Recently, metal oxide-based resistive switching devices, commonly known as resistive random access memory (ReRAM), are of considerable interest because of their potential use in next-generation memories, neuromorphic computing devices, and high-density storage applications. In dielectric, oxide, or ...
Recently, metal oxide-based resistive switching devices, commonly known as resistive random access memory (ReRAM), are of considerable interest because of their potential use in next-generation memories, neuromorphic computing devices, and high-density storage applications. In dielectric, oxide, or nitride-based devices, resistive switching is considered by the result of the formation and rupture of conductive filaments across the insulating oxide or nitride layer between the metal electrodes. Many research groups have scientifically proven the cause and mechanism of filament formation, and as a result, it has been shown that it varies depending on metal used as the electrode and the material used as the switching layer constituting the device. Using this filament formation method, we can easily insert metal ions into other oxide, nitride-based materials, and these inserted metal ions affect physical properties such as electrical and optical properties.
This thesis aims to improve the properties by grafting this approach, which seeks to understand and utilize the filament formation mechanism to not only improve ReRAM devices, but also solve several problems that other electrical devices (thermoelectric device) have. First, in Chapter 2, the filament formation method and its mechanism were described. In Chapter 3, the problem of degradation of a-IZGO based ReRAM characteristics due to the vacancy in a-IZGO material was improved through hydrogen doping, and as a result, a device with stable switching operation characteristics and increased ON/OFF ratio was developed. In addition, in order to solve the problem of sneak path current required for 3D stacking of ReRAM devices, a buffer layer of Vanadium oxy-nitride (VOxNy) was inserted into the Vanadium oxide (VO2)-based selector to improve the selector characteristics. In Chapter 4, using the principle of injecting metal into the insulating material during filament formation, Aluminum oxide (Al2O3), an insulator material, can be tuned its electrical conductivity, and also showed the possibility of application to thermoelectric devices by engineering its own thermal conductivity. In addition, the change of the Seebeck coefficient of the Al2O3 thin film was examined by injecting various metals (Cu, Ni, Pt) using the filament method. As a result, it was possible to obtain n- or p-type bi-usable characteristics depending on the injected metal.
Recently, metal oxide-based resistive switching devices, commonly known as resistive random access memory (ReRAM), are of considerable interest because of their potential use in next-generation memories, neuromorphic computing devices, and high-density storage applications. In dielectric, oxide, or nitride-based devices, resistive switching is considered by the result of the formation and rupture of conductive filaments across the insulating oxide or nitride layer between the metal electrodes. Many research groups have scientifically proven the cause and mechanism of filament formation, and as a result, it has been shown that it varies depending on metal used as the electrode and the material used as the switching layer constituting the device. Using this filament formation method, we can easily insert metal ions into other oxide, nitride-based materials, and these inserted metal ions affect physical properties such as electrical and optical properties.
This thesis aims to improve the properties by grafting this approach, which seeks to understand and utilize the filament formation mechanism to not only improve ReRAM devices, but also solve several problems that other electrical devices (thermoelectric device) have. First, in Chapter 2, the filament formation method and its mechanism were described. In Chapter 3, the problem of degradation of a-IZGO based ReRAM characteristics due to the vacancy in a-IZGO material was improved through hydrogen doping, and as a result, a device with stable switching operation characteristics and increased ON/OFF ratio was developed. In addition, in order to solve the problem of sneak path current required for 3D stacking of ReRAM devices, a buffer layer of Vanadium oxy-nitride (VOxNy) was inserted into the Vanadium oxide (VO2)-based selector to improve the selector characteristics. In Chapter 4, using the principle of injecting metal into the insulating material during filament formation, Aluminum oxide (Al2O3), an insulator material, can be tuned its electrical conductivity, and also showed the possibility of application to thermoelectric devices by engineering its own thermal conductivity. In addition, the change of the Seebeck coefficient of the Al2O3 thin film was examined by injecting various metals (Cu, Ni, Pt) using the filament method. As a result, it was possible to obtain n- or p-type bi-usable characteristics depending on the injected metal.
Keyword
#Resistive swiching device Thermoelectric device Conductive filament ReRAM
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