참고문헌 (32)

1. IEEE Int Electron Dev Meet Gao 161 2016 Wearable sweat biosensors 

2. IEEE Int Electron Dev Meet Alharbi 157 2016 Advanced integrated sensor and layer transfer technologies for wearable bioelectronics 

3. IEEE Int Electron Dev Meet Takei 143 2016 High performance, flexible CMOS circuits and sensors toward wearable healthcare applications 

4. IEEE Electron Dev Lett Cantarella 36 8 781 2015 10.1109/LED.2015.2442271 Flexible In-Ga-Zn-O thin-film transistors on elastomeric substrate bent to 2.3% strain 

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5. Adv Electron Mater Knobelspies 2 10 1600273 2016 10.1002/aelm.201600273 Flexible a-IGZO phototransistor for instantaneous and cumulative UV-exposure monitoring for skin health 

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6. Nat Commun Yoon 7 11477 2016 10.1038/ncomms11477 Robust and stretchable indium gallium zinc oxide-based electronic textiles formed by cilia-assisted transfer printing 

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7. IEEE Int Electron Dev Meet Heremans 151 2016 Flexible metal-oxide thin film transistor circuits for RFID and health patches 

8. SID Symp Dig Tech Pap Li 42 2017 10.1002/sdtp.11578 Stretchable oxide TFTs for wearable electronics 

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9. Phys Rev B Noh 84 11 115205 2011 10.1103/PhysRevB.84.115205 Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors 

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10. J Appl Phys Noh 113 6 063712 2013 10.1063/1.4792229 Effect of hydrogen incorporation on the negative bias illumination stress instability in amorphous In-Ga-Zn-O thin-film-transistors 

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11. Sci Rep Lee 5 14902 2015 10.1038/srep14902 Oxygen defect-induced metastability in oxide semiconductors probed by gate pulse spectroscopy 

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12. Sci Rep Lee 5 13467 2015 10.1038/srep13467 Localized tail states and electron mobility in amorphous ZnON thin film transistors 

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13. Appl Phys Lett Ghaffarzadeh 97 14 143510 2010 10.1063/1.3496029 Persistent photoconductivity in Hf-In-Zn-O thin film transistors 

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14. Sci Rep Kim 3 1459 2013 10.1038/srep01459 Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors 

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15. Appl Phys Lett Trinh 100 14 143502 2012 10.1063/1.3699221 Operation mechanism of Schottky barrier nonvolatile memory with high conductivity InGaZnO active layer 

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16. ACS Appl Mater Interf. Jang 7 28 15570 2015 10.1021/acsami.5b04152 Study on the photoresponse of amorphous In-Ga-Zn-O and zinc oxynitride semiconductor devices by the extraction of sub-gap-state distribution and device simulation 

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17. Trans Electr Electron Mater Kim 15 6 315 2014 10.4313/TEEM.2014.15.6.315 A light-induced threshold voltage instability based on a negative-U center in a-IGZO TFTs with different oxygen flow rates 

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18. Rare Met Mater Eng Ling 45 8 1992 2016 10.1016/S1875-5372(16)30160-6 Effect of sputtering pressure on surface roughness, oxygen vacancy and electrical properties of a-IGZO thin films 

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19. Thin Solid Films Sahoo 605 129 2016 10.1016/j.tsf.2015.12.016 Effects of argon flow rate on electrical properties of amorphous indium gallium zinc oxide thin-film transistors 

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20. Surf Coat Technol Wu 303 209 2016 10.1016/j.surfcoat.2016.03.089 Influence of oxygen/argon reaction gas ratio on optical and electrical characteristics of amorphous IGZO thin films coated by HiPIMS process 

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21. IEEE Electron Dev Lett Bae 34 12 1524 2013 10.1109/LED.2013.2287511 Single-scan monochromatic photonic capacitance-voltage technique for extraction of subgap DOS over the bandgap in amorphous semiconductor TFTs 

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22. Appl Phys Lett Ryu 97 2 022108 2010 10.1063/1.3464964 O-vacancy as the origin of negative bias illumination stress 

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23. Appl Phys Lett Um 103 3 033501 2013 10.1063/1.4813747 Mechanism of positive bias stress-assisted recovery in amorphous-indium-gallium-zinc-oxide thin-film transistors from negative bias under illumination stress 

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24. Appl Phys Lett Oh 97 18 183502 2010 10.1063/1.3510471 Photon-accelerated negative bias instability involving subgap states creation in amorphous In-Ga-Zn-O thin film transistor 

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25. Phys Status Solidi Basic Res Nahm 249 6 1277 2012 10.1002/pssb.201147557 Instability of amorphous oxide semiconductors via carrier-mediated structural transition between disorder and peroxide state 

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26. IEEE Electron Dev Lett Kim 33 1 62 2012 10.1109/LED.2011.2173153 Impact of oxygen flow rate on the instability under positive bias stresses in DC-sputtered amorphous InGaZnO thin-film transistors 

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27. SID Symp Dig Tech Pap Kim 10 2012 Physical model and simulation platform for high-level instability-aware design of amorphous oxide semiconductor thin-film transistors 

28. Appl Phys Lett Chen 99 2 022104 2011 10.1063/1.3609873 Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor 

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29. Semicond Sci Technol Cho 24 1 015013 2008 10.1088/0268-1242/24/1/015013 Charge trapping and detrapping characteristics in amorphous InGaZnO TFTs under static and dynamic stresses 

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30. Appl Phys Lett Chen 97 11 112104 2010 10.1063/1.3481676 Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress 

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31. Appl Phys Lett Yang 96 21 213511 2010 10.1063/1.3432445 Improvement in the photon-induced bias stability of Al-Sn-Zn-In-O thin film transistors by adopting AlOx passivation layer 

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32. Li 2005 CCD image sensors in deep-ultraviolet 

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