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NTIS 바로가기電子工學會論文誌. Journal of the Institute of Electronics Engineers of Korea. SD, 반도체, v.41 no.4 = no.322, 2004년, pp.23 - 28
노영진 (한국항공대학교 전자·정보통신·컴퓨터공학부) , 이충근 (한국항공대학교 전자·정보통신·컴퓨터공학) , 홍신남 (한국항공대학교 전자·정보통신·컴퓨터공학부)
In this paper, the properties of Mo as PMOS gate electrodes were studied. The work-function of Mo extracted from C-V characteristic curves was appropriate for PMOS. To identify the electrical and chemical stability of Mo metal gate, the changes of work-function and EOT(Effective Oxide Thickness) val...
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