초록 ▼

In a known process for producing a quartz glass cylinder, a porous soot tube, which is sintered to form the quartz glass cylinder, is produced by depositing SiO2 particles on an outer cylindrical surface of a support, which rotates about the longitudinal axis thereof and has a layer of silicon carbi

In a known process for producing a quartz glass cylinder, a porous soot tube, which is sintered to form the quartz glass cylinder, is produced by depositing SiO2 particles on an outer cylindrical surface of a support, which rotates about the longitudinal axis thereof and has a layer of silicon carbide (SiC layer). In order on this basis to specify a support having a high resistance to fracture, which firstly can easily be removed and which secondly presents a low risk of contamination for the soot body, the invention proposes that the SiC layer is treated at a high temperature in an oxygen-containing atmosphere before the SiO2 particles are deposited, in such a manner that an SiO2 protective layer having a thickness of at least 0.1 μm is produced by oxidation.

대표청구항 ▼

1. A method for producing a quartz glass cylinder, said method comprising producing a porous soot tube by depositing SiO2 particles on a cylinder jacket surface of a support rotating about a longitudinal axis thereof and having a SiC layer, andsintering the soot tube so as to form the quartz glass c

1. A method for producing a quartz glass cylinder, said method comprising producing a porous soot tube by depositing SiO2 particles on a cylinder jacket surface of a support rotating about a longitudinal axis thereof and having a SiC layer, andsintering the soot tube so as to form the quartz glass cylinder, andtreating the SiC layer prior to deposition of the SiO2 particles at a high temperature in an oxygen-containing atmosphere such that a SiO2 barrier layer with a thickness of at least 0.1 μm is produced by oxidation. 2. The method according to claim 1, wherein the SiC layer consists essentially of a silicon infiltrated silicon carbide (SiSiC). 3. The method according to claim 1, wherein the treatment in oxygen-containing atmosphere comprises annealing the support in a furnace or heating the support using an oxygen- or hydrogen-containing burner flame at a temperature of at least 1000° C. 4. The method according to claim 1, wherein the SiO2 barrier layer is produced with a thickness in the range of 1 μm to 10 μm. 5. The method according to claim 1, wherein the SiO2 barrier layer contains cristobalite. 6. The method according to claim 5, wherein the SiO2 barrier layer comprises layer portions of amorphous SiO2. 7. The method according to claim 1, wherein the treatment in oxygen-containing atmosphere comprises annealing the support in a furnace or heating the support using an oxygen- or hydrogen-containing burner flame at a temperature of at least 1200° C.