[특허]Surface treatment and deposition for reduced outgassing

[미국특허] Surface treatment and deposition for reduced outgassing 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	B05D-003/04 H05H-001/24 C23C-016/40 C23C-016/455 H01L-021/02 C23C-016/34 C23C-016/452 C23C-016/505 C23C-016/56
출원번호	US-0494341 (2012-06-12)
등록번호	US-9404178 (2016-08-02)
발명자 / 주소	Liang, Jingmei Chen, Xiaolin Ingle, Nitin K. Venkataraman, Shankar
출원인 / 주소	Applied Materials, Inc.
대리인 / 주소	Kilpatrick Townsend & Stockton LLP
인용정보	피인용 횟수 : 1 인용 특허 : 191

초록 ▼

A method of forming a dielectric layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) layer by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing layer is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A silicon oxide capping layer may be formed from a portion of the carbon-free silicon-nitrogen-and-hydrogen-containing layer to avoid time-evolution of underlying layer properties prior to conversion into silicon oxide. Alternatively, the silicon oxide capping layer is formed over the silicon-nitrogen-and-hydrogen-containing layer. Either method of formation involves the formation of a local plasma within the substrate processing region.

대표청구항 ▼

1. A method of forming a dielectric layer on a substrate, the method comprising the sequential steps of: forming a carbon-free silicon-nitrogen-and-hydrogen-containing layer on the substrate in a first substrate processing region containing the substrate by: flowing an unexcited precursor into a remote plasma region to produce a radical-precursor,combining a carbon-free silicon-containing precursor with the radical-precursor in the first substrate processing region, wherein the first substrate processing region is devoid of plasma during the forming the carbon-free silicon-nitrogen-and-hydrogen-containing layer, anddepositing a carbon-free silicon-nitrogen-and-hydrogen-containing layer over the substrate, wherein the carbon-free silicon-nitrogen-and-hydrogen-containing layer is flowable during deposition and flows into a trench on a deposition surface of the substrate as the carbon-free silicon-nitrogen-and hydrogen-containing layer deposits; andforming a silicon oxide capping layer on the carbon-free silicon-nitrogen-and-hydrogen-containing layer by: flowing an oxygen-containing precursor into a second substrate processing region containing the substrate,flowing a silicon-containing precursor into the second substrate processing region,forming a plasma from the oxygen-containing precursor and the silicon-containing precursor in the second substrate processing region, anddepositing the silicon oxide capping layer over the carbon-free silicon-nitrogen-and-hydrogen-containing layerwherein the dielectric layer comprises the carbon-free silicon-nitrogen-and-hydrogen-containing layer and the silicon oxide capping layer; andconverting the underlying carbon-free silicon-nitrogen-and-hydrogen-containing layer to silicon oxide despite an intervening presence of the silicon oxide capping layer. 2. The method of claim 1 wherein a temperature of the substrate is greater than or about 25° C. and less than or about 125° C. during formation of the carbon-free silicon-nitrogen-and-hydrogen-containing layer. 3. The method of claim 1 wherein the substrate temperature is less than or about 200° C. during formation of the silicon oxide capping layer. 4. The method of claim 1 wherein a thickness of the silicon oxide capping layer is about 10 nm or more. 5. The method of claim 1 wherein the unexcited precursor comprises nitrogen and the radical precursor is a radical-nitrogen precursor. 6. The method of claim 1 wherein the unexcited precursor comprises at least one of N2H2, NH3, N2 and H2 and the carbon-free silicon-containing precursor comprises one of H2N(SiH3), HN(SiH3)2 or N(SiH3)3. 7. The method of claim 1 wherein the first substrate processing region is the second substrate processing region. 8. The method of claim 1 wherein forming a plasma from the oxygen-containing precursor and the silicon-containing precursor in the second substrate processing region comprises applying a plasma power of below or about 1000 W. 9. The method of claim 1 wherein a thickness of the silicon oxide capping layer is greater than or about 50 nm.

