[미국특허]
Hardmask composition and method of forming patterns using the hardmask composition
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G03F-007/11
H01L-021/02
H01L-021/311
H01L-021/027
G03F-007/09
G03F-007/40
C09D-165/02
C08G-061/02
C09D-165/00
출원번호
US-0748911
(2015-06-24)
등록번호
US-9568825
(2017-02-14)
우선권정보
KR-10-2014-0089367 (2014-07-15)
발명자
/ 주소
Nam, Youn-Hee
Kim, Hea-Jung
Song, Hyun-Ji
출원인 / 주소
Samsung SDI Co., Ltd.
대리인 / 주소
Lee & Morse, P.C.
인용정보
피인용 횟수 :
0인용 특허 :
4
초록
A hardmask composition includes a polymer including a moiety represented by the following Chemical Formula 1 and a solvent. In the Chemical Formula 1, A, B, R1 and R2 are the same as defined in the detailed description.
대표청구항▼
1. A hardmask composition, comprising: a polymer represented by the following Chemical Formula 2: wherein, in Chemical Formula 2,A1, A2, B1 and B2 are independently a substituted or unsubstituted aromatic ring group,R1a, R2a, R1b, R2b, R1c, R2c, R1d and R2d are independently fluorine, a hydroxy grou
1. A hardmask composition, comprising: a polymer represented by the following Chemical Formula 2: wherein, in Chemical Formula 2,A1, A2, B1 and B2 are independently a substituted or unsubstituted aromatic ring group,R1a, R2a, R1b, R2b, R1c, R2c, R1d and R2d are independently fluorine, a hydroxy group, a substituted or unsubstituted aromatic ring group, or a combination thereof, andm and n are integers of 0≦m≦200 and 0≦n≦200, provided that the sum of the m and n is at least 1; anda solvent. 2. The hardmask composition as claimed in claim 1, wherein the A1, A2, B1 and B2 are independently a substituted or unsubstituted C6 to C50 arylene group. 3. The hardmask composition as claimed in claim 1, wherein the A1, A2, B1 and B2 are independently one of the groups listed in the Group 1 and Group 2: wherein in the Group 1,R3 and R4 are independently hydrogen, a hydroxy group, a methoxy group, an ethoxy group, a halogen, a substituted or unsubstituted C3 to C30 cycloalkenyl group, a substituted or unsubstituted C1 to C20 alkylamine group, a substituted or unsubstituted C7 to C20 arylalkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a substituted or unsubstituted C1 to C4 alkyl ether group, a substituted or unsubstituted C7 to C20 arylalkylene ether group, a substituted or unsubstituted C1 to C30 haloalkyl group, or a combination thereof, wherein in the Group 2,X1 and X2 are independently one of groups listed in the following Group 1, andR5 and R6 are independently hydrogen, a hydroxy group, a methoxy group, an ethoxy group, a halogen, a substituted or unsubstituted C3 to C30 cycloalkenyl group, a substituted or unsubstituted C1 to C20 alkylamine group, a substituted or unsubstituted C7 to C20 arylalkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a substituted or unsubstituted C1 to C4 alkyl ether group, a substituted or unsubstituted C7 to C20 arylalkylene ether group, a substituted or unsubstituted C1 to C30 haloalkyl group, or a combination thereof. 4. The hardmask composition as claimed in claim 1, wherein at least one of R1a, R2a, R1b, R2b, R1c, R2c, R1d and R2d is the substituted or unsubstituted aromatic ring group, the substituted or unsubstituted aromatic ring group being a substituted or unsubstituted naphthalene group, a substituted or unsubstituted phenyl group, a substituted or unsubstituted biphenyl group, a substituted or unsubstituted pyrene group, a substituted or unsubstituted binaphthalene group, a substituted or unsubstituted anthracene group, a substituted or unsubstituted fluorene group, or a combination thereof. 5. The hardmask composition as claimed in claim 1, wherein the polymer has a weight average molecular weight of about 1,000 to about 200,000. 6. The hardmask composition as claimed in claim 1, wherein the polymer is included in an amount of about 0.1 wt % to about 30 wt % based on the total weight of the organic layer composition. 7. A method of forming patterns, the method comprising: providing a material layer on a substrate;applying the hardmask composition as claimed in claim 1 on the material layer;heat-treating the hardmask composition to form a hardmask layer;forming a silicon-containing thin layer on the hardmask layer;forming a photoresist layer on the silicon-containing thin layer;exposing and developing the photoresist layer to form a photoresist pattern;selectively removing the silicon-containing thin layer and the hardmask layer using the photoresist pattern to expose a part of the material layer; andetching an exposed part of the material layer. 8. The method as claimed in claim 7, wherein the hardmask composition is applied using a spin-on coating method. 9. The method as claimed in claim 7, wherein the hardmask layer is formed by heat-treating at about 100° C. to about 500° C. 10. The method as claimed in claim 7, further comprising forming a bottom antireflective coating (BARC) before forming the photoresist layer. 11. The method as claimed in claim 7, wherein the silicon-containing thin layer includes silicon oxynitride (SiON).
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이 특허에 인용된 특허 (4)
Nonaka, Shiori; Tachibana, Seiichiro; Kori, Daisuke; Fujii, Toshihiko; Ogihara, Tsutomu, Method for forming a resist under layer film and patterning process.
Hatakeyama, Jun; Fujii, Toshihiko; Ogihara, Tsutomu, Method for forming resist underlayer film, patterning process using the same, and composition for the resist underlayer film.
Minegishi, Tomonori; Nogita, Rika; Iwashita, Kenichi, Photosensitive resin composition, process for producing patterned hardened film with use thereof and electronic part.
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