[미국특허]
Dummy substrate, and start method of, retention/modification method of deposition condition, and stop method of deposition apparatus using same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C23C-014/00
C25B-011/00
C25B-013/00
C23C-014/34
C23C-014/56
출원번호
US-0596303
(2008-04-16)
등록번호
US-9011654
(2015-04-21)
우선권정보
JP-P2007-109275 (2007-04-18)
국제출원번호
PCT/JP2008/057423
(2008-04-16)
§371/§102 date
20100303
(20100303)
국제공개번호
WO2008/133139
(2008-11-06)
발명자
/ 주소
Ishino, Koji
Nakamura, Hajime
Matsuda, Mayako
Shindou, Takaaki
Kikuchi, Yukio
출원인 / 주소
Ulvac, Inc.
대리인 / 주소
Grossman, Tucker, Perreault & Pfleger, PLLC
인용정보
피인용 횟수 :
0인용 특허 :
3
초록▼
This dummy substrate is for use in an inline reactive sputtering apparatus. The main unit thereof is made of a rectangular-plate-like frame structure in which an opening portion in a rectangular shape is formed in a metal plate in a similar shape. It is configured such that a contact portion of a ca
This dummy substrate is for use in an inline reactive sputtering apparatus. The main unit thereof is made of a rectangular-plate-like frame structure in which an opening portion in a rectangular shape is formed in a metal plate in a similar shape. It is configured such that a contact portion of a carrier with the main unit is covered with the main unit. As a result, even while the sputtering apparatus is in operation, there is no possibility of the occurrence of undesirable situations such as glass cracking, making it possible to significantly increase the number of times the dummy substrate is used. Furthermore, the dummy substrate continues to cover the contact portion with the carrier. Thereby, it is possible to prevent deposition of a substance left in a sputter deposition chamber, especially a compound thin film, on the contact portion of the carrier with the substrate. Therefore, it is possible to prevent undesirable situations such as an abnormal discharge due to the deposition of the compound thin film. As a result of these, it is possible to start (activate) an apparatus that deposits a compound thin film by the sputtering method, retain and modify a deposition condition in the apparatus, and stop (deactivate) the apparatus in a shorter time, and more efficiently and at a lower cost than before.
대표청구항▼
1. A dummy substrate for use in an apparatus where a plurality of transfer devices for holding substrates are arranged in a sputter deposition chamber in a line along one direction on surfaces of the substrates and where a compound thin film is deposited on the surfaces of the substrates by a sputte
1. A dummy substrate for use in an apparatus where a plurality of transfer devices for holding substrates are arranged in a sputter deposition chamber in a line along one direction on surfaces of the substrates and where a compound thin film is deposited on the surfaces of the substrates by a sputtering method in a state with the transfer devices being sequentially moved or being stationary, the dummy substrate being used instead of any one of the held substrates, comprising: a main unit portion having a first part including a metal frame defining a perimeter of an opening extending through a thickness of said first part, said opening disposed at the center of the main unit portion, the metal frame having a generally rectangular-plate-like frame structure, the opening having a generally rectangular shape generally corresponding to an outer peripheral shape of the metal frame;wherein each edge of the perimeter of the first part has a plurality of circular discrete areas onto which adsorption pads of the transfer devices is configured to adsorb, the plurality of discrete areas having a surface roughness Ra of no more than 3.2 μm and being formed at only positions corresponding to positions of the adsorption pads. 2. The dummy substrate according to claim 1, wherein the main unit portion of the dummy substrate used instead of the held substrates has an outer peripheral shape equivalent to that of the held substrates, and has a weight equivalent to that of the held substrates. 3. The dummy substrate according to Claim 1, further comprising: a pair of bars crossed each other along a surface of the first part and provided in the opening of the main unit portion. 4. A start method of a deposition comprising: arranging, in a sputter deposition chamber, a plurality of transfer devices holding a plurality of dummy substrates in a line along one direction on surfaces of the dummy substrates, wherein each of said dummy substrates comprises a main unit portion having a first part including a metal frame defining a perimeter of an opening extending through a thickness of said first part, said opening disposed at the center of the main unit portion, the metal frame having a generally rectangular-plate-like frame strcuture, the opening having a generally rectangular shape generally corresponding to an outer peripheral shape of the metal frame, wherein each edge of the perimeter of the first part has a plurality of circular discrete areas onto which adsorption pads of the transfer devices is configured to adsorb, the plurality of discrete areas having a surface roughness Ra of no more than 3.2 μm and being formed at only positions corresponding to positions of the adsorption pads;changing a deposition condition in a state with the transfer devices being sequentially moved or being stationary; andthen stabilizing the deposition condition into a desired deposition condition. 5. A method of retaining or modifying a deposition condition in a deposition apparatus comprising: causing a plurality of transfer devices to hold a plurality of dummy substrates after a main sputtering, wherein each of said dummy substrates comprisesa main unit portion having a first part including a metal frame defining a perimeter of an opening extending through a thickness of said first part, said opening disposed at the center of the main unit portion, the metal frame having a generally rectangular-plate-like frame structure, the opening having a generally rectangular shape generally corresponding to an outer peripheral shape of the metal frame, wherein each edge of the perimeter of the first part has a plurality of circular discrete areas onto which adsorption pads of the transfer devices is configured to adsorb, the plurality of discrete areas having a surface roughness Ra of no more than 3.2 μm and being formed at only positions corresponding to positions of the adsorption pads;arranging, in a sputter deposition chamber, the transfer devices holding the dummy substrates in a line along one direction on surfaces of the dummy substrates;retaining or modifying a deposition condition in a state with the transfer devices being sequentially moved or being stationary; andthen replacing the dummy substrates with desired substrates, and performing a main sputtering. 6. A stop method of a depositiong comprising: arranging, in a sputter deposition chamber, a plurality of transfer devices holding a plurality of dummy substrates in a line along one direction on surfaces of the dummy substrates, wherein each of said dummy substrates comprises a main unit portion having a first part including a metal frame defining a perimeter of an opening extending through a thickness of said first parts, said opening disposed at the center of the main unit portion, the metal frame having a generally rectangular-plate-like frame structure, the opening having a generally rectangular shape generally corresponding to an outer peripheral shape of the metal frame, wherein each edge of the perimeter of the first part has a plurality of circular discrete areas onto which adsorption pads of the transfer devices is configured to adsorb, the plurality of discrete areas having a surface roughness Ra of no more than 3.2 μm and being formed at only positions corresponding to positions of the adsorption pads;cooling an inside of the sputter deposition chamber in a state with the transfer devices being sequentially moved or being stationary; andthen stopping the deposition apparatus.
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