이 특허에 인용된 특허 (191)

Cheung, Jeff S.; Demos, Alexandros T., Apparatus and process for controlling the temperature of a substrate in a plasma reactor.
상세보기
van de Ven Everhardus P. ; Broadbent Eliot K. ; Benzing Jeffrey C. ; Chin Barry L. ; Burkhart Christopher W. ; Lane Lawrence C. ; McInerney Edward John, Apparatus for preventing deposition on frontside peripheral region and edge of wafer in chemical vapor deposition appar.
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van de Ven Everhardus P. (Saratoga CA) Broadbent Eliot K. (San Jose CA) Benzing Jeffrey C. (Saratoga CA) Chin Barry L. (Saratoga CA) Burkhart Christopher W. (Los Gatos CA), Apparatus for supporting a substrate and introducing gas flow doximate to an edge of the substrate.
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Davis Cecil J. (Greenville TX) Matthews Robert T. (Plano TX), Apparatus for transferring workpieces.
상세보기
Anderson, Roger N.; Comita, Paul B.; Waldhauer, Ann; Riley, Norma B., Apparatuses and methods for depositing an oxide film.
상세보기
Janakiraman, Karthik; Suarez, Edwin C., Blocker plate by-pass for remote plasma clean.
상세보기
Zhao Jun (Milpitas CA) Cho Tom (San Francisco CA) Dornfest Charles (Fremont CA) Wolff Stefan (Sunnyvale CA) Fairbairn Kevin (Saratoga CA) Guo Xin S (Mountain View CA) Schreiber Alex (Santa Clara CA) , CVD Processing chamber.
상세보기
Lang, Chi-I; Huang, Judy H.; Barnes, Michael; Shanker, Sunil, CVD flowable gap fill.
상세보기
Cheung, David; Yau, Wai-Fan; Mandal, Robert R., CVD plasma assisted low dielectric constant films.
상세보기
Zhao Jun ; Cho Tom ; Dornfest Charles ; Wolff Stefan ; Fairbairn Kevin ; Guo Xin Sheng ; Schreiber Alex ; White John M., CVD processing chamber.
상세보기
Todd, Michael A., CVD syntheses of silicon nitride materials.
상세보기
Witek Keith E. ; Chen Mike Hsiao-Hui ; Poon Stephen Shiu-Kong, Capped shallow trench isolation and method of formation.
상세보기
Weidman, Timothy; Nault, Michael P; Chang, Josephine J, Capping layer for extreme low dielectric constant films.
상세보기
Wang, Linlin; Mallick, Abhijit Basu; Ingle, Nitin K., Capping layer for reduced outgassing.
상세보기
Cohen Stephan A. (Wappingers Falls NY) McGahay Vincent J. (Poughkeepsie NY) Uttecht Ronald R. (Essex Junction VT), Carbon-free hydrogen silsesquioxane with dielectric constant less than 3.2 annealed in hydrogen for integrated circuits.
상세보기
Sahin, Turgut; Wang, Yaxin; Xi, Ming, Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI application.
상세보기
Ingle, Nitin K.; Yuan, Zheng; Gee, Paul; Sapre, Kedar, Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen.
상세보기
Hanahata, Hiroyuki; Araki, Toru; Nakamura, Mikihiko, Coating composition for the production of insulating thin films.
상세보기
Minato Mitsuaki (Kanagawa JPX) Uehara Akira (Kanagawa JPX) Matsushita Atsushi (Kanagawa JPX), Coaxial plasma processing apparatus.
상세보기
Thakur Randhir P. S. ; Deboer Scott J., Conditioning of dielectric materials.
상세보기
Liang, Jingmei; Chen, Xiaolin; Li, DongQing; Ingle, Nitin K., Conformal layers by radical-component CVD.
상세보기
Seitz, Mihel; Knorr, Andreas; McStay, Irene, Control of separation between transfer gate and storage node in vertical DRAM.
상세보기
