최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기電子工學會論文誌. Journal of the Institute of Electronics Engineers of Korea. SD, 반도체, v.38 no.1 = no.283, 2001년, pp.23 - 29
이재성 (위덕대학교 정보통신공학과) , 이재곤 (현대전자산업주식회사)
The effects of Ti-silicide process on the electrical properties of an analog polysilicon capacitor were investigated. To improve the linearity with the applied voltage both electrodes, which are polysilicon in our device, should have almost same material properties. The doping concentrations of both...
James L. McCreary, 'Matching properties, and voltage and temperature dependence of MOS capacitors', IEEE J. Solid State Circuits, vol. sc-16, pp.608-616, Dec. 1981
Rajinder S. and AB. Bhattacharyya, 'Matching properties of linear MOS capacitors', Solid-State Electronics, vol.32, no.4, pp.299-306, 1989
H.S. Chen, P. Tantasood, H.Y. Chen, GS. Yeh, and C.S. Teng, 'Modeling voltage coefficient of linear MOS capacitor', IEEE Trans. Electron Devices, vol. Ed-40, no.l, pp.220-222, 1993
C.Y. Ting, 'Silicide for contacts and interconnects,' IEDM Tech, Dig., pp.110-113, 1984
H. S. Chen and S.S.Li, 'Determination of generation lifetime and interface state density using a pulsed silicon-insulator-silicon capacitor,' SolidState Electron., vol. 35, p.371, 1992
E. Nicollian and J.R. Brews, MOS Physics and Technology, New York: Wiely, 1982
J. Hui, S. Wong, and J. Moll, 'Specific contact resistivity of $TiSi_2$ to $p^+$ and $n^+$ junctions,' IEEE Electron Device Lett, vol.6, no.9, pp. 479-481, 1985
Y. Taur, J. Tuan-Shen Sun, D. Moy, L. K Wang, B. Davari, S. P. Klepner, and C. Ting, 'Source-drain contact resistance in CMOS with self-aligned $TiSi_2$ ,' IEEE Trans. Electron Device, vol.34, no.3, pp.575-579, 1987
※ AI-Helper는 부적절한 답변을 할 수 있습니다.