초록 ▼

- 본 연구에서는 우선 기판을 $SiO_2$/Si 또는 플라스틱, 증착온도를 ${25^{\circ}C}$ (Room temperature), 그리고 산소분압($O_2$ fraction)을 0.2 - 0.7을 사용하여 RF 마그네트론 스퍼터링 방법으로 "ZnO 박막 증착 연구" 를 성공적으로 수행하였다.
- 또한 증착된 ZnO 박막들을 전자빔 에너지= 1MeV, 전자빔 dose (전자수/$cm^2$) = $1\times10^{14}\;-\;4

- 본 연구에서는 우선 기판을 $SiO_2$/Si 또는 플라스틱, 증착온도를 ${25^{\circ}C}$ (Room temperature), 그리고 산소분압($O_2$ fraction)을 0.2 - 0.7을 사용하여 RF 마그네트론 스퍼터링 방법으로 "ZnO 박막 증착 연구" 를 성공적으로 수행하였다.
- 또한 증착된 ZnO 박막들을 전자빔 에너지= 1MeV, 전자빔 dose (전자수/$cm^2$) = $1\times10^{14}\;-\;4.7\times10^{16}$의 조건으로 전자빔 조사 처리를 하여 "고에너지 전자빔 조사의 ZnO박막 특성에 미치는 영향 연구"를 성공적으로 수행하였다.

Abstract ▼

1. We reported the realization of the p-type conductivity and the enhancement of the photoluminescence (PL) intensity in undoped ZnO films deposited with $O_2$ fraction of 0.2 and treated wi th high-energy (1 MeV) electron-beam irradiation (HEEBI), suggesting that the HEEBI process is com

1. We reported the realization of the p-type conductivity and the enhancement of the photoluminescence (PL) intensity in undoped ZnO films deposited with $O_2$ fraction of 0.2 and treated wi th high-energy (1 MeV) electron-beam irradiation (HEEBI), suggesting that the HEEBI process is compatible wi th a low-temperature requirement for the fabrication of transparent thin film transistors with good efficiency on a plastic substrate. The p-type conductivity of the films was revealed by the Hall, x-ray photoelectron spectroscopy. and PL measurements after being electronirradiated in air at room temperature. The major acceptor-like defects were determined to be oxygen interstitial and zinc vacancy. A model was proposed in terms of 0 as well as Zn diffusion to explain the observed results.
2. In this work we also demonstrated that HEEBI performed in air at room temperature affects remarkably the electrical, optical, and structural properties of undoped ZnO films prepared not only by $O_2$ fraction of 0.7 but also on $SiO_2$ substrates by magnetron sputtering techniques. Hall and photoluminescence measurements revealed that the p-type conductivity was realized in HEEBI treated films wi th low dose of $10^{14}$ electrons/$cm^2$ and converted to n-type conductivity with further increase in the amount of dose. X-ray photoelectron spectroscopy showed that in-diffusion of Si from the substrate as well as N from the ambient into the films took place as a result of HEEBI treatmentat high and low doses, respectively. X-ray diffraction analysis indicated that all as-grown films were found to have compressive stress, which was relieved to some extent by HEEBI treatment wi th high dose of $10^{16}$ electrons/$cm^2$. It was also found that better crystallinity with a bigger grain size was observed in HEEBI treated ZnO films with a higher dose. Field emission scanning electron microscope showed that HEEBI treated films with low dose had surface morphologies with big rod-like shapes. The major acceptor-like defects weredetermined to be oxygen interstitial and zinc vacancy. A model was proposed in terms of 0, Zn, N, and Sidiffusion to explain the observed results.
3. Finally, we investigated the effects of HEEBI on the optical transmittance of undoped ZnO films grown on transparent substrates, such as corning glass and polyethersulfone (PES) plastic substrates, with a radio frequency (rf) magnetron sputtering technique. The ZnO thin films were treated with HEEBI in air at RT with an electron beam energy of 1 MeV and doses of $4.7\times10^{14}-4.7\times10^{16}$ electrons/$cm^2$. The optical transmittance of ZnO films was measured using an ultraviolet visible near-infrared spectrophotometer. The detailed estimation process for separating the transmittance of HEEBI-treated ZnO films from the total transmittance of ZnO films on transparent substrates treated with HEEBI was given in this paper. It was concluded that HEEBI causes a Ii ttle suppression on the optical transmittance of ZnO thin films. It was also concluded that HEEBI treatment with a high dose sifted the optical band gap $(E_g)$toward the lower energy region from 3.29 to 3.28 eV whereas that with a low dose unchanged $E_g$ at 3.25 eV. This shift suggested that HEEBI at RT with a high doseacts like annealing treatment at high temperature.

목차 Contents

• 표지...1
• 제출문...2
• 보고서 초록...3
• 요약문...4
• SUMMARY...6
• 목차...8
• 제 1 장 과제개요...10
• 제 2 장 연구개발의 필요성...11
• 1절 기술적 측면...11
• 2절 경제.산업적 측면...12
• 3절 사회.문화적 측면...13
• 제 3 장 국내외 기술개발 현황...14
• 1절 지금까지의 국내외 연구개발 실적...14
• 2절 현기술상태의 취약성...16
• 3절 앞으로의 전망...16
• 4절 국내에서 연구개발 하는 대신 기술도입 가능성...17
• 5절 산업체 참여시기 및 방법...17
• 6절 연구개발한 기술(또는 연구개발결과)의 세계적 수준이 다음의 기술발전주기 (technology life cycle)중 현재 어느 단계에 해당되는가?...17
• 제 4 장 연구개발 목표 및 달성도...18
• 1절 최종 목표...18
• 2절 당해 단계목표 및 달성도...18
• 3절 세부연구목표별 주요연구내용 및 결과...19
• 1. ZnO 박막 증착 연구 수행:...19
• 2. 고에너지 전자빔 조사의 ZnO박막 특성에 미치는 영향 연구...19
• 가. Ptype conduction in roomtemperature highenergy electronirradiated ZnO thin films...19
• 나. Effect of highenergy electron beam irradiation on the properties of ZnO thin films prepared by magnetron sputtering...24
• 다. Effect of Highenergy Electron Beam Irradiation on the Transmittance of ZnO Thin Films on Transparent Substrates...30
• 3. 양질의 ZnO 박막 증착의 최적 조건 수립 및 모델제시...38
• 가. 양질의 ZnO 박막 증착의 최적 조건 수립...38
• 나. SiO2 기판위에 산소분압＝ 0.2로 증착된 ZnO 박막의 경우, Energy ＝ 1MeV, dose＝1×1016 전자수/cm2의 조건으로 HEEBI 처리 진행중 발생하는 현상에 대한 모델제시...38
• 다. SiO2 기판위에 산소분압＝ 0.7로 증착된 ZnO 박막의 경우, Energy ＝ 1MeV, dose＝1×1014 1×1016 전자수/cm2의 조건으로 HEEBI 처리 진행 중 발생하는 현상에 대한 모델제시...39
• 4절 참여연구원별 연구 활동 및 주요연구실적...41
• 5절 자체평가의견서...42
• 제 5 장 연구개발결과 활용방안...43
• 1절 기술적 측면...43
• 2절 경제.산업적 측면...43
• 3절 활용방안...44
• 제 6 장 참고문헌...45
• 연구개발 요약서...49
• 연구결과활용계획서...51
• 연구결과활용계획서...52
• 기술 요약서...56