Mallick, Abhijit Basu; Nemani, Srinivas D.; Weidman, Timothy W., Curing methods for silicon dioxide multi-layers.
상세보기
Mallick, Abhijit Basu; Nemani, Srinivas D.; Weidman, Timothy W., Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp II process.
상세보기
Li, Shijian; Wang, Yaxin; Redeker, Fred C.; Ishikawa, Tetsuya; Collins, Alan W., Deposition chamber and method for depositing low dielectric constant films.
상세보기
Chen, Xiaolin; Nemani, Srinivas D.; Venkataraman, Shankar, Deposition-plasma cure cycle process to enhance film quality of silicon dioxide.
상세보기
Lee, Woo Jin; Fukazawa, Atsuki; Matsuki, Nobuo, Device isolation technology on semiconductor substrate.
상세보기
Moghadam Farhad K. (Los Gatos CA), Dielectric deposition and cleaning process for improved gap filling and device planarization.
상세보기
Lubomirsky, Dmitry; Nemani, Srinivas D.; Yieh, Ellie, Dielectric deposition and etch back processes for bottom up gapfill.
상세보기
Law Kam S. ; Robertson Robert M. ; Shang Quanyuan ; Olsen Jeff ; Sorensen Carl, Dual frequency excitation of plasma for film deposition.
상세보기
Solomon, Glenn S.; Miller, David J.; Ueda, Tetsuzo, Epitaxial film produced by sequential hydride vapor phase epitaxy.
상세보기
van de Ven Everhardus P. ; Broadbent Eliot K. ; Benzing Jeffrey C. ; Chin Barry L. ; Burkhart Christopher W. ; Lane Lawrence C., Exclusion guard and gas-based substrate protection for chemical vapor deposition apparatus.
상세보기
van de Ven Everhardus P. ; Broadbent Eliot K. ; Benzing Jeffrey C. ; Chin Barry L. ; Burkhart Christopher W. ; Lane Lawrence C. ; McInerney Edward J., Exclusion guard and gas-based substrate protection for chemical vapor deposition apparatus.
상세보기
Hasebe, Kazuhide; Nodera, Nobutake; Lee, Eun-jo, Film formation method and apparatus for semiconductor process.
상세보기
Purayath, Vinod R.; Ingle, Nitin K., Flash gate air gap.
상세보기
Gauri, Vishal; Humayun, Raashina; Lang, Chi I; Huang, Judy H.; Barnes, Michael; Shanker, Sunil, Flowable film dielectric gap fill process.
상세보기
Farhad K. Moghadam ; David W. Cheung ; Ellie Yieh ; Li-Qun Xia ; Wai-Fan Yau ; Chi-I Lang ; Shin-Puu Jeng TW; Frederic Gaillard FR; Shankar Venkataraman ; Srinivas Nemani, Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound.
상세보기
Mallick,Abhijit Basu; Munro,Jeffrey C.; Nemani,Srinivas D., Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II--remote plasma enhanced deposition processes.
상세보기
Liang, Jingmei; Ingle, Nitin K.; Venkataraman, Shankar, Formation of silicon oxide using non-carbon flowable CVD processes.
상세보기
Vaudo Robert P. ; Redwing Joan M. ; Tischler Michael A. ; Brown Duncan W., GaN-based devices using (Ga, AL, In)N base layers.
상세보기
Bayman, Atiye; Rahman, Md Sazzadur; Zhang, Weijie; van Schravendijk, Bart; Gauri, Vishal; Papasoulitotis, George D.; Singh, Vikram, Gap fill for high aspect ratio structures.
상세보기
Ingle,Nitin K.; Wong,Shan; Xia,Xinyun; Banthia,Vikash; Bang,Won B.; Wang,Yen Kun V.; Yuan,Zheng, Gap-fill depositions in the formation of silicon containing dielectric materials.
상세보기
Ingle,Nitin K.; Wong,Shan; Xia,Xinyun; Banthia,Vikash; Bang,Won B.; Wang,Yen Kun V., Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials.
상세보기
van de Ven Everhardus P. ; Broadbent Eliot K. ; Benzing Jeffrey C. ; Chin Barry L. ; Burkhart Christopher W., Gas-based substrate deposition protection.
