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A substrate processing apparatus for processing substrates comprises a processing chamber in which a substrate is processed. A process gas source is adapted to supply process gas into the processing chamber. A RF energy source is adapted to energize the process gas into a plasma state in the process

A substrate processing apparatus for processing substrates comprises a processing chamber in which a substrate is processed. A process gas source is adapted to supply process gas into the processing chamber. A RF energy source is adapted to energize the process gas into a plasma state in the processing chamber. A vacuum source is adapted to exhaust byproducts of the processing from the processing chamber. The processing chamber includes an electrostatic chuck assembly having a layer of ceramic material that includes an upper electrostatic clamping electrode and at least one RF electrode, a temperature controlled RF powered baseplate, and at least one annular electrically conductive gasket extending along an outer portion of an upper surface of the temperature controlled RF powered baseplate. The at least one annular electrically conductive gasket electrically couples the upper surface of the temperature controlled RF powered baseplate to the at least one RF electrode.

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1. A processing apparatus for processing a semiconductor substrate, the processing apparatus comprising: a processing chamber in which the semiconductor substrate is processed;a process gas source in fluid communication with the processing chamber and adapted to supply process gas into the processin

1. A processing apparatus for processing a semiconductor substrate, the processing apparatus comprising: a processing chamber in which the semiconductor substrate is processed;a process gas source in fluid communication with the processing chamber and adapted to supply process gas into the processing chamber;a RF energy source adapted to energize the process gas into a plasma state in the processing chamber;a vacuum source adapted to exhaust process gas and byproducts from the processing chamber during the processing of the semiconductor substrates; andan electrostatic chuck assembly comprising a layer of ceramic material including an electrostatic clamping (ESC) electrode and at least one RF electrode below the ESC electrode, wherein the at least one RF electrode and the ESC electrode are embedded in the layer of ceramic material,a temperature controlled RF powered baseplate,a bond layer disposed between the layer of ceramic material and the temperature controlled RF powered baseplate, wherein the bond layer bonds the temperature controlled RF powered baseplate to the layer of ceramic material, andat least one annular electrically conductive gasket extending along an upper surface of the temperature controlled RF powered baseplate and through the bond layer, wherein the at least one annular electrically conductive gasket electrically couples the upper surface of the temperature controlled RF powered baseplate to the RF electrode, wherein the layer of ceramic material includes a support surface adapted to electrostatically clamp a semiconductor substrate during processing of the semiconductor substrate, andwherein RF power is provided from the temperature controlled RF powered baseplate to the at least one RF electrode by the at least one annular electrically conductive gasket. 2. The processing apparatus of claim 1, wherein: the at least one annular electrically conductive gasket comprises an outer annular electrically conductive gasket and an inner annular electrically conductive gasket both of which extend in the bond layer; andthe inner annular electrically conductive gasket is disposed radially inward of the outer annular electrically conductive gasket. 3. The processing apparatus of claim 2, wherein the inner annular electrically conductive gasket and the outer annular electrically conductive gasket are disposed in the bond layer and between the temperature controlled RF powered baseplate and the layer of ceramic material. 4. The processing apparatus of claim 2, wherein the at least one annular electrically conductive gasket comprises one or more intermediate annular electrically conductive gaskets disposed between the outer annular electrically conductive gasket and the inner annular electrically conductive gasket. 5. The processing apparatus of claim 1, wherein the layer of ceramic material includes a stepped portion extending along a circumference of the layer of ceramic material. 6. The processing apparatus of claim 5, wherein the at least one RF electrode comprises: an inner RF electrode disposed below the ESC electrode and electrically coupled to the upper surface of the temperature controlled RF powered baseplate by a first annular electrically conductive gasket; andan outer annular RF electrode disposed underneath the stepped portion and electrically coupled to the upper surface of the temperature controlled RF powered baseplate by a second outer annular electrically conductive gasket. 