Method of controlling a temperature of a chemical mechanical polishing process, temperature control, and CMP apparatus including the temperature control
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B24B-037/00
B24B-037/015
B24B-055/02
B24B-049/14
B24B-037/26
출원번호
15926244
(2018-03-20)
등록번호
10821572
(2020-11-03)
우선권정보
KR-10-2017-0124243 (2017-09-26)
발명자
/ 주소
Jeong, Suk-Hoon
Lee, Sang-Hak
Choi, Geun-Kyu
Hwang, Chang-Sun
Kwon, Tae-Young
Kim, Young-Sang
Jin, Hyung-Kyu
Han, Jeong-Nam
출원인 / 주소
SAMSUNG ELECTRONICS CO., LTD.
대리인 / 주소
Lee IP Law, P.C.
인용정보
피인용 횟수 :
0인용 특허 :
0
초록▼
A method of controlling a chemical mechanical polishing (CMP) process, a temperature control, and a CMP apparatus, the method including measuring actual temperatures of at least two regions in a platen in real time during the CMP process in which a polishing pad attached to the platen polishes a sub
A method of controlling a chemical mechanical polishing (CMP) process, a temperature control, and a CMP apparatus, the method including measuring actual temperatures of at least two regions in a platen in real time during the CMP process in which a polishing pad attached to the platen polishes a substrate held by a polishing head using slurry and deionized water; receiving the measured actual temperatures of the regions; and individually controlling the actual temperatures of the regions in real time during the CMP process to provide the regions with a predetermined set CMP process temperature.
대표청구항▼
1. A method of controlling a chemical mechanical polishing (CMP) process, the method comprising: measuring actual temperatures of at least two regions in a platen in real time during the CMP process in which a polishing pad attached to the platen polishes a substrate held by a polishing head using s
1. A method of controlling a chemical mechanical polishing (CMP) process, the method comprising: measuring actual temperatures of at least two regions in a platen in real time during the CMP process in which a polishing pad attached to the platen polishes a substrate held by a polishing head using slurry and deionized water;receiving the measured actual temperatures of the regions;individually controlling the actual temperatures of the regions in real time during the CMP process to provide the regions with a predetermined set CMP process temperature;measuring an initial temperature of the platen before the CMP process;receiving the measured initial temperature of the platen; andproviding the platen with the CMP process temperature. 2. The method as claimed in claim 1, further comprising: measuring a surface temperature of the polishing pad in real time during the CMP process; andreceiving the surface temperature of the polishing pad. 3. The method as claimed in claim 1, further comprising: measuring temperatures of the slurry and the deionized water in real time during the CMP process; andcontrolling the temperatures of the slurry and the deionized water in real time during the CMP process to provide the slurry and the deionized water with the CMP process temperature. 4. The method as claimed in claim 1, further comprising: measuring actual temperatures of at least two regions of the platen in real time during a conditioning process on the polishing pad performed after the CMP process;receiving the measured actual temperatures of the regions; andindividually controlling the actual temperatures of the regions during the conditioning process to provide the regions with a predetermined set conditioning process temperature. 5. The method as claimed in claim 4, further comprising: measuring a surface temperature of the polishing pad in real time during the conditioning process; andreceiving the surface temperature of the polishing pad. 6. The method as claimed in claim 4, further comprising: measuring the temperature of the deionized water in real time during the conditioning process; andcontrolling the temperature of the deionized water in real time during the conditioning process to provide the deionized water with the conditioning process temperature. 7. The method as claimed in claim 4, further comprising: measuring the temperature of the platen before the conditioning process;receiving the measured temperature of the platen; andproviding the platen with the conditioning process temperature. 8. A temperature control for a CMP process, the temperature control comprising: a plurality of first temperature sensors configured to: measure actual temperatures of at least two regions in a platen in real time during the CMP process in which a polishing pad attached to the platen polishes a substrate held by a polishing head using slurry and deionized water, andmeasure an initial temperature of the platen before the CMP process; anda first temperature controller configured to: receive the measured actual temperatures of the regions,individually control the actual temperatures of the regions in real time during the CMP process to provide the regions with a predetermined set CMP process temperature, andreceive the measured initial temperature of the platen and to provide the platen with the CMP process temperature. 9. The temperature control as claimed in claim 8, further comprising a second temperature sensor configured to measure a surface temperature of the polishing pad in real time during the CMP process, wherein the first temperature controller is configured to receive the surface temperature of the polishing pad measured by the second temperature sensor. 10. The temperature control as claimed in claim 8, further comprising: a third temperature sensor configured to measure the temperature of the deionized water in real time during the CMP process;a second temperature controller configured to control the temperature of the deionized water measured by the third temperature sensor in real time during the CMP process to provide the deionized water with the CMP process temperature;a fourth temperature sensor configured to measure the temperature of the slurry in real time during the CMP process; anda third temperature controller configured to control the temperature of the slurry measured by the fourth temperature sensor in real time during the CMP process to provide the slurry with the CMP process temperature. 11. The temperature control as claimed in claim 10, wherein the second and third temperature controllers include a Peltier element. 12. The temperature control as claimed in claim 8, wherein: the plurality of first temperature sensors are also configured to measure actual temperatures of at least two regions of the platen in real time during a conditioning process on the polishing pad performed after the CMP process, andthe first temperature controller is also configured to receive the measured actual temperatures of the regions and to individually control the actual temperatures of the regions during the conditioning process to provide the regions with a predetermined set conditioning process temperature. 13. The temperature control as claimed in claim 12, further comprising a second temperature sensor configured to measure a surface temperature of the polishing pad in real time during the conditioning process, wherein the first temperature controller is configured to receive the surface temperature of the polishing pad measured by the second temperature sensor. 14. The temperature control as claimed in claim 12, wherein: the plurality of first temperature sensors are also configured to measure the temperature of the platen before the conditioning process, andthe first temperature controller is also configured to receive the measured temperature of the platen and to provide the platen with the conditioning process temperature. 15. The temperature control as claimed in claim 8, wherein the first temperature controller includes a Peltier element. 16. A CMP apparatus, comprising: a polishing head configured to hold a substrate;a platen arranged under the polishing head;a polishing pad for polishing the substrate attached to the platen;a nozzle configured to supply slurry and deionized water to a space between the substrate and the polishing pad;a plurality of first temperature sensors configured to: measure actual temperatures of at least two regions in the platen in real time during a CMP process, andmeasure an initial temperature of the platen before the CMP process; anda first temperature controller configured to: receive the measured actual temperatures of the regions,individually control the actual temperatures of the regions in real time during the CMP process to provide the regions with a predetermined set CMP process temperature, andreceive the measured initial temperature of the platen and provide the platen with the CMP process temperature. 17. The CMP apparatus as claimed in claim 16, further comprising: a second temperature sensor attached to the polishing head, the second temperature sensor being configured to measure a surface temperature of the polishing pad in real time during the CMP process;a third temperature sensor configured to measure the temperature of the deionized water in real time during the CMP process;a second temperature controller configured to control the temperature of the deionized water measured by the third temperature sensor in real time during the CMP process to provide the deionized water with the CMP process temperature;a fourth temperature sensor configured to measure the temperature of the slurry in real time during the CMP process; anda third temperature controller configured to control the temperature of the slurry measured by the fourth temperature sensor in real time during the CMP process to provide the slurry with the CMP process temperature. 18. The CMP apparatus as claimed in claim 16, further comprising a conditioner configured to perform a conditioning process on the polishing pad.
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