상세보기
Vladislav Vassiliev SG; John Leonard Sudijono SG; Yelehanka Ramachandramurthy Pradeep SG; Jie Yu SG, Gas-phase additives for an enhancement of lateral etch component during high density plasma film deposition to improve film gap-fill capability.
상세보기
Visokay,Mark R.; Rotondaro,Antonio L. P.; Colombo,Luigi, Gate dielectric and method.
상세보기
Runkowske, Holger; Boness, Jan Dirk; Aslam, Muhammed; Zeise, Eric K., Gloss/density measurement device with feedback to control gloss and density of images produced by an electrographic reproduction apparatus.
상세보기
Kobayashi, Junko; Goetz, Werner K., Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers.
상세보기
Cerny, Glenn Allen; Hwang, Byung Keun; Loboda, Mark Jon, H:SiOC coated substrates.
상세보기
Underwood, Brian Saxton; Mallick, Abhijit Basu; Ingle, Nitin; Gouk, Roman; Verhaverbeke, Steven, HDD patterning using flowable CVD film.
상세보기
Chen,Xiaolin; Bloking,Jason, HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance.
상세보기
Frankel, Jonathan; Ponnekanti, Hari; Shmurun, Inna; Sivaramakrishnan, Visweswaren, Heater/lift assembly for high temperature processing chamber.
상세보기
Mallick, Abhijit Basu; Nemani, Srinivas D.; Yieh, Ellie, High quality silicon oxide films by remote plasma CVD from disilane precursors.
상세보기
Mallick, Abhijit Basu; Nemani, Srinivas D.; Yieh, Ellie, High quality silicon oxide films by remote plasma CVD from disilane precursors.
상세보기
Raaijmakers, Ivo; Werkhoven, Christiaan, In situ dielectric stacks.
상세보기
Entley, William R.; Langan, John G.; Hall, Randy, In situ plasma process to remove fluorine residues from the interior surfaces of a CVD reactor.
상세보기
Wang, Linlin; Mallick, Abhijit Basu; Ingle, Nitin K.; Venkataraman, Shankar, In-situ ozone cure for radical-component CVD.
상세보기
Li Haojiang ; Wu Robert W., Independent gas feeds in a plasma reactor.
상세보기
Denning Dean J. ; Hegde Rama I. ; Garcia Sam S. ; Fiordalice Robert W., Inert plasma gas surface cleaning process performed insitu with physical vapor deposition (PVD) of a layer of material.
상세보기
Oh, Yong-chul; Jin, Gyo-young, Integrated circuit devices including an isolation region defining an active region area and methods for manufacturing the same.
상세보기
West, Jeffrey A, Integrated circuits having TSVs including metal gettering dielectric liners.
상세보기
Nemani, Srinivas D.; Lee, Young S.; Yieh, Ellie Y.; Wang, Anchuan; Bloking, Jason Thomas; Han, Lung Tien, Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD.
상세보기
Karthik Janakiraman ; Kelly Fong ; Chen-An Chen ; Paul Le ; Rong Pan ; Shankar Venkataraman, Integration of remote plasma generator with semiconductor processing chamber.
상세보기
Hsia Shaw-Tzeng (Taipei TWX) Chen Kuang-Chao (Taipei TWX), Inter-metal-dielectric planarization process.
상세보기
Loewenstein Lee M., Isotropic polysilicon plus nitride stripping.
상세보기
Chua Chee Tee,SGX ; Lee Yuan-Ping,SGX ; Zhou Mei Sheng,SGX ; Chan Lap, Laser curing of spin-on dielectric thin films.
상세보기
Lo, Ching-Yu; Tu, Hung-Jung; Chen, Hai-Ching; Bao, Tien-I; Chiou, Wen-Chih; Yu, Chen-Hua, Liner formation in 3DIC structures.
상세보기
Van Autryve Luc,FRX ; Lang Stefan Oswald,DEX, Localizing cleaning plasma for semiconductor processing.