7. The processing apparatus of claim 6, wherein: the inner RF electrode is electrically coupled to the upper surface of the temperature controlled RF powered baseplate by a first plurality of vertical electrically conductive vias; anda second plurality of vertical electrically conductive vias electrically couple the outer annular RF electrode to the inner RF electrode. 8. The processing apparatus of claim 1, wherein: the layer of ceramic material includes a plurality of vertical electrically conductive vias; andthe vertical electrically conductive vias electrically connect the at least one RF electrode to the at least one annular electrically conductive gasket or an annular electrical contact in the layer of ceramic material. 9. The processing apparatus of claim 1, wherein the at least one annular electrically conductive gasket is a spiral gasket. 10. The processing apparatus of claim 1, wherein: (a) the electrostatic chuck assembly further comprises at least one outlet in the support surface, which delivers a heat transfer gas to an underside of the semiconductor substrate, andat least one gas passage in the layer of ceramic material connected to a source of the heat transfer gas and operable to supply the heat transfer gas at a predetermined pressure to the at least one gas passage;(b) the bond layer is formed by an elastomeric material;(c) the electrostatic chuck assembly further comprises lift pins operable to lower the semiconductor substrate onto the support surface of the electrostatic chuck assembly and to raise the semiconductor substrate from the support surface of the electrostatic chuck assembly;(d) the ESC electrode is a monopolar or bipolar ESC electrode;(e) the layer of ceramic material includes a plurality independently controlled heaters operable to heat independently controllable zones;(f) the at least one annular electrically conductive gasket comprises a segmented gasket;(g) the ESC electrode includes a pattern of an electrically conductive material;(h) the at least one RF electrode includes a pattern of an electrically conductive material;(i) a lower surface of the layer of ceramic material includes at least one circumferentially extending channel;(j) an upper portion of each of the at least one annular electrically conductive gasket is disposed in a respective channel of the at least one circumferentially extending channel;(k) the lower surface of the layer of ceramic material includes an outer peripheral step;(l) the outer peripheral step extends around an outer periphery of the lower surface of the layer of ceramic material; and(m) an upper portion of an annular electrically conductive gasket of the at least one annular electrically conductive gasket is disposed in the outer peripheral step. 11. The processing apparatus of claim 1, further comprising: a control system configured to control processes performed by the processing apparatus; anda non-transitory computer machine-readable medium comprising program instructions for controlling the processing apparatus. 12. The processing apparatus of claim 1, wherein: the temperature controlled RF powered baseplate includes an upper layer of dielectric insulating material and an outer layer of dielectric insulating material;the dielectric insulating material is disposed on the upper surface of the temperature controlled RF powered baseplate and is adapted to reduce arcing between the semiconductor substrate and the temperature controlled RF powered baseplate; andthe outer layer of dielectric insulating material is disposed on an outer surface of the temperature controlled RF powered baseplate and is adapted to reduce arcing between the semiconductor substrate and the temperature controlled RF powered baseplate, wherein regions of the upper surface of the temperature controlled RF powered baseplate which contact the at least one annular electrically conductive gasket do not include the dielectric insulating material. 13. A method of processing the semiconductor substrate in the processing apparatus of claim 1, the method comprising: supporting the semiconductor substrate on the support surface of the electrostatic chuck assembly;supplying the process gas from the process gas source into the processing chamber;energizing the process gas into a plasma state in the processing chamber; andprocessing the semiconductor substrate in the processing chamber. 14. The method of claim 13, wherein the processing of the semiconductor substrate comprises plasma etching the semiconductor substrate or performing a deposition process on the semiconductor substrate. 15. The processing apparatus of claim 1, wherein the bond layer extends over and is in contact with an upper most surface of the temperature controlled RF powered baseplate and separates the temperature controlled RF powered baseplate from the layer of ceramic material. 