and method of making.
    상세보기
  28. Hasebe,Kazuhide; Endoh,Atsushi; Suzuki,Daisuke; Suzuki,Keisuke, Method and apparatus for forming silicon oxide film.
    상세보기
  29. Mallick, Abhijit Basu; Munro, Jeffrey C.; Wang, Linlin; Nemani, Srinivas D.; Zheng, Yi; Yuan, Zheng; Lubomirsky, Dimitry; Yieh, Ellie Y., Method and system for improving dielectric film quality for void free gap fill.
    상세보기
  30. Mahanpour, Mehrdad; Massoodi, Mohammad; Hulog, Jose, Method and system for reducing polymer build up during plasma etch of an intermetal dielectric.
    상세보기
  31. Papasouliotis,George D.; Tarafdar,Raihan M.; Rulkens,Ron; Hausmann,Dennis M.; Tobin,Jeff; Tipton,Adrianne K.; Nie,Bunsen, Method for controlling properties of conformal silica nanolaminates formed by rapid vapor deposition.
    상세보기
  32. Harvey, Keith R.; Lim, Tian-Hoe; Xia, Li-Qun, Method for densification of CVD carbon-doped silicon oxide films through UV irradiation.
    상세보기
  33. Munro, Jeffrey C.; Nemani, Srinivas D., Method for depositing and curing low-k films for gapfill and conformal film applications.
    상세보기
  34. Li Li ; Thakur Randhir ; Hawthorne Richard C., Method for forming a dielectric.
    상세보기
  35. Perera Asanga H., Method for forming a trench isolation structure in an integrated circuit.
    상세보기
  36. Perera, Asanga H., Method for forming a trench isolation structure in an integrated circuit.
    상세보기
  37. Park,Jae eun; Chu,Kang soo; Lee,Joo won; Yang,Jong ho, Method for forming silicon dioxide film using siloxane.
    상세보기
  38. Iyechika Yasushi (Ibaraki JPX) Takada Tomoyuki (Ibaraki JPX), Method for manufacturing group III-V compound semiconductor crystals.
    상세보기
  39. Stringfellow Gerald B. (Palo Alto CA) Hall ; Jr. Howard T. (Palo Alto CA), Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a.
    상세보기
  40. Papasouliotis, George D.; Tas, Robert D., Method of chemical modification of structure topography.
    상세보기
  41. Li,Li; Li,Weimin, Method of eliminating residual carbon from flowable oxide fill.
    상세보기
  42. Hashimoto, Shigeki, Method of fabricating group III-V nitride compound semiconductor and method of fabricating semiconductor device.
    상세보기
  43. Vassiliev Vladislav,SGX ; Peidous Igor,SGX, Method of filling shallow trenches.
    상세보기
  44. Oh Yong-chul,KRX ; Park Young-Woo,KRX, Method of forming an isolation trench in a semiconductor device including annealing at an increased temperature.
    상세보기
  45. Agarwal Vishnu K. ; Derderian Garo J. ; Sandhu Gurtej S., Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell.
    상세보기
  46. Wang Larry Yu, Method of forming trench isolation with high integrity, ultra thin gate oxide.
    상세보기
  47. Wai-Fan Yau ; David Cheung ; Nasreen Gazala Chopra ; Yung-Cheng Lu ; Robert Mandal ; Farhad Moghadam, Method of improving moisture resistance of low dielectric constant films.
    상세보기
  48. Ross, Matthew, Method of processing films prior to chemical vapor deposition using electron beam processing.
    상세보기
  49. Sandhu Gurtej S. (Boise ID), Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor com.
    상세보기
  50. Karim, M. Ziaul; Moghadam, Farhad K.; Salimian, Siamak, Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation.
    상세보기
  51. Liang, Jingmei, Methods for forming a dielectric layer within trenches.
    상세보기
  52. Michael T. Carter ; William J. Donahue, Methods for low and ambient temperature preparation of precursors of compounds of group III metals and group V elements.
    상세보기
  53. Maes, Jan Willem, Methods of depositing two or more layers on a substrate in situ.
    상세보기
  54. Chen, David; Shepherd, Jr., Robert A.; Gauri, Vishal; Papasouliotis, George D., Multi-step deposition and etch back gap fill process.
    상세보기
  55. Wakino Kikuo (Muko JPX) Mandai Harufumi (Takatsuki JPX), Multilayer printed circuit board.
    상세보기
  56. Umotoy Salvador P. ; Lei Lawrence C. ; Nguyen Anh N. ; Chiao Steve H., One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system.