상세보기
O'Neill, Mark Leonard; Peterson, Brian Keith; Vincent, Jean Louise; Vrtis, Raymond Nicholas, Low dielectric constant material and method of processing by CVD.
상세보기
Hong, Sukwon; Tran, Toan; Mallick, Abhijit; Liang, Jingmei; Ingle, Nitin K., Low shrinkage dielectric films.
상세보기
Mahajani, Maitreyee; Huang, Yi-Chiau; McDougall, Brendan, Low temperature ALD SiO.
상세보기
Fucsko, Janos; Smythe, III, John A; Li, Li; Waldo, Grady S, Low temperature process for polysilazane oxidation/densification.
상세보기
Liang, Jingmei; Ingle, Nitin K.; Hong, Sukwon; Patel, Anjana M., Low temperature silicon oxide conversion.
상세보기
Rose, Peter; Lopata, Eugene; Felts, John, Low κ dielectric inorganic/organic hybrid films and method of making.
상세보기
Yuan,Zheng; Arghavani,Reza; Yieh,Ellie Y; Venkataraman,Shankar, Low-thermal-budget gapfill process.
상세보기
Shin Daeshik (Kawasaki JPX), Manufacture of planarized insulating layer.
상세보기
Hasebe,Kazuhide; Endoh,Atsushi; Suzuki,Daisuke; Suzuki,Keisuke, Method and apparatus for forming silicon oxide film.
상세보기
Ikeda Yasuo (Tokyo JPX), Method and apparatus for forming silicon oxide film by chemical vapor deposition.
상세보기
Xia Li-Qun ; Sivaramakrishnan Visweswaren ; Nemani Srinivas ; Yieh Ellie ; Fong Gary, Method and apparatus for gettering fluorine from chamber material surfaces.
상세보기
Vincent E. Burkhart ; Steven Sansoni ; Michael N. Sugarman ; Anthony Chan, Method and apparatus for reducing thermal gradients within a substrate support.
상세보기
Kim, Chul-Sung; Choi, Si-Young; Park, Jung-Woo; Ryu, Jong-Ryol; Lee, Byeong-Chan, Method and device for forming an STI type isolation in a semiconductor device.
상세보기
Tu, Kuo-Chi; Chen, Chun-Yao; Chu, Huey-Chi; Chang, Chung-Wei; Lin, Tien-Lu; Huang, Kuo-Ching; Chen, Wen-Cheng; Huang, Tsung-Hsun; Tseng, Hsiao-Hui, Method and structure improving isolation between memory cell passing gate and capacitor.
상세보기
Mallick, Abhijit Basu; Munro, Jeffrey C.; Wang, Linlin; Nemani, Srinivas D.; Zheng, Yi; Yuan, Zheng; Lubomirsky, Dimitry; Yieh, Ellie Y., Method and system for improving dielectric film quality for void free gap fill.
상세보기
Mahanpour, Mehrdad; Massoodi, Mohammad; Hulog, Jose, Method and system for reducing polymer build up during plasma etch of an intermetal dielectric.
상세보기
Cho,Byoung Ha; Kim,Yong Il; Shin,Cheol Ho; Lee,Won Hyung; Kim,Jung Soo; Sim,Sang Tae, Method for atomic layer deposition (ALD) of silicon oxide film.
상세보기
Papasouliotis,George D.; Tarafdar,Raihan M.; Rulkens,Ron; Hausmann,Dennis M.; Tobin,Jeff; Tipton,Adrianne K.; Nie,Bunsen, Method for controlling properties of conformal silica nanolaminates formed by rapid vapor deposition.
상세보기
Harvey, Keith R.; Lim, Tian-Hoe; Xia, Li-Qun, Method for densification of CVD carbon-doped silicon oxide films through UV irradiation.
상세보기
Munro, Jeffrey C.; Nemani, Srinivas D., Method for depositing and curing low-k films for gapfill and conformal film applications.
상세보기
Kwok Kurt (Mountain View CA) Robertson Robert (Palo Alto CA), Method for depositing ozone/TEOS silicon oxide films of reduced surface sensitivity.
상세보기
Li Li ; Thakur Randhir ; Hawthorne Richard C., Method for forming a dielectric.
상세보기
