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[해외논문] Gradual switching and self-rectifying characteristics of Cu/α-IGZO/p +-Si RRAM for synaptic device application

Solid-state electronics, v.150, 2018년, pp.60 - 65  

Bang, Suhyun (Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea) ,  Kim, Min-Hwi (Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea) ,  Kim, Tae-Hyeon (Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea) ,  Lee, Dong Keun (Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea) ,  Kim, Sungjun (School of Electronics Engineering, Chungbuk National University, Cheongju 28644, Republic of Korea) ,  Cho, Seongjae (Department of Electronics Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Republic of Korea) ,  Park, Byung-Gook (Inter-university Semiconductor Research Center (ISRC) and the Dep)

Abstract ▼ AI-Helper 아이콘AI-Helper

Abstract In this work, we investigated the gradual switching and self-rectifying characteristics of Cu/α-IGZO/p +-Si resistive-switching random-access memory (RRAM) device. We fabricated the RRAM cells with Cu as the top electrode (TE) and heavily doped p-type silicon as the bottom electrode ...

Keyword

#Gradual switching   #Self-rectification   #Resistive-switching random-access memory   #Amorphous indium gallium zinc oxide   #Synaptic device  

참고문헌 (28)

  1. Mater Today Sawa 11 28 2008 10.1016/S1369-7021(08)70119-6 Resistive switching in transition metal oxides 

    상세보기 crossref

  2. Baek I, Kim D, Lee M, Kim H-J, Yim E, Lee M, et al. Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application. Electron devices meeting, 2005 IEDM technical digest IEEE international. IEEE; 2005. p. 750-3. 

  3. Jpn J Appl Phys Lee 46 2175 2007 10.1143/JJAP.46.2175 Low-power switching of nonvolatile resistive memory using hafnium oxide 

    상세보기 crossref

  4. PCCP Kim 19 18988 2017 10.1039/C7CP03120C Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device 

    상세보기 crossref

  5. Nanotechnology. Kim 28 125207 2017 10.1088/1361-6528/aa5e72 Nano-cone resistive memory for ultralow power operation 

    상세보기 crossref

  6. Solid-State Electron Kim 132 109 2017 10.1016/j.sse.2017.03.015 Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiNx-based resistive memory 

    상세보기 crossref

  7. Solid-State Electron Kim 114 94 2015 10.1016/j.sse.2015.08.003 Gradual bipolar resistive switching in Ni/Si3 N4/n+-Si resistive-switching memory device for high-density integration and low-power applications 

    상세보기 crossref

  8. 10.1109/IEDM.2012.6479016 Park S, Kim H, Choo M, Noh J, Sheri A, Jung S, et al. RRAM-based synapse for neuromorphic system with pattern recognition function. Electron devices meeting (IEDM), 2012 IEEE international. IEEE; 2012. p. 10.2.1-.2.4. 

    crossref

  9. 10.1109/IEDM.2015.7409722 Chen Z, Gao B, Zhou Z, Huang P, Li H, Ma W, et al. Optimized learning scheme for grayscale image recognition in a RRAM based analog neuromorphic system. Electron devices meeting (IEDM), 2015 IEEE international. IEEE; 2015. p. 17.7.1-.7.4. 

    crossref

  10. IEEE Trans Electron Dev Garbin 62 2494 2015 10.1109/TED.2015.2440102 HfO 2-based OxRAM devices as synapses for convolutional neural networks 

    상세보기 crossref

  11. ACS Appl Mater Interf Kim 9 40420 2017 10.1021/acsami.7b11191 Analog synaptic behavior of a silicon nitride memristor 

    상세보기 crossref

  12. Appl Phys Lett Liao 94 2009 10.1063/1.3159471 Categorization of resistive switching of metal-Pr 0.7Ca0.3MnO3-metal devices 

    상세보기 crossref

  13. Nanotechnology Yoon 24 145201 2013 10.1088/0957-4484/24/14/145201 Ionic bipolar resistive switching modes determined by the preceding unipolar resistive switching reset behavior in Pt/TiO2/Pt 

    상세보기 crossref

  14. Appl Phys Lett Kim 101 243503 2012 10.1063/1.4770073 Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory 

    상세보기 crossref

  15. IEEE Electron Dev Lett Wang 32 1442 2011 10.1109/LED.2011.2162311 Flexible resistive switching memory device based on amorphous InGaZnO film with excellent mechanical endurance 

    상세보기 crossref

  16. Adv Mater Interf Samanta 4 2017 10.1002/admi.201700959 Effects of W/Ir top electrode on resistive switching and dopamine sensing by using optimized TaOx-based memory platform 

    상세보기 crossref

  17. Sci Rep Chakrabarti 7 4735 2017 10.1038/s41598-017-05059-9 Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism 

    상세보기 crossref

  18. J Alloy Compd Roy 726 30 2017 10.1016/j.jallcom.2017.07.304 Comparison of resistive switching characteristics by using e-gun/sputter deposited SiOx film in W/SiOx/TiN structure and pH/creatinine sensing through iridium electrode 

    상세보기 crossref

  19. Phys Rev B Rozenberg 81 115101 2010 10.1103/PhysRevB.81.115101 Mechanism for bipolar resistive switching in transition-metal oxides 

    상세보기 crossref

  20. Adv Mater Waser 21 2632 2009 10.1002/adma.200900375 Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges 

    상세보기 crossref

  21. 10.1109/IEDM.2016.7838367 Gao B, Wu H, Kang J, Yu H, Qian H. Oxide-based analog synapse: Physical modeling, experimental characterization, and optimization. Electron devices meeting (IEDM), 2016 IEEE international. IEEE; 2016. p. 7.3.1-7.3.4. 

    crossref

  22. Nano Lett Jo 10 1297 2010 10.1021/nl904092h Nanoscale memristor device as synapse in neuromorphic systems 

    상세보기 crossref

  23. IEEE Electron Dev Lett Tran 33 1402 2012 10.1109/LED.2012.2210855 A Self-rectifying AlOy bipolar RRAM with sub-50-μA set/reset current for cross-bar architecture 

    상세보기 crossref

  24. J Appl Phys Chen 111 013702 2012 10.1063/1.3672811 Bipolar resistive switching with self-rectifying effects in Al/ZnO/Si structure 

    상세보기 crossref

  25. Nat Mater Szot 5 312 2006 10.1038/nmat1614 Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 

    상세보기 crossref

  26. Electrochem Solid-State Lett Yoon 14 E28 2011 10.1149/1.3605310 Quenching effects on the solution-processed In-Ga-Zn-O system 

    상세보기 crossref

  27. Nature Nomura 432 488 2004 10.1038/nature03090 Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors 

    상세보기 crossref

  28. J Appl Phys Lee 112 033713 2012 10.1063/1.4744983 Band alignment of InGaZnO4/Si interface by hard X-ray photoelectron spectroscopy 

    상세보기 crossref
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