16. The processing apparatus of claim 1, wherein the at least one annular electrically conductive gasket is disposed between and is in contact with the temperature controlled RF powered baseplate and the layer of ceramic material. 17. The processing apparatus of claim 1, wherein the bond layer is in contact with the temperature controlled RF powered baseplate and the layer of ceramic material. 18. The processing apparatus of claim 1, wherein the at least one annular electrically conductive gasket is formed by a band of electrically conductive material having an outer radius equal to an outer radius of the layer of ceramic material. 19. The processing apparatus of claim 1, further comprising an O-ring, wherein: the at least one annular electrically conductive gasket is formed by a band of electrically conductive material having an outer radius that is 10 mm or less than an outer radius of the layer of ceramic material; andthe O-ring surrounds the band of electrically conductive material. 20. The processing apparatus of claim 1, wherein: the at least one annular electrically conductive gasket is formed from an electrically conductive epoxy adhesive or an electrically conductive silicone adhesive; andthe at least one annular electrically conductive gasket bonds the temperature controlled RF powered baseplate to the layer of ceramic material. 21. The processing apparatus of claim 1, wherein the annular electrically conductive gasket is disposed in a channel of the bond layer. 22. The processing apparatus of claim 1, wherein the at least one electrically conductive gasket extends along an outer periphery of the bond layer. 23. The processing apparatus of claim 1, wherein the annular electrically conductive gasket contacts the RF electrode. 24. The processing apparatus of claim 1, wherein the bond layer is formed of a non-conductive elastomeric material. 25. The processing apparatus of claim 1, wherein the bond layer provides thermal separation between the layer of ceramic material and the temperature controlled RF powered baseplate, such that a temperature difference between the layer of ceramic material and the temperature controlled RF powered baseplate is up to 150° C. 26. An electrostatic chuck assembly for a semiconductor substrate processing chamber of a semiconductor substrate processing apparatus, the electrostatic chuck assembly comprising: a first layer of ceramic material including an electrostatic clamping (ESC) electrode and at least one RF electrode disposed below the ESC electrode, wherein the at least one RF electrode and the ESC electrode are embedded in the layer of ceramic material;a temperature controlled RF powered baseplate;a bond layer disposed between the first layer of ceramic material and the temperature controlled RF powered baseplate, wherein the bond layer bonds the temperature controlled RF powered baseplate to the first layer of ceramic material; andat least one annular electrically conductive gasket extending along an upper surface of the temperature controlled RF powered baseplate and through the bond layer, wherein the at least one annular electrically conductive gasket electrically couples the upper surface of the temperature controlled RF powered baseplate to the at least one RF electrode, wherein RF power is provided from the temperature controlled RF powered baseplate to the at least one RF electrode by the at least one annular electrically conductive gasket, andwherein the first layer of ceramic material includes a support surface adapted to electrostatically clamp a semiconductor substrate during processing of the semiconductor substrate. 27. The electrostatic chuck assembly of claim 26, wherein: the at least one annular electrically conductive gasket comprises an outer annular electrically conductive gasket and an inner annular electrically conductive gasket both of which extend in the bond layer; andthe inner annular electrically conductive gasket is disposed radially inward of the outer annular electrically conductive gasket. 28. The electrostatic chuck assembly of claim 26, wherein the first layer of ceramic material includes a stepped portion extending along a circumference of the first layer of ceramic material. 29. The electrostatic chuck assembly of claim 26, wherein: the first layer of ceramic material includes a plurality of vertical electrically conductive vias; andthe vertical electrically conductive vias electrically connect the at least one RF electrode to the at least one annular electrically conductive gasket or an annular electrical contact in the first layer of ceramic material. 30. The electrostatic chuck assembly of claim 26, further comprising an O-ring, wherein the at least one annular electrically conductive gasket is formed: by a band of electrically conductive material having an outer radius that is 10 mm or less than an outer radius of the first layer of ceramic material;wherein the O-ring surrounds the band of electrically conductive material; andfrom an electrically conductive epoxy adhesive or an electrically conductive silicone adhesive,wherein the at least one annular electrically conductive gasket bonds the temperature controlled RF powered baseplate to the first layer of ceramic material. 