Perera Asanga H., Method for forming a trench isolation structure in an integrated circuit.
상세보기
Perera, Asanga H., Method for forming a trench isolation structure in an integrated circuit.
상세보기
Cho, Ching-Wen; Chang, Kuwi-Jen; Chen, Sen-Fu; Lin, Kuang-Peng; Tay, Shing-Jzy; Yang, Szu-Hung; Chang, Chai-Der; Huang, Kuo-Su; Leu, Jen-Shiang; Fang, Weng-Liang; Wang, Jyh-Ping; Lee, Jow-Feng, Method for forming corrosion inhibited conductor layer.
상세보기
Park,Jae eun; Chu,Kang soo; Lee,Joo won; Yang,Jong ho, Method for forming silicon dioxide film using siloxane.
상세보기
Hah Hyung C. (Kwangmyung-City KRX) Kim Jung T. (Seoul KRX) Baek Yong K. (Seoul KRX) Cheon Hee K. (Seoul KRX), Method for maintaining the resistance of a high resistive polysilicon layer for a semiconductor device.
상세보기
Lin Shih-Chi,TWX, Method for making a novel graded silicon nitride/silicon oxide (SNO) hard mask for improved deep sub-micrometer semiconductor processing.
상세보기
Iyechika Yasushi (Ibaraki JPX) Takada Tomoyuki (Ibaraki JPX), Method for manufacturing group III-V compound semiconductor crystals.
상세보기
Stringfellow Gerald B. (Palo Alto CA) Hall ; Jr. Howard T. (Palo Alto CA), Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a.
상세보기
Papasouliotis, George D.; Tas, Robert D., Method of chemical modification of structure topography.
상세보기
Yin, Zhiping, Method of decontaminating process chambers, methods of reducing defects in anti-reflective coatings, and resulting semiconductor structures.
상세보기
Li,Li; Li,Weimin, Method of eliminating residual carbon from flowable oxide fill.
상세보기
Hashimoto, Shigeki, Method of fabricating group III-V nitride compound semiconductor and method of fabricating semiconductor device.
상세보기
Hsiao Chih-Hsiang,TWX, Method of fabricating shallow trench isolation using high density plasma CVD.
상세보기
Bender David L. (Muscatine IA) Brugman William H. (Muscatine IA) Myers Floyd S. (Muscatine IA), Method of fabrication of composite tire thread.
상세보기
Vassiliev Vladislav,SGX ; Peidous Igor,SGX, Method of filling shallow trenches.
상세보기
Cho, Young-Joo; Hong, Eun-Kee; Lee, Ju-Bum, Method of forming an interlayer dielectric film.
상세보기
Oh Yong-chul,KRX ; Park Young-Woo,KRX, Method of forming an isolation trench in a semiconductor device including annealing at an increased temperature.
상세보기
Agarwal Vishnu K. ; Derderian Garo J. ; Sandhu Gurtej S., Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell.
상세보기
Camilletti Robert C. (Midland MI) Dall Fredric C. (Merrill MI) Dunn Diana K. (Midland MI), Method of forming si-o containing coatings.
상세보기
Wang Larry Yu, Method of forming trench isolation with high integrity, ultra thin gate oxide.
상세보기
Klaus Jason ; Sneh Ofer ; George Steven M., Method of growing films on substrates at room temperatures using catalyzed binary reaction sequence chemistry.
상세보기
Wai-Fan Yau ; David Cheung ; Nasreen Gazala Chopra ; Yung-Cheng Lu ; Robert Mandal ; Farhad Moghadam, Method of improving moisture resistance of low dielectric constant films.
상세보기
Carl Dan (Mountainview CA) Dobuzinsky David M. (Hopewell Junction NY) Nguyen Son V. (Hopewell Junction NY) Nguyen Tue (Vancouver WA), Method of making TA₂O₅ thin film by low temperature ozone plasma annealing (oxidation).
상세보기