    상세보기
  57. Sakuma, Takeshi, Photo-excited gas processing apparatus for semiconductor process.
    상세보기
  58. Han, Qingyuan; Berry, Ivan; Sakthivel, Palani; Waldfried, Carlo, Plasma ashing process.
    상세보기
  59. Reichelderfer ; deceased Richard F. (late of Pleasanton CA by Desire Reichelderfer ; legal representative) McOmber Janice I. (Redwood City CA) Ryan Andrew P. (Napa CA) Davies John T. (El Sobrante CA), Plasma reactor and process with wafer temperature control.
    상세보기
  60. Miller,Gayle; Brown,Eric, Polish stop and sealing layer for manufacture of semiconductor devices with deep trench isolation.
    상세보기
  61. Joret, Laurent, Process for depositing at least one thin layer based on silicon nitride or oxynitride on a transparent substrate.
    상세보기
  62. Suzuki,Shinji, Process for producing a film for controlling the chemotactic function and an artificial material and process for producing the artificial material.
    상세보기
  63. Yaxin Wang ; Diana Chan ; Turgut Sahin ; Tetsuya Ishikawa ; Farhad Moghadam, Process gas distribution for forming stable fluorine-doped silicate glass and other films.
    상세보기
  64. Liu Jiann (Irving TX) Davis Cecil J. (Greenville TX) Loewenstein Lee M. (Plano TX), Processing apparatus.
    상세보기
  65. Moslehi Mehrdad M. (Dallas TX), Real-time multi-zone semiconductor wafer temperature and process uniformity control system.
    상세보기
  66. Gardner Mark I. ; Gilmer Mark C., Semiconductor trench isolation structure formed substantially within a single chamber.
    상세보기
  67. Orczyk Maciek ; Murugesh Laxman ; Narwankar Pravin, Sequencing of the recipe steps for the optimal low-k HDP-CVD processing.
    상세보기
  68. Tarafdar,Raihan M.; Papasouliotis,George D.; Rulkens,Ron; Hausmann,Dennis M.; Tobin,Jeff; Tipton,Adrianne K.; Nie,Bunsen, Sequential deposition/anneal film densification method.
    상세보기
  69. Moghadam,Farhad K.; Cox,Michael S.; Krishnaraj,Padmanabhan; Pham,Thanh N., Sequential gas flow oxide deposition technique.
    상세보기
  70. Kumagai, Akira; Ishibashi, Keiji; Mori, Shigeru, Silicon oxide film formation method.
    상세보기
  71. Hsia Liang-Choo,TWX ; Chang Thomas,TWX, Stacked capacitor having improved charge storage capacity.
    상세보기
  72. Aoyama,Shintaro; Igeta,Masanobu; Shinriki,Hiroshi, Substrate processing method and a computer readable storage medium storing a program for controlling same.
    상세보기
  73. Ono Tetsuo (Kokubunji JPX) Hiraoka Susumu (Kokubunji JPX) Suzuki Keizo (Kodaira JPX), Surface fabricating device.
    상세보기
  74. Okaue Etsuo (Nagano-ken JPX) Nakajima Mikito (Nagano-ken JPX) Kubota Satoshi (Nagano-ken JPX) Mogami Takao (Nagano-ken JPX), Synthetic resin ophthalmic lens having an inorganic coating.
    상세보기
  75. Dorenbeck, Claus; Van Essen, Robert Joannes, System for securing data on a data carrier.
    상세보기
  76. Thomas, Michael E., Thermal oxidation method utilizing atomic oxygen to reduce dangling bonds in silicon dioxide grown on silicon.
    상세보기
  77. Haukka,Suvi P.; Raaijmakers,Ivo; Li,Wei Min; Kostamo,Juhana; Sprey,Hessel, Thin films.
    상세보기
  78. Rossman, Kent; Li, Zhuang; Lee, Young, Trench fill with HDP-CVD process including coupled high power density plasma deposition.
    상세보기
  79. Harvey, Keith R.; Lim, Tian-Hoe; Xia, Li-Qun, UV radiation source for densification of CVD carbon-doped silicon oxide films.
    상세보기
  80. Waldfried, Carlo; Han, Qingyuan; Escorcia, Orlando; Berry, III, Ivan L., Ultraviolet curing processes for advanced low-k materials.
    상세보기

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AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

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