31. The electrostatic chuck assembly of claim 26, wherein: (a) the electrostatic chuck assembly further comprises at least one outlet in the support surface which delivers a heat transfer gas to an underside of the semiconductor substrate, andat least one gas passage in the first layer of ceramic material connected to a source of the heat transfer gas and operable to supply the heat transfer gas at a predetermined pressure to the at least one gas passage;(b) the bond layer is formed by an elastomeric material;(c) the electrostatic chuck assembly further comprises lift pins operable to lower the semiconductor substrate onto the support surface of the electrostatic chuck assembly and to raise the semiconductor substrate from the support surface of the electrostatic chuck assembly;(d) the ESC electrode is a monopolar or bipolar ESC electrode;(e) the first layer of ceramic material includes a plurality of independently controlled heaters operable to heat independently controllable zones;(f) the at least one annular electrically conductive gasket comprises a segmented gasket;(g) the ESC electrode includes a pattern of an electrically conductive material;(h) the at least one RF electrode includes a pattern of an electrically conductive material; and/or(i) a lower surface of the first layer of ceramic material includes at least one circumferentially extending channel;(j) an upper portion of each of the at least one annular electrically conductive gaskets is disposed in a respective channel of the at least one circumferentially extending channel;(k) the lower surface of the first layer of ceramic material includes an outer peripheral step;(l) the outer peripheral step extends around an outer periphery of the lower surface of the first layer of ceramic material; and(m) an upper portion of an annular electrically conductive gasket of the at least one annular electrically conductive gasket is disposed in the outer peripheral step. 32. The electrostatic chuck assembly of claim 26, wherein: the temperature controlled RF powered baseplate includes an upper layer of dielectric insulating material and an outer layer of dielectric insulating material;the dielectric insulating material is disposed on the upper surface of the temperature controlled RF powered baseplate and is adapted to reduce arcing between the semiconductor substrate and the temperature controlled RF powered baseplate, wherein regions of the upper surface of the temperature controlled RF powered baseplate which contact the at least one annular electrically conductive gasket do not include the dielectric insulating material; andthe outer layer of dielectric insulating material is disposed on an outer surface of the temperature controlled RF powered baseplate and is adapted to reduce arcing between the semiconductor substrate and the temperature controlled RF powered baseplate. 33. A method of manufacturing the electrostatic chuck assembly of claim 26, the method comprising: forming the first layer of ceramic material including the ESC electrode and the at least one RF electrode by arranging the ESC electrode and the at least one RF electrode between layers of green ceramic material, andfiring the layers of the green ceramic material to form the first layer of ceramic material; andbonding the first layer of ceramic material via the bond layer to the upper surface of a temperature controlled RF powered baseplate such that the at least one annular electrically conductive gasket electrically extends through the bond layer and electrically couples the upper surface of the temperature controlled RF powered baseplate to the at least one RF electrode. 34. The method of claim 33, further comprising: punching holes in the layers of the green ceramic material before firing;filling the punched holes with a metal paste to form a plurality of vertical electrically conductive vias, wherein the plurality of vertical electrically conductive vias are adapted to electrically connect the at least one RF electrode to the at least one annular electrically conductive gasket; andforming an annular electrical contact at ends of the plurality of vertical electrically conductive vias,wherein the plurality of vertical electrically conductive vias and the annular electrical contact are adapted to electrically connect the at least one RF electrode to the at least one annular electrically conductive gasket. 35. The method of claim 33, further comprising coating an upper surface and an outer surface of the temperature controlled RF powered baseplate with a dielectric insulating material, wherein regions of the upper surface of the temperature controlled RF powered baseplate are adapted to electrically connect to the annular electrically conductive gasket and are not coated.