Lin Kang-Cheng,TWX ; Hong Hong-Jye,TWX, Method of making a polysilicon carbon source/drain heterojunction thin-film transistor.
상세보기

Sun Sey-Ping ; Gardner Mark I. ; Song Shengnian, Method of making an ultra thin silicon nitride film.
상세보기

Spikes ; Jr. Thomas E. ; Sun Sey-Ping ; Dawson Robert, Method of manufacturing an isolation region in a semiconductor device using a flowable oxide-generating material.
상세보기

Zenke Masanobu,JPX, Method of manufacturing semiconductor device.
상세보기

Ross, Matthew, Method of processing films prior to chemical vapor deposition using electron beam processing.
상세보기

Sandhu Gurtej S. (Boise ID), Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor com.
상세보기

Vassiliev, Vladislav Y.; Sudijono, John Leonard, Method of silicon oxide and silicon glass films deposition.
상세보기

Thakur Randhir P. S. ; Rolfson Brett, Method to form a DRAM capacitor using low temperature reoxidation.
상세보기

Karim, M. Ziaul; Moghadam, Farhad K.; Salimian, Siamak, Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation.
상세보기

Liang, Jingmei, Methods for forming a dielectric layer within trenches.
상세보기

Nemani, Srinivas D.; Mallick, Abhijit Basu; Yieh, Ellie Y., Methods for forming a silicon oxide layer over a substrate.
상세보기

Michael T. Carter ; William J. Donahue, Methods for low and ambient temperature preparation of precursors of compounds of group III metals and group V elements.
상세보기

Dussarrat,Christian; Girard,Jean Marc; Kimura,Takako; Tamaoki,Naoki; Sato,Yuusuke, Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition.
상세보기

Liang, Jingmei; Hong, Sukwon, Methods of curing non-carbon flowable CVD films.
상세보기

Maes, Jan Willem, Methods of depositing two or more layers on a substrate in situ.
상세보기

Hong, Sukwon; Hamana, Hiroshi; Liang, Jingmei, Methods of reducing substrate dislocation during gapfill processing.
상세보기

Wang Chen-Jong,TWX ; Yoo Chue-San,TWX ; Cheng Kuo-Hsien,TWX, Multi-layer silicon nitride deposition method for forming low oxidation temperature thermally oxidized silicon nitride/silicon oxide (no) layer.
상세보기

Chen, David; Shepherd, Jr., Robert A.; Gauri, Vishal; Papasouliotis, George D., Multi-step deposition and etch back gap fill process.
상세보기

Wakino Kikuo (Muko JPX) Mandai Harufumi (Takatsuki JPX), Multilayer printed circuit board.
상세보기

Umotoy Salvador P. ; Lei Lawrence C. ; Nguyen Anh N. ; Chiao Steve H., One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system.
상세보기

Geissler Stephen F. (Underhill VT) Korejwa Josef W. (Shelburne VT) Lasky Jerome B. (Essex Junction VT) Pan Pai-Hung (Hopewell Junction NY), Oxidation of silicon nitride in semiconductor devices.
상세보기

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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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