초록

본 연구진이 2010년 개발한 Top-down 방식의 2차 스퍼터링 현상을 이용한 10nm대의 3차원 나노 패터닝 방법을 이용 및 응용하여 초고해상도와 높은 종횡비를 갖춘 정밀한 패턴을 대면적의 유연기판 위에 전사하는 새로운 유연 소자를 위한 나노 공정 기술을 개발하는 것이다.

(출처 : 요약서 3p)

Abstract ▼

Purpose & Contents
The purpose is development of 10nm scale 3-dimensional nano-patterning method on the soft substrate which is precise, high aspect ratio and high resolution from new patterning method called secondary sputtering lithography developed by our research group in 2010

Accordin

Purpose & Contents
The purpose is development of 10nm scale 3-dimensional nano-patterning method on the soft substrate which is precise, high aspect ratio and high resolution from new patterning method called secondary sputtering lithography developed by our research group in 2010

According to the change of paradigm of electronic device from high performance and high density to human convenient, wearable and emotional technology, development of high resolution of nano-patterning technology is required for soft electronics. However, although current lithography methods such as photo lithography and electron beam lithography are enable to fabricate 10nm scale high resolution of nano-pattern on the hard substrate, it is difficult to fabricate precise nano-pattern on the soft substrate due to the deformation of soft substrate because of high temperature process like CVD and chemical solvent process like development of photo resist. Therefore, development of new patterning method for soft electronics is required without high temperature and chemical solvent process.

To date, alternative nano-patterning methods are developed for soft electronics.
Among them, transfer printing method from John A. Rogers group and nano imprinting method are proper for soft electronic. However, resolution of each method is much lower than conventional lithography methods.

Therefore, our research group will try development of 10nm scale 3-dimensional nanopatterning method on the soft substrate which is precise, high aspect ratio and high resolution from new patterning method called secondary sputtering lithography developed by our research group in 2010 over a large area. And we will apply to the various soft substrate such as PDMS, PUA and PET and various target materials such as metal, semiconductor and insulator. And also we will try stability test such as bending and stretching to check on the mechanical stability on the soft substrate.

Results
Our research group published 28 of SCI research paper, 7 of KR patents, and 2 of PCT in USA during last two years.

Expected Contribution
New nano-patterning method we develop on the soft substrate is expected to the key nano-pattening process for the future soft electronic device due to its properties such as high resolution, large area, low temperature process and no solvent process. As this technology has 10nm resolution and about 20 aspect ratio, nano-pattern from it has advantages that are high transparent and high conductive properties comparable to the ITO. Specially, transparent display is selected as the future technology for leading our industry (2011, Ministry of knowledge economy). Our nano-patterning method must be the key technology for transparent display device in the future.

(출처 : SUMMARY 5p)

목차 Contents

• 표지 ... 1
• 제 출 문 ... 2
• 보고서 요약서 ... 3
• 국문 요약문 ... 4
• SUMMARY ... 5
• 목차 ... 6
• 제1장. 연구개발과제의 개요 ... 7
• 1. 연구개발 목적 ... 7
• 2. 연구개발의 필요성 ... 8
• 3. 연구개발의 범위 ... 9
• 제2장. 국내외 기술 개발 현황 ... 11
• 1. 세계적 수준 ... 11
• 2. 국내수준 ... 11
• 3. 국내외 연구현황 ... 11
• 4. 선행연구의 내용 및 결과 ... 12
• 5. 현기술상태의 취약성 ... 13
• 6. 앞으로의 전망 ... 13
• 제3장. 연구 수행 내용 및 성과 ... 14
• 1. 연구수행 내용 및 결과 ... 14
• 2. 연구수행 성과 ... 20
• 제4장. 목표 달성도 및 관련 분야 기여도 ... 30
• 1. 목표 달성도 ... 30
• 2. 관련 분야 기여도 ... 31
• 제5장. 연구개발성과의 활용계획 ... 32
• 1. 연구개발 결과의 활용방안 ... 32
• 2. 기대성과 ... 32
• 제6장. 연구 과정에서 수집한 해외 과학기술 정보 ... 32
• 제7장. 연구개발성과의 보안등급 ... 32
• 제8장. 국가과학기술종합정보시스템에 등록한 연구시설·장비 현황 ... 32
• 제9장. 연구개발과제 수행에 따른 연구실 등의 안전 조치 이행 실적 ... 32
• 제10장. 연구개발과제의 대표적 연구 실적 ... 33
• 제11장. 기타 사항 ... 33
• 제12장. 참고 문헌 ... 33
• 끝페이지 ... 34